CN102714149B - 用于形成低温多晶硅膜的装置和方法 - Google Patents

用于形成低温多晶硅膜的装置和方法 Download PDF

Info

Publication number
CN102714149B
CN102714149B CN201080050013.XA CN201080050013A CN102714149B CN 102714149 B CN102714149 B CN 102714149B CN 201080050013 A CN201080050013 A CN 201080050013A CN 102714149 B CN102714149 B CN 102714149B
Authority
CN
China
Prior art keywords
laser light
light
mask
blocking
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080050013.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102714149A (zh
Inventor
梶山康一
滨野邦幸
水村通伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of CN102714149A publication Critical patent/CN102714149A/zh
Application granted granted Critical
Publication of CN102714149B publication Critical patent/CN102714149B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN201080050013.XA 2009-11-05 2010-10-14 用于形成低温多晶硅膜的装置和方法 Expired - Fee Related CN102714149B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-254216 2009-11-05
JP2009254216A JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法
PCT/JP2010/068005 WO2011055618A1 (ja) 2009-11-05 2010-10-14 低温ポリシリコン膜の形成装置及び方法

Publications (2)

Publication Number Publication Date
CN102714149A CN102714149A (zh) 2012-10-03
CN102714149B true CN102714149B (zh) 2015-07-29

Family

ID=43969858

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080050013.XA Expired - Fee Related CN102714149B (zh) 2009-11-05 2010-10-14 用于形成低温多晶硅膜的装置和方法

Country Status (6)

Country Link
US (1) US8748326B2 (enExample)
JP (1) JP5534402B2 (enExample)
KR (1) KR101645770B1 (enExample)
CN (1) CN102714149B (enExample)
TW (1) TWI512833B (enExample)
WO (1) WO2011055618A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5884147B2 (ja) * 2010-12-09 2016-03-15 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
CN102738079B (zh) * 2012-05-31 2015-01-07 昆山工研院新型平板显示技术中心有限公司 多晶硅激光退火装置及其方法
US8785815B2 (en) * 2012-06-22 2014-07-22 Applied Materials, Inc. Aperture control of thermal processing radiation
DE102012110165A1 (de) * 2012-10-24 2014-02-13 Jenoptik Automatisierungstechnik Gmbh Vorrichtung zum Verbinden zweier Werkstückteile mit Bereichen unterschiedlicher Eigenschaften mittels Durchstrahlschweißen
US9640423B2 (en) * 2015-07-30 2017-05-02 GlobalFoundries, Inc. Integrated circuits and methods for their fabrication
KR102467402B1 (ko) * 2015-12-15 2022-11-15 삼성디스플레이 주식회사 실리콘 결정화 방법 및 박막 트랜지스터 기판의 제조방법
JP6781872B2 (ja) * 2016-07-20 2020-11-11 株式会社ブイ・テクノロジー レーザ照射装置および薄膜トランジスタの製造方法
WO2018061126A1 (ja) * 2016-09-28 2018-04-05 堺ディスプレイプロダクト株式会社 レーザーアニール装置及びレーザーアニール方法
JP6761479B2 (ja) * 2016-11-16 2020-09-23 株式会社ブイ・テクノロジー レーザ照射装置、薄膜トランジスタおよび薄膜トランジスタの製造方法
JP2018137302A (ja) * 2017-02-21 2018-08-30 株式会社ブイ・テクノロジー レーザ照射装置、薄膜トランジスタの製造方法およびプログラム
US11121262B2 (en) 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same
WO2019012630A1 (ja) 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法
CN107482066B (zh) * 2017-09-20 2021-01-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
JP2019062079A (ja) * 2017-09-26 2019-04-18 株式会社ブイ・テクノロジー レーザ照射装置、レーザ照射方法及び投影マスク
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004860A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same
CN109742042B (zh) * 2019-01-10 2020-07-31 京东方科技集团股份有限公司 低温多晶硅的激光退火装置和退火方法
US11309427B2 (en) * 2019-03-04 2022-04-19 Boe Technology Group Co., Ltd. Thin film transistor and method for manufacturing a thin film transistor
EP3761344A1 (en) * 2019-07-05 2021-01-06 Laser Systems & Solutions of Europe System and method for spatially controlling an amount of energy delivered to a processed surface of a substrate
JP7495043B2 (ja) 2020-01-10 2024-06-04 株式会社ブイ・テクノロジー 多結晶膜の形成方法およびレーザ結晶化装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050139788A1 (en) * 2003-12-29 2005-06-30 You Jaesung Laser mask and crystallization method using the same
CN1677618A (zh) * 2004-03-31 2005-10-05 日本电气株式会社 半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管
JP2008131024A (ja) * 2006-11-27 2008-06-05 Canon Inc 近接場露光によるレジストパターンの形成方法
JP2008521247A (ja) * 2004-11-18 2008-06-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 結晶方位制御ポリシリコン膜を生成するためのシステム及び方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563196A (ja) 1991-09-04 1993-03-12 Hitachi Ltd 薄膜半導体装置及びその製造方法並び液晶表示装置
JP2003109911A (ja) * 2001-10-01 2003-04-11 Sharp Corp 薄膜処理装置、薄膜処理方法および薄膜デバイス
JP2003203874A (ja) * 2002-01-10 2003-07-18 Sharp Corp レーザ照射装置
US7329611B2 (en) * 2002-04-11 2008-02-12 Nec Corporation Method for forming finely-structured parts, finely-structured parts formed thereby, and product using such finely-structured part
KR101118974B1 (ko) * 2002-08-19 2012-03-15 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일성을 제공하도록 기판 상의 박막 영역을 레이저 결정화처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조
KR100920343B1 (ko) * 2003-01-08 2009-10-07 삼성전자주식회사 다결정 규소 박막 트랜지스터 표시판 및 그 제조 방법
KR100675936B1 (ko) * 2004-08-06 2007-02-02 비오이 하이디스 테크놀로지 주식회사 단결정실리콘막 형성방법
JP2006237270A (ja) * 2005-02-24 2006-09-07 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
JP4589788B2 (ja) * 2005-04-04 2010-12-01 住友重機械工業株式会社 レーザ照射方法
KR101167662B1 (ko) 2005-08-04 2012-07-23 삼성전자주식회사 순차 측면 고상화용 마스크 및 이의 제조 방법
KR100742380B1 (ko) * 2005-12-28 2007-07-24 삼성에스디아이 주식회사 마스크 패턴, 박막 트랜지스터의 제조 방법 및 이를사용하는 유기 전계 발광 표시 장치의 제조 방법
JP2008147429A (ja) * 2006-12-11 2008-06-26 Sumitomo Heavy Ind Ltd レーザアニール装置及びレーザアニール方法
JP2009032952A (ja) * 2007-07-27 2009-02-12 Sharp Corp レーザ照射装置、レーザ照射方法、結晶材料、および、機能素子
KR101073551B1 (ko) * 2009-11-16 2011-10-17 삼성모바일디스플레이주식회사 레이저 마스크 및 이를 이용한 순차적 측면 고상 결정화 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050139788A1 (en) * 2003-12-29 2005-06-30 You Jaesung Laser mask and crystallization method using the same
CN1677618A (zh) * 2004-03-31 2005-10-05 日本电气株式会社 半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管
JP2008521247A (ja) * 2004-11-18 2008-06-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 結晶方位制御ポリシリコン膜を生成するためのシステム及び方法
JP2008131024A (ja) * 2006-11-27 2008-06-05 Canon Inc 近接場露光によるレジストパターンの形成方法

Also Published As

Publication number Publication date
US20120220140A1 (en) 2012-08-30
TWI512833B (zh) 2015-12-11
KR20120109496A (ko) 2012-10-08
JP2011100838A (ja) 2011-05-19
JP5534402B2 (ja) 2014-07-02
TW201123312A (en) 2011-07-01
CN102714149A (zh) 2012-10-03
WO2011055618A1 (ja) 2011-05-12
KR101645770B1 (ko) 2016-08-12
US8748326B2 (en) 2014-06-10

Similar Documents

Publication Publication Date Title
CN102714149B (zh) 用于形成低温多晶硅膜的装置和方法
KR100971951B1 (ko) 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
WO2011158612A1 (ja) 低温ポリシリコン膜の形成装置及び方法
JP2002237455A (ja) シリコン結晶化装置とシリコン結晶化方法
JPH08236443A (ja) 半導体結晶の成長方法および半導体製造装置
WO2011132559A1 (ja) レーザアニール方法、装置及びマイクロレンズアレイ
KR20050057166A (ko) 레이저 가공 방법 및 레이저 가공 장치
US20040060506A1 (en) Excimer laser crystallization of amorphous silicon film
JP2008227077A (ja) レーザ光のマスク構造、レーザ加工方法、ｔｆｔ素子およびレーザ加工装置
JP6221088B2 (ja) レーザアニール装置及びレーザアニール方法
WO2004064133A1 (ja) 結晶化半導体薄膜の製造方法ならびにその製造装置
TW202034388A (zh) 雷射退火方法及雷射退火裝置
JP2005276944A (ja) 半導体デバイス、その製造方法および製造装置
JP4763983B2 (ja) 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法、表示装置及び位相シフタ
WO2006075568A1 (ja) 多結晶半導体薄膜の製造方法および製造装置
JP2007281465A (ja) 多結晶膜の形成方法
KR100575235B1 (ko) 레이저 광학계 및 이를 이용한 결정화 방법
JP4467276B2 (ja) 半導体薄膜を製造する方法と装置
JP2005347380A (ja) 半導体薄膜の製造方法および製造装置
JP2007207896A (ja) レーザビーム投影マスクおよびそれを用いたレーザ加工方法、レーザ加工装置
JP2011139082A (ja) 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法および表示装置
US7649206B2 (en) Sequential lateral solidification mask
JP2014060184A (ja) 低温ポリシリコン膜の形成方法及び薄膜トランジスタの製造方法
KR20050121548A (ko) 실리콘 결정화 방법과 이를 이용한 박막트랜지스터 기판의제조방법
JP2008147236A (ja) 結晶化装置およびレーザ加工方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150729

Termination date: 20211014