KR101488545B1 - Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스 - Google Patents

Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스 Download PDF

Info

Publication number
KR101488545B1
KR101488545B1 KR1020097026018A KR20097026018A KR101488545B1 KR 101488545 B1 KR101488545 B1 KR 101488545B1 KR 1020097026018 A KR1020097026018 A KR 1020097026018A KR 20097026018 A KR20097026018 A KR 20097026018A KR 101488545 B1 KR101488545 B1 KR 101488545B1
Authority
KR
South Korea
Prior art keywords
plane
crystal
gan
nitride semiconductor
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097026018A
Other languages
English (en)
Korean (ko)
Other versions
KR20100017798A (ko
Inventor
겐지 후지토
가즈마사 기요미
Original Assignee
미쓰비시 가가꾸 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 가가꾸 가부시키가이샤 filed Critical 미쓰비시 가가꾸 가부시키가이샤
Publication of KR20100017798A publication Critical patent/KR20100017798A/ko
Application granted granted Critical
Publication of KR101488545B1 publication Critical patent/KR101488545B1/ko
Assigned to 미쯔비시 케미컬 주식회사 reassignment 미쯔비시 케미컬 주식회사 권리의 전부이전등록 Assignors: 미쓰비시 가가꾸 가부시키가이샤
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/274—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using seed materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Manufacturing & Machinery (AREA)
KR1020097026018A 2007-05-17 2008-05-16 Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스 Active KR101488545B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-131955 2007-05-17
JP2007131955 2007-05-17
PCT/JP2008/059018 WO2008143166A1 (ja) 2007-05-17 2008-05-16 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス

Publications (2)

Publication Number Publication Date
KR20100017798A KR20100017798A (ko) 2010-02-16
KR101488545B1 true KR101488545B1 (ko) 2015-02-02

Family

ID=40031868

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097026018A Active KR101488545B1 (ko) 2007-05-17 2008-05-16 Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스

Country Status (5)

Country Link
US (3) US8269251B2 (cg-RX-API-DMAC10.html)
EP (1) EP2154272A4 (cg-RX-API-DMAC10.html)
JP (4) JP2008308401A (cg-RX-API-DMAC10.html)
KR (1) KR101488545B1 (cg-RX-API-DMAC10.html)
WO (1) WO2008143166A1 (cg-RX-API-DMAC10.html)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
WO2009110436A1 (ja) 2008-03-03 2009-09-11 三菱化学株式会社 窒化物半導体結晶とその製造方法
JP5461859B2 (ja) * 2008-03-28 2014-04-02 Ｊｆｅミネラル株式会社 ＡｌＮバルク単結晶及び半導体デバイス並びにＡｌＮ単結晶バルクの製造方法
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
CN102067286B (zh) * 2009-03-06 2013-03-06 松下电器产业株式会社 氮化物半导体的晶体生长方法和半导体装置的制造方法
US20120021549A1 (en) * 2009-04-03 2012-01-26 Panasonic Corporation Method for growing crystals of nitride semiconductor, and process for manufacture of semiconductor device
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5789929B2 (ja) * 2010-08-03 2015-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
KR20140068793A (ko) * 2010-10-29 2014-06-09 더 리전츠 오브 더 유니버시티 오브 캘리포니아 서로 간에 예각, 직각 또는 둔각을 이루는 적어도 2개의 표면들을 가진 시드들 상에서의 ⅲ-족 질화물 결정들의 암모니아 열적 성장
WO2012056928A1 (ja) * 2010-10-29 2012-05-03 株式会社トクヤマ 光学素子の製造方法
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
KR101877396B1 (ko) * 2011-09-07 2018-08-09 엘지이노텍 주식회사 발광소자
KR101433548B1 (ko) * 2011-09-12 2014-08-22 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
WO2013042297A1 (ja) * 2011-09-20 2013-03-28 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子及びそれを用いた光源装置
EP3656895A1 (en) * 2012-01-11 2020-05-27 Osaka University Method for producing group iii nitride crystals
KR102288547B1 (ko) 2012-03-30 2021-08-10 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 결정 및 주기표 제 13 족 금속 질화물 결정의 제조 방법
JP2013209274A (ja) * 2012-03-30 2013-10-10 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物結晶
JP6004550B2 (ja) * 2012-12-20 2016-10-12 日本碍子株式会社 種結晶基板、複合基板および機能素子
WO2014129544A1 (ja) 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
JP6032099B2 (ja) * 2013-03-29 2016-11-24 三菱化学株式会社 周期表第１３族金属窒化物半導体結晶の製造方法
JP2015013791A (ja) * 2013-06-06 2015-01-22 三菱化学株式会社 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶
WO2014200001A1 (ja) * 2013-06-10 2014-12-18 株式会社トクヤマ アルミニウム系ｉｉｉ族窒化物単結晶の製造方法
TWI679320B (zh) * 2013-08-08 2019-12-11 日商三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法
JP2015199631A (ja) * 2014-04-09 2015-11-12 古河機械金属株式会社 接合基板、接合基板の製造方法、及び、ｉｉｉ族窒化物半導体の製造方法
EP3255181A4 (en) * 2015-02-06 2018-01-10 Mitsubishi Chemical Corporation GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
JP6135954B2 (ja) 2015-10-22 2017-05-31 ウシオ電機株式会社 窒化物半導体発光素子
JP6365992B2 (ja) * 2016-03-25 2018-08-01 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物結晶製造方法及びｒａｍｏ４基板
JP6861490B2 (ja) * 2016-09-07 2021-04-21 株式会社サイオクス 窒化物結晶基板の製造方法および結晶成長用基板
JP7046496B2 (ja) 2017-03-28 2022-04-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板、及び、バルク結晶
JP2019034883A (ja) * 2017-08-21 2019-03-07 株式会社Flosfia 結晶膜の製造方法
JP7182262B2 (ja) 2018-12-10 2022-12-02 パナソニックＩｐマネジメント株式会社 Ｒａｍｏ４基板およびその製造方法、ならびにｉｉｉ族窒化物半導体
JP7228467B2 (ja) * 2019-05-27 2023-02-24 信越化学工業株式会社 Ｉｉｉ族化合物基板の製造方法及びｉｉｉ族化合物基板
WO2025191815A1 (ja) * 2024-03-14 2025-09-18 日本碍子株式会社 ＡｌＮ単結晶基板及びデバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029897A (ja) 2000-07-10 2002-01-29 Sumitomo Electric Ind Ltd 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2002169104A (ja) 2000-12-01 2002-06-14 Sumitomo Electric Ind Ltd 光デバイス
JP2004262755A (ja) 2000-08-24 2004-09-24 Nichia Chem Ind Ltd 窒化物半導体の成長方法と窒化物半導体基板
JP2005060227A (ja) 2004-09-30 2005-03-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及び半導体基板

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335750A (ja) 1997-06-03 1998-12-18 Sony Corp 半導体基板および半導体装置
JP3556916B2 (ja) 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP3927218B2 (ja) * 2000-09-18 2007-06-06 三菱電線工業株式会社 半導体基材
JP2002293697A (ja) * 2001-03-29 2002-10-09 Sumitomo Electric Ind Ltd ＧａＮエピタキシャル層の成長方法
US7303630B2 (en) * 2003-11-05 2007-12-04 Sumitomo Electric Industries, Ltd. Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
US20070280872A1 (en) 2001-09-19 2007-12-06 Sumitomo Electric Industries, Ltd. Method of growing gallium nitride crystal and gallium nitride substrate
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP4573049B2 (ja) * 2001-09-19 2010-11-04 住友電気工業株式会社 窒化ガリウム結晶、窒化ガリウム基板及び半導体レーザデバイス
JP3864870B2 (ja) 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
US7556687B2 (en) 2001-09-19 2009-07-07 Sumitomo Electric Industries, Ltd. Gallium nitride crystal substrate and method of producing same
US20080006201A1 (en) 2001-09-19 2008-01-10 Sumitomo Electric Industries, Ltd. Method of growing gallium nitride crystal
WO2003035945A2 (en) 2001-10-26 2003-05-01 Ammono Sp. Zo.O. Substrate for epitaxy
JP4383172B2 (ja) 2001-10-26 2009-12-16 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物バルク単結晶層を用いる発光素子構造及びその製造方法
JP2003218043A (ja) * 2002-01-28 2003-07-31 Nikko Materials Co Ltd ＧａＮ系化合物半導体結晶の製造方法
WO2004061969A1 (en) * 2002-12-16 2004-07-22 The Regents Of The University Of California Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
US7208393B2 (en) 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
EP1495167A1 (en) * 2002-04-15 2005-01-12 The Regents Of The University Of California NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
AU2003285769A1 (en) 2002-12-11 2004-06-30 Ammono Sp. Z O.O. A substrate for epitaxy and a method of preparing the same
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
JP4340866B2 (ja) * 2003-11-14 2009-10-07 日立電線株式会社 窒化物半導体基板及びその製造方法
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP4581490B2 (ja) * 2004-05-31 2010-11-17 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
JP2006016294A (ja) * 2004-05-31 2006-01-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法、ｉｉｉ族窒化物結晶基板および半導体デバイス
JP5014804B2 (ja) * 2004-06-11 2012-08-29 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン バルク単結晶ガリウム含有窒化物およびその用途
JP4551203B2 (ja) 2004-12-08 2010-09-22 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4997744B2 (ja) * 2004-12-24 2012-08-08 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP4735949B2 (ja) * 2005-04-08 2011-07-27 日立電線株式会社 Ｉｉｉ−ｖ族窒化物半導体結晶の製造方法およびｉｉｉ−ｖ族窒化物半導体基板の製造方法
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法
TW200703463A (en) * 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
JP2007048869A (ja) 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
WO2007029655A1 (ja) * 2005-09-05 2007-03-15 Matsushita Electric Industrial Co., Ltd. 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法
PL1801855T3 (pl) * 2005-12-22 2009-06-30 Freiberger Compound Mat Gmbh Proces selektywnego maskowania warstw III-N i przygotowywania wolnostojących warstw III-N lub urządzeń
JP2008285364A (ja) * 2007-05-17 2008-11-27 Sumitomo Electric Ind Ltd ＧａＮ基板、それを用いたエピタキシャル基板及び半導体発光素子
WO2009110436A1 (ja) 2008-03-03 2009-09-11 三菱化学株式会社 窒化物半導体結晶とその製造方法
WO2010140564A1 (ja) 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029897A (ja) 2000-07-10 2002-01-29 Sumitomo Electric Ind Ltd 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2004262755A (ja) 2000-08-24 2004-09-24 Nichia Chem Ind Ltd 窒化物半導体の成長方法と窒化物半導体基板
JP2002169104A (ja) 2000-12-01 2002-06-14 Sumitomo Electric Ind Ltd 光デバイス
JP2005060227A (ja) 2004-09-30 2005-03-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及び半導体基板

Also Published As

Publication number Publication date
US9112096B2 (en) 2015-08-18
JP5725086B2 (ja) 2015-05-27
US20130320394A1 (en) 2013-12-05
EP2154272A4 (en) 2011-04-27
US20120305983A1 (en) 2012-12-06
JP5282766B2 (ja) 2013-09-04
KR20100017798A (ko) 2010-02-16
JP2010222253A (ja) 2010-10-07
JP2010222254A (ja) 2010-10-07
WO2008143166A1 (ja) 2008-11-27
US8269251B2 (en) 2012-09-18
US20100148212A1 (en) 2010-06-17
JP2008308401A (ja) 2008-12-25
JP2013230972A (ja) 2013-11-14
JP4586936B2 (ja) 2010-11-24
EP2154272A1 (en) 2010-02-17

Similar Documents

Publication Publication Date Title
JP5725086B2 (ja) Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス
JP5370613B2 (ja) 窒化物半導体結晶およびその製造方法
US20120112320A1 (en) Nitride semiconductor crystal and production process thereof
JP5509680B2 (ja) Ｉｉｉ族窒化物結晶及びその製造方法
US10023976B2 (en) Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
JP2018052797A (ja) ＧａＮ結晶の製造方法
WO2013058352A1 (ja) Ｉｉｉ族窒化物半導体結晶
KR20130141576A (ko) Ⅲ 족 질화물 반도체 기판 및 그 제조 방법, 그리고 반도체 발광 디바이스 및 그 제조 방법
JP5445105B2 (ja) Ｉｉｉ族窒化物結晶の製造方法及びｉｉｉ族窒化物結晶
JP5949064B2 (ja) ＧａＮバルク結晶
JP2013082611A (ja) Ｉｉｉ族窒化物半導体結晶とその製造方法、およびｉｉｉ族窒化物基板
JP2013075791A (ja) Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体結晶
JP2013212945A (ja) 第１３族窒化物結晶の製造方法及び第１３族窒化物結晶
JP2013040059A (ja) Ｉｉｉ族窒化物半導体結晶の製造方法、及び該製造方法により製造されるｉｉｉ族窒化物半導体結晶
JP2011195388A (ja) Ｉｉｉ族窒化物半導体結晶とその製造方法、およびｉｉｉ族窒化物半導体結晶の成長用下地基板
US20250122642A1 (en) GaN CRYSTAL AND GaN WAFER
JP2013170096A (ja) 第１３族窒化物結晶の製造方法
JP2013199412A (ja) Ｉｉｉ族窒化物半導体結晶の製造方法
JP2006351641A (ja) Ｉｉｉ族窒化物半導体基板の製造方法
JP2018118873A (ja) 窒化物半導体基板の製造方法
JP2012136418A (ja) Ｉｉｉ族窒化物半導体基板とその製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20091214

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20130426

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140528

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20141119

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150126

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150126

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20180103

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20180103

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20190103

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20190103

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20200103

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20200103

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210118

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20220104

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20230105

Start annual number: 9

End annual number: 9