JP2008521247A - 結晶方位制御ポリシリコン膜を生成するためのシステム及び方法 - Google Patents
結晶方位制御ポリシリコン膜を生成するためのシステム及び方法 Download PDFInfo
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Abstract
【選択図】図8B
Description
Claims (26)
- 基板上で膜を処理する方法であって、
主に一方向の結晶方位を有する結晶粒子を含む配向膜を提供する段階と、
前記結晶方位に向けられた前記結晶粒子の位置制御成長を可能にする順次横方向固化結晶化を用いて微小構造体を生成する段階と、
を含む方法。 - 前記順次横方向固化結晶化が、
複数のレーザビームパルスを生成する段階と、
前記複数のレーザビームパルスをマスクを通して誘導し、複数のパターン形成されたレーザビームを生成する段階と、
前記複数のパターン形成されたビームのうちの1つで膜の一部分を照射する段階であって、前記ビームは前記膜の照射部分の全厚を通って溶融するのに十分な強度を有し、前記膜の照射部分は冷却時に横方向に結晶化する段階と、
前記膜の後続の部分が前に照射された部分と重なり合い、前記結晶粒子の更なる横方向成長が可能になるように、前記膜を再配置して、パターン形成されたビームで前記後続部分を照射する段階と、
を含むことを特徴とする請求項1に記載の方法。 - 前記順次横方向固化結晶化が、
複数のレーザビームパルスを生成する段階と、
前記複数のレーザビームパルスをマスクを通して誘導し、複数のパターン形成されたレーザビームを生成する段階と、
前記複数のパターン形成されたビームのうちの1つで膜の選択領域の一部分を照射する段階であって、前記ビームは前記膜の照射部分を溶融するのに十分な強度を有し、前記膜の照射部分は冷却時に結晶化する段階と、
前記膜の選択領域にわたる前記パターン形成されたビームの1回の横断で前記膜の選択領域が実質的に完全に結晶化されるように、前記選択領域の連続部分がパターン形成されたビームで照射されている間に前記膜を第1の並進経路に沿って移動させ、前記マスクを第2の並進経路に沿って移動させる段階と、
を含む請求項1に記載の方法。 - 前記マスクはドットパターンマスクを含む請求項2に記載の方法。
- 前記マスクは、ドット形状区域、六角形形状区域、及び矩形形状区域のうちの少なくとも1つを含む不透明な配列パターンを含むことを特徴とする請求項4に記載の方法。
- 前記配向膜は、ゾーン溶融再結晶化法、固相最結晶化法、直接堆積法、表面エネルギー駆動二次粒子成長法、及びパルスレーザ結晶化法のうちの1つによって生成されることを特徴とする請求項1に記載の方法。
- 前記直接堆積法は、化学蒸着、スパッタリング、及び蒸発のうちの1つを含むことを特徴とする請求項6に記載の方法。
- 前記パルスレーザ結晶化法は、順次横方向固化及び多パルスELAプロセスのうちの1つを含むことを特徴とする請求項6に記載の方法。
- 前記膜は半導体膜であることを特徴とする請求項1に記載の方法。
- 前記膜は金属膜であることを特徴とする請求項1に記載の方法。
- 前記一方向は、好ましくは前記膜の表面に対し法線方向であることを特徴とする請求項1に記載の方法。
- 主な結晶方位が<111>方位であることを特徴とする請求項1に記載の方法。
- 前記主な結晶方位が<100>方位であることを特徴とする請求項1に記載の方法。
- 基板上で膜を処理するためのシステムであって、
複数のレーザビームパルスを生成するための少なくとも1つのレーザと、
少なくとも一方向に移動することができる、前記膜を位置付けるための膜支持体と、
マスク支持体と、
レーザビームパルスの第1のセットを第1のマスクを通して誘導し、配向膜を生成するための光学要素と、
前記配向膜上にレーザビームパルスの第2のセットを第2のマスクを通して誘導するための光学要素と、
レーザビームパルスの前記第1のセット及び第2のセットの周波数に関連して前記膜支持体及びマスク支持体の移動を制御するためのコントローラと、
を備えるシステム。 - 前記配向膜は、ゾーン溶融再結晶化、固相再結晶化、直接堆積法、表面エネルギー駆動二次粒子成長法、及びパルスレーザ結晶化法のうちの1つによって生成されることを特徴とする請求項14に記載のシステム。
- 前記直接堆積法は、化学蒸着、スパッタリング、及び蒸発のうちの1つを含むことを特徴とする請求項14に記載のシステム。
- 前記パルスレーザ結晶化法は、順次横方向固化及び多パルスELAプロセスのうちの1つを含むことを特徴とする請求項14に記載のシステム。
- 前記膜は半導体膜であることを特徴とする請求項14に記載のシステム。
- 前記膜は金属膜であることを特徴とする請求項14に記載のシステム。
- 周期的に位置付けられた粒子を有し、該粒子の各々が主に1つの結晶方位のものである多結晶薄膜を含むデバイス。
- 前記膜は半導体膜であることを特徴とする請求項20に記載のデバイス。
- 前記膜は金属膜であることを特徴とする請求項20に記載のデバイス。
- 主な結晶方位が<111>方位であることを特徴とする請求項20に記載のデバイス。
- 主な結晶方位が<100>方位であることを特徴とする請求項20に記載のデバイス。
- 前記周期的に配置された粒子の微小構造体が、六角形パターン、円形パターン、矩形パターン、又は正方形パターンであることを特徴とする請求項20に記載のデバイス。
- 前記周期的に配置された粒子が細長い粒子の列を形成することを特徴とする請求項20に記載のデバイス。
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JP2011515833A (ja) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 薄膜のためのフラッシュ光アニーリング |
JP2016105492A (ja) * | 2009-11-30 | 2016-06-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体用途のための結晶化処理 |
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