KR101534117B1 - 고체 촬상 장치 및 카메라 - Google Patents

고체 촬상 장치 및 카메라 Download PDF

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Publication number
KR101534117B1
KR101534117B1 KR1020080127805A KR20080127805A KR101534117B1 KR 101534117 B1 KR101534117 B1 KR 101534117B1 KR 1020080127805 A KR1020080127805 A KR 1020080127805A KR 20080127805 A KR20080127805 A KR 20080127805A KR 101534117 B1 KR101534117 B1 KR 101534117B1
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pixel
transistor
well
substrate
drain
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KR20090066227A (ko
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이사오 히로타
고이치 하라다
노부히로 가라사와
야스시 마루야마
요시카즈 닛타
히로유키 데라카고
하지메 다카시마
히데오 노무라
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020080127805A 2007-12-18 2008-12-16 고체 촬상 장치 및 카메라 Expired - Fee Related KR101534117B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-326175 2007-12-18
JP2007326175A JP5167799B2 (ja) 2007-12-18 2007-12-18 固体撮像装置およびカメラ

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KR20090066227A KR20090066227A (ko) 2009-06-23
KR101534117B1 true KR101534117B1 (ko) 2015-07-06

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US (2) US8106983B2 (enExample)
EP (1) EP2073270B1 (enExample)
JP (1) JP5167799B2 (enExample)
KR (1) KR101534117B1 (enExample)
CN (2) CN101465364B (enExample)
TW (1) TWI416949B (enExample)

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TW200943938A (en) 2009-10-16
CN102184930A (zh) 2011-09-14
CN101465364A (zh) 2009-06-24
US20120113292A1 (en) 2012-05-10
KR20090066227A (ko) 2009-06-23
JP5167799B2 (ja) 2013-03-21
US8106983B2 (en) 2012-01-31
EP2073270A2 (en) 2009-06-24
CN101465364B (zh) 2011-06-08
CN102184930B (zh) 2014-02-26
TWI416949B (zh) 2013-11-21
US8687101B2 (en) 2014-04-01
EP2073270B1 (en) 2014-03-19
EP2073270A3 (en) 2012-05-16
JP2009152234A (ja) 2009-07-09
US20090153708A1 (en) 2009-06-18

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