KR101673890B1 - 현상가능한 하층 반사방지 피막 - Google Patents

현상가능한 하층 반사방지 피막 Download PDF

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Publication number
KR101673890B1
KR101673890B1 KR1020157010837A KR20157010837A KR101673890B1 KR 101673890 B1 KR101673890 B1 KR 101673890B1 KR 1020157010837 A KR1020157010837 A KR 1020157010837A KR 20157010837 A KR20157010837 A KR 20157010837A KR 101673890 B1 KR101673890 B1 KR 101673890B1
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vinyloxy
bis
atom
crosslinking agent
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KR20150061654A (ko
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시게마사 나카스기
신지 미야자키
무니라트나 파드마나반
디. 알베르토 디오시스
Original Assignee
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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Assigned to 에이제트 일렉트로닉 머터리얼스 게엠베하 reassignment 에이제트 일렉트로닉 머터리얼스 게엠베하 권리의 전부이전등록 Assignors: 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제트 일렉트로닉 머터리얼스 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30—Only oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/38—Sulfur atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020157010837A 2012-09-26 2013-09-26 현상가능한 하층 반사방지 피막 Active KR101673890B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/627,599 2012-09-26
US13/627,599 US8900797B2 (en) 2012-09-26 2012-09-26 Developable bottom anti-reflective coating
PCT/IB2013/002121 WO2014049420A2 (en) 2012-09-26 2013-09-26 Developable bottom anti-reflective coating

Publications (2)

Publication Number Publication Date
KR20150061654A KR20150061654A (ko) 2015-06-04
KR101673890B1 true KR101673890B1 (ko) 2016-11-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157010837A Active KR101673890B1 (ko) 2012-09-26 2013-09-26 현상가능한 하층 반사방지 피막

Country Status (6)

Country Link
US (1) US8900797B2 (https=)
EP (1) EP2895468B1 (https=)
JP (1) JP6005866B2 (https=)
KR (1) KR101673890B1 (https=)
CN (1) CN104736523B (https=)
WO (1) WO2014049420A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180021021A (ko) * 2018-02-09 2018-02-28 에스엠에스주식회사 고굴절 아크릴 모노머 및 이를 이용한 광경화 조성물
KR20190140614A (ko) 2018-06-12 2019-12-20 주식회사 엘지화학 코팅 조성물 및 이를 이용한 마이크로 전자 소자 제조용 포지티브형 패턴의 제조방법
KR20200041287A (ko) 2018-10-11 2020-04-21 주식회사 엘지화학 화합물, 이를 포함하는 포토레지스트 조성물, 이를 포함하는 포토레지스트 패턴 및 포토레지스트 패턴의 제조 방법
KR20200041283A (ko) 2018-10-11 2020-04-21 주식회사 엘지화학 화합물, 이를 포함하는 포토레지스트 조성물, 이를 포함하는 포토레지스트 패턴 및 포토레지스트 패턴의 제조 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102214895B1 (ko) * 2017-12-26 2021-02-09 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
JP2020132749A (ja) * 2019-02-19 2020-08-31 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポリマー、ポリマーを含んでなる半導体組成物、および半導体組成物を用いた膜の製造方法
US11269252B2 (en) * 2019-07-22 2022-03-08 Rohm And Haas Electronic Materials Llc Method for forming pattern using antireflective coating composition including photoacid generator
US11940730B2 (en) 2020-12-31 2024-03-26 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods
CN115873176B (zh) * 2021-09-28 2023-09-26 上海新阳半导体材料股份有限公司 一种duv光刻用底部抗反射涂层及其制备方法和应用
CN116102680B (zh) * 2021-11-09 2024-02-13 上海新阳半导体材料股份有限公司 一种底部抗反射涂层及其制备方法和应用
US12512430B2 (en) 2022-06-28 2025-12-30 Dupont Electronic Materials International, Llc Metallization method
US12411412B2 (en) 2022-11-22 2025-09-09 Toyko Electron Limited Patterning semiconductor features
CN120605812B (zh) * 2025-08-12 2025-10-17 湖南明珠选矿药剂有限责任公司 一种金属矿浮选捕收剂及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
WO2005108510A1 (en) 2004-05-07 2005-11-17 Canon Kabushiki Kaisha Recording method, set of ink compositions applicable to recording method and image-forming apparatus
US20100119972A1 (en) 2008-11-12 2010-05-13 Francis Houlihan Coating composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3165514A (en) * 1962-08-07 1965-01-12 Dal Mon Research Co Unsaturated triazine compounds
US6156479A (en) 1997-09-30 2000-12-05 Brewer Science, Inc. Thermosetting anti-refective coatings
JP3907165B2 (ja) * 2001-11-05 2007-04-18 富士フイルム株式会社 ポジ型レジスト組成物
US8088548B2 (en) 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
WO2005108510A1 (en) 2004-05-07 2005-11-17 Canon Kabushiki Kaisha Recording method, set of ink compositions applicable to recording method and image-forming apparatus
US20100119972A1 (en) 2008-11-12 2010-05-13 Francis Houlihan Coating composition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180021021A (ko) * 2018-02-09 2018-02-28 에스엠에스주식회사 고굴절 아크릴 모노머 및 이를 이용한 광경화 조성물
KR102117555B1 (ko) 2018-02-09 2020-06-01 에스엠에스주식회사 고굴절 아크릴 모노머 및 이를 이용한 광경화 조성물
KR20190140614A (ko) 2018-06-12 2019-12-20 주식회사 엘지화학 코팅 조성물 및 이를 이용한 마이크로 전자 소자 제조용 포지티브형 패턴의 제조방법
KR20200041287A (ko) 2018-10-11 2020-04-21 주식회사 엘지화학 화합물, 이를 포함하는 포토레지스트 조성물, 이를 포함하는 포토레지스트 패턴 및 포토레지스트 패턴의 제조 방법
KR20200041283A (ko) 2018-10-11 2020-04-21 주식회사 엘지화학 화합물, 이를 포함하는 포토레지스트 조성물, 이를 포함하는 포토레지스트 패턴 및 포토레지스트 패턴의 제조 방법
US11680040B2 (en) 2018-10-11 2023-06-20 Lg Chem, Ltd. Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern
US11834419B2 (en) 2018-10-11 2023-12-05 Lg Chem, Ltd. Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern

Also Published As

Publication number Publication date
US20140087311A1 (en) 2014-03-27
WO2014049420A3 (en) 2014-05-30
EP2895468A2 (en) 2015-07-22
JP6005866B2 (ja) 2016-10-12
CN104736523A (zh) 2015-06-24
CN104736523B (zh) 2017-01-18
US8900797B2 (en) 2014-12-02
KR20150061654A (ko) 2015-06-04
WO2014049420A2 (en) 2014-04-03
EP2895468B1 (en) 2017-10-25
JP2015532313A (ja) 2015-11-09

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