JP5512930B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5512930B2
JP5512930B2 JP2008060846A JP2008060846A JP5512930B2 JP 5512930 B2 JP5512930 B2 JP 5512930B2 JP 2008060846 A JP2008060846 A JP 2008060846A JP 2008060846 A JP2008060846 A JP 2008060846A JP 5512930 B2 JP5512930 B2 JP 5512930B2
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Prior art keywords
insulating layer
layer
semiconductor
film
semiconductor device
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Expired - Fee Related
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JP2008060846A
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English (en)
Japanese (ja)
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JP2008270758A (ja
JP2008270758A5 (enExample
Inventor
慎也 笹川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008060846A priority Critical patent/JP5512930B2/ja
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Publication of JP2008270758A5 publication Critical patent/JP2008270758A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008060846A 2007-03-26 2008-03-11 半導体装置の作製方法 Expired - Fee Related JP5512930B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008060846A JP5512930B2 (ja) 2007-03-26 2008-03-11 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007079609 2007-03-26
JP2007079609 2007-03-26
JP2008060846A JP5512930B2 (ja) 2007-03-26 2008-03-11 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014065149A Division JP5779266B2 (ja) 2007-03-26 2014-03-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2008270758A JP2008270758A (ja) 2008-11-06
JP2008270758A5 JP2008270758A5 (enExample) 2011-04-21
JP5512930B2 true JP5512930B2 (ja) 2014-06-04

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JP2008060846A Expired - Fee Related JP5512930B2 (ja) 2007-03-26 2008-03-11 半導体装置の作製方法
JP2014065149A Active JP5779266B2 (ja) 2007-03-26 2014-03-27 半導体装置

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Country Status (3)

Country Link
US (3) US7709368B2 (enExample)
JP (2) JP5512930B2 (enExample)
KR (3) KR101471823B1 (enExample)

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US8178927B2 (en) * 2008-05-14 2012-05-15 Qimonda Ag Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same
JP5525224B2 (ja) 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
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WO2013042696A1 (en) * 2011-09-23 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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WO2013169074A1 (en) 2012-05-10 2013-11-14 Samsung Electronics Co., Ltd. Method and apparatus for transmitting and receiving frame configuration information in tdd wireless communication system
KR102188065B1 (ko) * 2014-05-23 2020-12-07 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법
CN104157695B (zh) * 2014-07-14 2017-02-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
US10515849B2 (en) * 2017-11-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device, interconnection structure and method for forming the same
CN109755260A (zh) * 2018-12-24 2019-05-14 惠科股份有限公司 一种显示面板、显示面板的制造方法和显示装置
CN115322095A (zh) 2021-01-27 2022-11-11 Ａｇｃ株式会社 他氟前列素的纯化方法
KR20250034385A (ko) * 2022-07-06 2025-03-11 보에 테크놀로지 그룹 컴퍼니 리미티드 디스플레이 기판과 그 제조 방법 및 디스플레이 장치

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Also Published As

Publication number Publication date
KR101522860B1 (ko) 2015-05-26
US7709368B2 (en) 2010-05-04
KR101471823B1 (ko) 2014-12-11
JP2008270758A (ja) 2008-11-06
KR101425850B1 (ko) 2014-08-01
US20110248345A1 (en) 2011-10-13
US7969012B2 (en) 2011-06-28
JP5779266B2 (ja) 2015-09-16
US20100176461A1 (en) 2010-07-15
JP2014160837A (ja) 2014-09-04
KR20140051882A (ko) 2014-05-02
KR20080087684A (ko) 2008-10-01
KR20140093921A (ko) 2014-07-29
US8581413B2 (en) 2013-11-12
US20080237876A1 (en) 2008-10-02

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