JP5534402B2 - 低温ポリシリコン膜の形成装置及び方法 - Google Patents

低温ポリシリコン膜の形成装置及び方法 Download PDF

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Publication number
JP5534402B2
JP5534402B2 JP2009254216A JP2009254216A JP5534402B2 JP 5534402 B2 JP5534402 B2 JP 5534402B2 JP 2009254216 A JP2009254216 A JP 2009254216A JP 2009254216 A JP2009254216 A JP 2009254216A JP 5534402 B2 JP5534402 B2 JP 5534402B2
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laser light
region
mask
microlens
irradiation
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Expired - Fee Related
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JP2009254216A
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Japanese (ja)
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JP2011100838A (ja
JP2011100838A5 (enExample
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康一 梶山
邦幸 濱野
通伸 水村
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V Technology Co Ltd
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V Technology Co Ltd
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Priority to JP2009254216A priority Critical patent/JP5534402B2/ja
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to PCT/JP2010/068005 priority patent/WO2011055618A1/ja
Priority to KR1020127014465A priority patent/KR101645770B1/ko
Priority to US13/505,721 priority patent/US8748326B2/en
Priority to CN201080050013.XA priority patent/CN102714149B/zh
Priority to TW099137462A priority patent/TWI512833B/zh
Publication of JP2011100838A publication Critical patent/JP2011100838A/ja
Publication of JP2011100838A5 publication Critical patent/JP2011100838A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H10P14/3812—Shape of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2009254216A 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法 Expired - Fee Related JP5534402B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009254216A JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法
KR1020127014465A KR101645770B1 (ko) 2009-11-05 2010-10-14 저온 폴리실리콘막의 형성 장치 및 방법
US13/505,721 US8748326B2 (en) 2009-11-05 2010-10-14 Device and method for forming low-temperature polysilicon film
CN201080050013.XA CN102714149B (zh) 2009-11-05 2010-10-14 用于形成低温多晶硅膜的装置和方法
PCT/JP2010/068005 WO2011055618A1 (ja) 2009-11-05 2010-10-14 低温ポリシリコン膜の形成装置及び方法
TW099137462A TWI512833B (zh) 2009-11-05 2010-11-01 低溫多晶矽膜之形成裝置及方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009254216A JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法

Publications (3)

Publication Number Publication Date
JP2011100838A JP2011100838A (ja) 2011-05-19
JP2011100838A5 JP2011100838A5 (enExample) 2012-11-01
JP5534402B2 true JP5534402B2 (ja) 2014-07-02

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JP2009254216A Expired - Fee Related JP5534402B2 (ja) 2009-11-05 2009-11-05 低温ポリシリコン膜の形成装置及び方法

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Country Link
US (1) US8748326B2 (enExample)
JP (1) JP5534402B2 (enExample)
KR (1) KR101645770B1 (enExample)
CN (1) CN102714149B (enExample)
TW (1) TWI512833B (enExample)
WO (1) WO2011055618A1 (enExample)

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WO2021140849A1 (ja) * 2020-01-10 2021-07-15 株式会社ブイ・テクノロジー 多結晶膜、多結晶膜の形成方法、レーザ結晶化装置、および半導体装置

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Also Published As

Publication number Publication date
TW201123312A (en) 2011-07-01
TWI512833B (zh) 2015-12-11
JP2011100838A (ja) 2011-05-19
US20120220140A1 (en) 2012-08-30
KR20120109496A (ko) 2012-10-08
WO2011055618A1 (ja) 2011-05-12
CN102714149A (zh) 2012-10-03
KR101645770B1 (ko) 2016-08-12
CN102714149B (zh) 2015-07-29
US8748326B2 (en) 2014-06-10

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