KR101410921B1 - 기판 프로세싱 챔버를 위한 링 조립체 - Google Patents

기판 프로세싱 챔버를 위한 링 조립체 Download PDF

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Publication number
KR101410921B1
KR101410921B1 KR1020060106775A KR20060106775A KR101410921B1 KR 101410921 B1 KR101410921 B1 KR 101410921B1 KR 1020060106775 A KR1020060106775 A KR 1020060106775A KR 20060106775 A KR20060106775 A KR 20060106775A KR 101410921 B1 KR101410921 B1 KR 101410921B1
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South Korea
Prior art keywords
ring
substrate support
substrate
processing chamber
ring assembly
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KR20070115564A (ko
Inventor
제니퍼 틸러
알렌 케이. 라우
마르크 오'도넬 슈발처
스티븐 브이. 샌소니
케이쓰 에이. 밀러
크리스토퍼 보이트노트
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1020060106775A 2006-05-30 2006-10-31 기판 프로세싱 챔버를 위한 링 조립체 Active KR101410921B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/444,175 2006-05-30
US11/444,175 US20070283884A1 (en) 2006-05-30 2006-05-30 Ring assembly for substrate processing chamber

Publications (2)

Publication Number Publication Date
KR20070115564A KR20070115564A (ko) 2007-12-06
KR101410921B1 true KR101410921B1 (ko) 2014-07-02

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KR1020060106775A Active KR101410921B1 (ko) 2006-05-30 2006-10-31 기판 프로세싱 챔버를 위한 링 조립체

Country Status (5)

Country Link
US (2) US20070283884A1 (https=)
JP (1) JP2007321244A (https=)
KR (1) KR101410921B1 (https=)
CN (2) CN102157425B (https=)
TW (1) TWI383075B (https=)

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JP2007321244A (ja) 2007-12-13
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