JP5068171B2 - 結晶方位制御ポリシリコン膜を生成するためのシステム及び方法 - Google Patents
結晶方位制御ポリシリコン膜を生成するためのシステム及び方法 Download PDFInfo
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- C30—CRYSTAL GROWTH
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- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
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Description
Claims (9)
- 基板上で半導体膜を処理する方法であって、
前記半導体膜の表面の下方であって前記半導体と前記基板との間の界面において1方向の結晶方位を有する結晶粒子を含む配向半導体膜を提供する段階と、
前記結晶方位に向けられた前記結晶粒子の位置制御成長を可能にする順次横方向固化結晶化を用いて微小構造体を生成する段階と、
を含み、前記順次横方向固化結晶化が前記半導体と前記基板との間の界面において前記配向半導体膜の固相/溶融界面から横方向に再結晶化して結晶領域を形成するように構成されていることを特徴とする方法。 - 前記順次横方向固化結晶化が、
複数のレーザビームパルスを生成する段階と、
前記複数のレーザビームパルスをマスクを通して誘導し、複数のパターン形成されたレーザビームを生成する段階と、
前記複数のパターン形成されたビームのうちの1つで膜の一部分を照射する段階であって、前記ビームは前記半導体膜の照射部分の全厚を通って溶融するのに十分な強度を有し、前記半導体膜の照射部分は冷却時に横方向に結晶化する段階と、
前記半導体膜の後続の部分が前に照射された部分と重なり合い、前記結晶粒子の更なる横方向成長が可能になるように、前記半導体膜を再配置して、パターン形成されたビームで前記後続部分を照射する段階と、
を含むことを特徴とする請求項1に記載の方法。 - 前記順次横方向固化結晶化が、
複数のレーザビームパルスを生成する段階と、
前記複数のレーザビームパルスをマスクを通して誘導し、複数のパターン形成されたレーザビームを生成する段階と、
前記複数のパターン形成されたビームのうちの1つで前記半導体膜の選択領域の一部分を照射する段階であって、前記ビームは前記半導体膜の照射部分を溶融するのに十分な強度を有し、前記半導体膜の照射部分を冷却時に結晶化する段階と、
前記半導体膜の前記選択領域が完全に結晶化されるように、前記半導体膜の選択領域の連続した部分をパターン形成されたビームで照射しつつ、前記半導体膜を第1の並進経路に沿って移動させ、そして前記マスクを第2の並進経路に沿って移動させる段階と、
を含む請求項1に記載の方法。 - 前記マスクはドットパターンマスクを含む請求項2に記載の方法。
- 前記マスクは、ドット形状区域、六角形形状区域、及び矩形形状区域のうちの少なくとも1つを含む不透明な配列パターンを含むことを特徴とする請求項4に記載の方法。
- 前記配向半導体膜は、ゾーン溶融再結晶化法、固相最結晶化法、直接堆積法、表面エネルギー駆動二次粒子成長法、及びパルスレーザ結晶化法のうちの1つによって生成されることを特徴とする請求項1に記載の方法。
- 前記直接堆積法は、化学蒸着、スパッタリング、及び蒸着のうちの1つを含むことを特徴とする請求項6に記載の方法。
- 前記パルスレーザ結晶化法は、順次横方向固化及び多パルスELAプロセスのうちの1つを含むことを特徴とする請求項6に記載の方法。
- 前記一方向は、好ましくは前記半導体膜の表面に対し法線方向であることを特徴とする請求項1に記載の方法。
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PCT/US2004/039055 WO2006055003A1 (en) | 2004-11-18 | 2004-11-18 | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
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EP (1) | EP1812958A1 (ja) |
JP (1) | JP5068171B2 (ja) |
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US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
AU2003258289A1 (en) | 2002-08-19 | 2004-03-03 | The Trustees Of Columbia University In The City Of New York | A single-shot semiconductor processing system and method having various irradiation patterns |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
WO2005034193A2 (en) | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
CN101617069B (zh) | 2005-12-05 | 2012-05-23 | 纽约市哥伦比亚大学理事会 | 处理膜的系统和方法以及薄膜 |
TW200942935A (en) | 2007-09-21 | 2009-10-16 | Univ Columbia | Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same |
KR20100074179A (ko) | 2007-09-25 | 2010-07-01 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 측방향으로 결정화된 박막상에 제조된 박막 트랜지스터 장치에 높은 균일성을 생산하기 위한 방법 |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
CN103354204A (zh) | 2007-11-21 | 2013-10-16 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的系统和方法 |
JP5135002B2 (ja) * | 2008-02-28 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2009111340A2 (en) | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
CN101971293B (zh) * | 2008-02-29 | 2014-04-16 | 纽约市哥伦比亚大学理事会 | 用于薄膜的闪光灯退火 |
US20110175099A1 (en) * | 2008-02-29 | 2011-07-21 | The Trustees Of Columbia University In The City Of New York | Lithographic method of making uniform crystalline si films |
JP2012508985A (ja) | 2008-11-14 | 2012-04-12 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 薄膜の結晶化のためのシステムおよび方法 |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
JP5534402B2 (ja) * | 2009-11-05 | 2014-07-02 | 株式会社ブイ・テクノロジー | 低温ポリシリコン膜の形成装置及び方法 |
TWI528418B (zh) * | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
CN102181940B (zh) * | 2011-04-08 | 2012-07-18 | 光为绿色新能源股份有限公司 | 一种多晶硅绒面的制备方法 |
KR20210070417A (ko) | 2019-12-04 | 2021-06-15 | 삼성디스플레이 주식회사 | 표시 장치 |
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JPH07273030A (ja) * | 1994-03-28 | 1995-10-20 | Tokyo Electron Ltd | 基板上の非晶質膜の多結晶化方法及び液晶ディスプレイ基板の製造方法 |
KR100296110B1 (ko) * | 1998-06-09 | 2001-08-07 | 구본준, 론 위라하디락사 | 박막트랜지스터 제조방법 |
DE19839718A1 (de) * | 1998-09-01 | 2000-03-02 | Strunk Horst P | Kristallisation von Halbleiterschichten mit gepulster Laserstrahlung durch Belichtung mit einer Zweistrahlmethode |
KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
DE10103670A1 (de) * | 2001-01-27 | 2002-08-01 | Christiansen Jens I | Erzeugung kristalliner Si-Schichten mit (100)-Textur durch Laserbeschuß amorpher Si-Schichten auf einem Substrat |
US6573163B2 (en) * | 2001-01-29 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
US6635555B2 (en) * | 2001-02-28 | 2003-10-21 | Sharp Laboratories Of America, Inc. | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films |
JP2003124230A (ja) * | 2001-10-12 | 2003-04-25 | Hitachi Ltd | 薄膜トランジスタ装置、その製造方法及びこの装置を用いた画像表示装置 |
JP2002203809A (ja) * | 2001-10-25 | 2002-07-19 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3980466B2 (ja) * | 2001-11-09 | 2007-09-26 | 株式会社半導体エネルギー研究所 | レーザー装置及びレーザー照射方法 |
KR100618184B1 (ko) * | 2003-03-31 | 2006-08-31 | 비오이 하이디스 테크놀로지 주식회사 | 결정화 방법 |
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