JP5534402B2 - 低温ポリシリコン膜の形成装置及び方法 - Google Patents

低温ポリシリコン膜の形成装置及び方法 Download PDF

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JP5534402B2
JP5534402B2 JP2009254216A JP2009254216A JP5534402B2 JP 5534402 B2 JP5534402 B2 JP 5534402B2 JP 2009254216 A JP2009254216 A JP 2009254216A JP 2009254216 A JP2009254216 A JP 2009254216A JP 5534402 B2 JP5534402 B2 JP 5534402B2
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laser light
region
mask
microlens
irradiation
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JP2011100838A5 (enExample
JP2011100838A (ja
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康一 梶山
邦幸 濱野
通伸 水村
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V Technology Co Ltd
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V Technology Co Ltd
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Priority to JP2009254216A priority Critical patent/JP5534402B2/ja
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Priority to KR1020127014465A priority patent/KR101645770B1/ko
Priority to CN201080050013.XA priority patent/CN102714149B/zh
Priority to US13/505,721 priority patent/US8748326B2/en
Priority to PCT/JP2010/068005 priority patent/WO2011055618A1/ja
Priority to TW099137462A priority patent/TWI512833B/zh
Publication of JP2011100838A publication Critical patent/JP2011100838A/ja
Publication of JP2011100838A5 publication Critical patent/JP2011100838A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2009254216A 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法 Expired - Fee Related JP5534402B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009254216A JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法
CN201080050013.XA CN102714149B (zh) 2009-11-05 2010-10-14 用于形成低温多晶硅膜的装置和方法
US13/505,721 US8748326B2 (en) 2009-11-05 2010-10-14 Device and method for forming low-temperature polysilicon film
PCT/JP2010/068005 WO2011055618A1 (ja) 2009-11-05 2010-10-14 低温ポリシリコン膜の形成装置及び方法
KR1020127014465A KR101645770B1 (ko) 2009-11-05 2010-10-14 저온 폴리실리콘막의 형성 장치 및 방법
TW099137462A TWI512833B (zh) 2009-11-05 2010-11-01 低溫多晶矽膜之形成裝置及方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009254216A JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法

Publications (3)

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JP2011100838A JP2011100838A (ja) 2011-05-19
JP2011100838A5 JP2011100838A5 (enExample) 2012-11-01
JP5534402B2 true JP5534402B2 (ja) 2014-07-02

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US (1) US8748326B2 (enExample)
JP (1) JP5534402B2 (enExample)
KR (1) KR101645770B1 (enExample)
CN (1) CN102714149B (enExample)
TW (1) TWI512833B (enExample)
WO (1) WO2011055618A1 (enExample)

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WO2021140849A1 (ja) * 2020-01-10 2021-07-15 株式会社ブイ・テクノロジー 多結晶膜、多結晶膜の形成方法、レーザ結晶化装置、および半導体装置

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CN102738079B (zh) * 2012-05-31 2015-01-07 昆山工研院新型平板显示技术中心有限公司 多晶硅激光退火装置及其方法
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US9640423B2 (en) * 2015-07-30 2017-05-02 GlobalFoundries, Inc. Integrated circuits and methods for their fabrication
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JP6781872B2 (ja) * 2016-07-20 2020-11-11 株式会社ブイ・テクノロジー レーザ照射装置および薄膜トランジスタの製造方法
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JP2018137302A (ja) * 2017-02-21 2018-08-30 株式会社ブイ・テクノロジー レーザ照射装置、薄膜トランジスタの製造方法およびプログラム
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JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004860A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
WO2020031309A1 (ja) 2018-08-08 2020-02-13 堺ディスプレイプロダクト株式会社 薄膜トランジスタおよびその製造方法
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WO2021140849A1 (ja) * 2020-01-10 2021-07-15 株式会社ブイ・テクノロジー 多結晶膜、多結晶膜の形成方法、レーザ結晶化装置、および半導体装置
KR20220124681A (ko) 2020-01-10 2022-09-14 브이 테크놀로지 씨오. 엘티디 다결정 막, 다결정 막의 형성 방법, 레이저 결정화 장치 및 반도체 장치
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JP7495043B2 (ja) 2020-01-10 2024-06-04 株式会社ブイ・テクノロジー 多結晶膜の形成方法およびレーザ結晶化装置

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Publication number Publication date
KR20120109496A (ko) 2012-10-08
WO2011055618A1 (ja) 2011-05-12
CN102714149B (zh) 2015-07-29
TWI512833B (zh) 2015-12-11
CN102714149A (zh) 2012-10-03
US20120220140A1 (en) 2012-08-30
JP2011100838A (ja) 2011-05-19
KR101645770B1 (ko) 2016-08-12
TW201123312A (en) 2011-07-01
US8748326B2 (en) 2014-06-10

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