TWI416949B - 固態成像裝置及照相機 - Google Patents

固態成像裝置及照相機 Download PDF

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Publication number
TWI416949B
TWI416949B TW097148776A TW97148776A TWI416949B TW I416949 B TWI416949 B TW I416949B TW 097148776 A TW097148776 A TW 097148776A TW 97148776 A TW97148776 A TW 97148776A TW I416949 B TWI416949 B TW I416949B
Authority
TW
Taiwan
Prior art keywords
imaging device
solid
state imaging
pixel
well
Prior art date
Application number
TW097148776A
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English (en)
Chinese (zh)
Other versions
TW200943938A (en
Inventor
Isao Hirota
Kouichi Harada
Nobuhiro Karasawa
Yasushi Maruyama
Yoshikazu Nitta
Hiroyuki Terakago
Hajime Takashima
Hideo Nomura
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200943938A publication Critical patent/TW200943938A/zh
Application granted granted Critical
Publication of TWI416949B publication Critical patent/TWI416949B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW097148776A 2007-12-18 2008-12-15 固態成像裝置及照相機 TWI416949B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007326175A JP5167799B2 (ja) 2007-12-18 2007-12-18 固体撮像装置およびカメラ

Publications (2)

Publication Number Publication Date
TW200943938A TW200943938A (en) 2009-10-16
TWI416949B true TWI416949B (zh) 2013-11-21

Family

ID=40429769

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097148776A TWI416949B (zh) 2007-12-18 2008-12-15 固態成像裝置及照相機

Country Status (6)

Country Link
US (2) US8106983B2 (enExample)
EP (1) EP2073270B1 (enExample)
JP (1) JP5167799B2 (enExample)
KR (1) KR101534117B1 (enExample)
CN (2) CN101465364B (enExample)
TW (1) TWI416949B (enExample)

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Also Published As

Publication number Publication date
KR101534117B1 (ko) 2015-07-06
TW200943938A (en) 2009-10-16
CN102184930A (zh) 2011-09-14
CN101465364A (zh) 2009-06-24
US20120113292A1 (en) 2012-05-10
KR20090066227A (ko) 2009-06-23
JP5167799B2 (ja) 2013-03-21
US8106983B2 (en) 2012-01-31
EP2073270A2 (en) 2009-06-24
CN101465364B (zh) 2011-06-08
CN102184930B (zh) 2014-02-26
US8687101B2 (en) 2014-04-01
EP2073270B1 (en) 2014-03-19
EP2073270A3 (en) 2012-05-16
JP2009152234A (ja) 2009-07-09
US20090153708A1 (en) 2009-06-18

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