KR101645770B1 - 저온 폴리실리콘막의 형성 장치 및 방법 - Google Patents

저온 폴리실리콘막의 형성 장치 및 방법 Download PDF

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KR101645770B1
KR101645770B1 KR1020127014465A KR20127014465A KR101645770B1 KR 101645770 B1 KR101645770 B1 KR 101645770B1 KR 1020127014465 A KR1020127014465 A KR 1020127014465A KR 20127014465 A KR20127014465 A KR 20127014465A KR 101645770 B1 KR101645770 B1 KR 101645770B1
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laser light
region
mask
polysilicon film
microlens
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Korean (ko)
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KR20120109496A (ko
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고이찌 가지야마
구니유끼 하마노
미찌노부 미즈무라
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브이 테크놀로지 씨오. 엘티디
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H10P14/3812—Shape of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020127014465A 2009-11-05 2010-10-14 저온 폴리실리콘막의 형성 장치 및 방법 Expired - Fee Related KR101645770B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-254216 2009-11-05
JP2009254216A JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法

Publications (2)

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KR20120109496A KR20120109496A (ko) 2012-10-08
KR101645770B1 true KR101645770B1 (ko) 2016-08-12

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US (1) US8748326B2 (enExample)
JP (1) JP5534402B2 (enExample)
KR (1) KR101645770B1 (enExample)
CN (1) CN102714149B (enExample)
TW (1) TWI512833B (enExample)
WO (1) WO2011055618A1 (enExample)

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CN102738079B (zh) * 2012-05-31 2015-01-07 昆山工研院新型平板显示技术中心有限公司 多晶硅激光退火装置及其方法
US8785815B2 (en) * 2012-06-22 2014-07-22 Applied Materials, Inc. Aperture control of thermal processing radiation
DE102012110165A1 (de) * 2012-10-24 2014-02-13 Jenoptik Automatisierungstechnik Gmbh Vorrichtung zum Verbinden zweier Werkstückteile mit Bereichen unterschiedlicher Eigenschaften mittels Durchstrahlschweißen
US9640423B2 (en) * 2015-07-30 2017-05-02 GlobalFoundries, Inc. Integrated circuits and methods for their fabrication
KR102467402B1 (ko) * 2015-12-15 2022-11-15 삼성디스플레이 주식회사 실리콘 결정화 방법 및 박막 트랜지스터 기판의 제조방법
JP6781872B2 (ja) * 2016-07-20 2020-11-11 株式会社ブイ・テクノロジー レーザ照射装置および薄膜トランジスタの製造方法
WO2018061126A1 (ja) * 2016-09-28 2018-04-05 堺ディスプレイプロダクト株式会社 レーザーアニール装置及びレーザーアニール方法
CN109964304A (zh) 2016-11-16 2019-07-02 V科技股份有限公司 激光照射装置、薄膜晶体管以及薄膜晶体管的制造方法
JP2018137302A (ja) * 2017-02-21 2018-08-30 株式会社ブイ・テクノロジー レーザ照射装置、薄膜トランジスタの製造方法およびプログラム
CN110870077A (zh) 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
US11081507B2 (en) 2017-07-12 2021-08-03 Sakai Display Products Corporation Semiconductor device and method for manufacturing same
CN107482066B (zh) * 2017-09-20 2021-01-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
JP2019062079A (ja) * 2017-09-26 2019-04-18 株式会社ブイ・テクノロジー レーザ照射装置、レーザ照射方法及び投影マスク
JP2020004859A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004860A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same
CN109742042B (zh) * 2019-01-10 2020-07-31 京东方科技集团股份有限公司 低温多晶硅的激光退火装置和退火方法
US11309427B2 (en) * 2019-03-04 2022-04-19 Boe Technology Group Co., Ltd. Thin film transistor and method for manufacturing a thin film transistor
EP3761344A1 (en) * 2019-07-05 2021-01-06 Laser Systems & Solutions of Europe System and method for spatially controlling an amount of energy delivered to a processed surface of a substrate
JP7495043B2 (ja) * 2020-01-10 2024-06-04 株式会社ブイ・テクノロジー 多結晶膜の形成方法およびレーザ結晶化装置

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TW201123312A (en) 2011-07-01
TWI512833B (zh) 2015-12-11
JP2011100838A (ja) 2011-05-19
JP5534402B2 (ja) 2014-07-02
US20120220140A1 (en) 2012-08-30
KR20120109496A (ko) 2012-10-08
WO2011055618A1 (ja) 2011-05-12
CN102714149A (zh) 2012-10-03
CN102714149B (zh) 2015-07-29
US8748326B2 (en) 2014-06-10

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