KR101471823B1 - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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Publication number
KR101471823B1
KR101471823B1 KR1020080026374A KR20080026374A KR101471823B1 KR 101471823 B1 KR101471823 B1 KR 101471823B1 KR 1020080026374 A KR1020080026374 A KR 1020080026374A KR 20080026374 A KR20080026374 A KR 20080026374A KR 101471823 B1 KR101471823 B1 KR 101471823B1
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insulating layer
layer
semiconductor
film
region
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KR20080087684A (ko
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신야 사사가와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020080026374A 2007-03-26 2008-03-21 반도체 장치 및 그 제작 방법 Active KR101471823B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00079609 2007-03-26
JP2007079609 2007-03-26

Related Child Applications (2)

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KR1020140041294A Division KR101425850B1 (ko) 2007-03-26 2014-04-07 반도체 장치 제작 방법
KR1020140089817A Division KR101522860B1 (ko) 2007-03-26 2014-07-16 반도체 장치

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KR20080087684A KR20080087684A (ko) 2008-10-01
KR101471823B1 true KR101471823B1 (ko) 2014-12-11

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KR1020140041294A Expired - Fee Related KR101425850B1 (ko) 2007-03-26 2014-04-07 반도체 장치 제작 방법
KR1020140089817A Active KR101522860B1 (ko) 2007-03-26 2014-07-16 반도체 장치

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KR1020140089817A Active KR101522860B1 (ko) 2007-03-26 2014-07-16 반도체 장치

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US (3) US7709368B2 (enExample)
JP (2) JP5512930B2 (enExample)
KR (3) KR101471823B1 (enExample)

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US8115206B2 (en) * 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8178927B2 (en) * 2008-05-14 2012-05-15 Qimonda Ag Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same
JP5525224B2 (ja) 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2011003797A (ja) * 2009-06-19 2011-01-06 Toshiba Corp 半導体装置及びその製造方法
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2013042696A1 (en) * 2011-09-23 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6076038B2 (ja) * 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
WO2013169074A1 (en) 2012-05-10 2013-11-14 Samsung Electronics Co., Ltd. Method and apparatus for transmitting and receiving frame configuration information in tdd wireless communication system
KR102188065B1 (ko) * 2014-05-23 2020-12-07 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법
CN104157695B (zh) * 2014-07-14 2017-02-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
US10515849B2 (en) * 2017-11-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device, interconnection structure and method for forming the same
CN109755260A (zh) * 2018-12-24 2019-05-14 惠科股份有限公司 一种显示面板、显示面板的制造方法和显示装置
CN115322095A (zh) 2021-01-27 2022-11-11 Ａｇｃ株式会社 他氟前列素的纯化方法
KR20250034385A (ko) * 2022-07-06 2025-03-11 보에 테크놀로지 그룹 컴퍼니 리미티드 디스플레이 기판과 그 제조 방법 및 디스플레이 장치

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Publication number Publication date
KR101522860B1 (ko) 2015-05-26
US7709368B2 (en) 2010-05-04
JP2008270758A (ja) 2008-11-06
KR101425850B1 (ko) 2014-08-01
US20110248345A1 (en) 2011-10-13
US7969012B2 (en) 2011-06-28
JP5779266B2 (ja) 2015-09-16
US20100176461A1 (en) 2010-07-15
JP2014160837A (ja) 2014-09-04
KR20140051882A (ko) 2014-05-02
KR20080087684A (ko) 2008-10-01
KR20140093921A (ko) 2014-07-29
JP5512930B2 (ja) 2014-06-04
US8581413B2 (en) 2013-11-12
US20080237876A1 (en) 2008-10-02

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