KR101291821B1 - ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 - Google Patents

ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 Download PDF

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KR101291821B1
KR101291821B1 KR1020117021177A KR20117021177A KR101291821B1 KR 101291821 B1 KR101291821 B1 KR 101291821B1 KR 1020117021177 A KR1020117021177 A KR 1020117021177A KR 20117021177 A KR20117021177 A KR 20117021177A KR 101291821 B1 KR101291821 B1 KR 101291821B1
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film
annealing
forming
cvd
gas
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KR20110124304A (ko
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다카라 가토
야스시 미즈사와
다츠오 하타노
아츠시 고미
치아키 야스무로
오사무 요코야마
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117021177A 2009-03-12 2010-02-25 ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법 Active KR101291821B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009059605A JP5193913B2 (ja) 2009-03-12 2009-03-12 ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法
JPJP-P-2009-059605 2009-03-12
PCT/JP2010/052938 WO2010103930A1 (ja) 2009-03-12 2010-02-25 ＣＶＤ－Ｒｕ膜の形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20110124304A KR20110124304A (ko) 2011-11-16
KR101291821B1 true KR101291821B1 (ko) 2013-07-31

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KR1020117021177A Active KR101291821B1 (ko) 2009-03-12 2010-02-25 ＣＶＤ-Ｒｕ막의 형성 방법 및 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US20120064717A1 (https=)
JP (1) JP5193913B2 (https=)
KR (1) KR101291821B1 (https=)
CN (1) CN102349138A (https=)
TW (1) TWI467044B (https=)
WO (1) WO2010103930A1 (https=)

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WO2012133400A1 (ja) * 2011-03-30 2012-10-04 東京エレクトロン株式会社 Ｃｕ配線の形成方法
US20130146468A1 (en) * 2011-12-08 2013-06-13 Applied Materials, Inc. Chemical vapor deposition (cvd) of ruthenium films and applications for same
US8517769B1 (en) 2012-03-16 2013-08-27 Globalfoundries Inc. Methods of forming copper-based conductive structures on an integrated circuit device
US8673766B2 (en) * 2012-05-21 2014-03-18 Globalfoundries Inc. Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition
JP2014017345A (ja) * 2012-07-09 2014-01-30 Tokyo Electron Ltd Ｃｕ配線の形成方法
JP2015160963A (ja) 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
KR102382054B1 (ko) 2014-11-05 2022-04-01 코닝 인코포레이티드 상향식 전해 도금 방법
JP6467239B2 (ja) 2015-02-16 2019-02-06 東京エレクトロン株式会社 ルテニウム膜の成膜方法、成膜装置及び半導体装置の製造方法
KR102324826B1 (ko) 2015-04-02 2021-11-11 삼성전자주식회사 배선 구조물, 배선 구조물 형성 방법 및 반도체 장치의 제조 방법
JP6419644B2 (ja) 2015-05-21 2018-11-07 東京エレクトロン株式会社 金属ナノドットの形成方法、金属ナノドット形成装置及び半導体装置の製造方法
US9805976B2 (en) 2016-01-08 2017-10-31 Applied Materials, Inc. Co or Ni and Cu integration for small and large features in integrated circuits
WO2017143180A1 (en) * 2016-02-19 2017-08-24 Tokyo Electron Limited Ruthenium metal deposition method for electrical connections
US20170241019A1 (en) * 2016-02-22 2017-08-24 Ultratech, Inc. Pe-ald methods with reduced quartz-based contamination
JP6470876B2 (ja) * 2016-05-16 2019-02-13 株式会社アルバック Ｃｕ膜の形成方法
JP6785130B2 (ja) * 2016-07-06 2020-11-18 東京エレクトロン株式会社 ルテニウム配線およびその製造方法
JP6807251B2 (ja) 2017-03-02 2021-01-06 東京エレクトロン株式会社 ルテニウム配線の製造方法
JP7277871B2 (ja) * 2017-10-04 2023-05-19 東京エレクトロン株式会社 相互接続のためのルテニウム金属機能フィリング
US10917966B2 (en) 2018-01-29 2021-02-09 Corning Incorporated Articles including metallized vias
JP2020147772A (ja) * 2019-03-11 2020-09-17 東京エレクトロン株式会社 成膜装置及び成膜方法
US20220139776A1 (en) * 2020-11-03 2022-05-05 Tokyo Electron Limited Method for filling recessed features in semiconductor devices with a low-resistivity metal
JP2022152438A (ja) * 2021-03-29 2022-10-12 東京エレクトロン株式会社 ルテニウム膜の成膜方法及び処理装置

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US20070069383A1 (en) * 2005-09-28 2007-03-29 Tokyo Electron Limited Semiconductor device containing a ruthenium diffusion barrier and method of forming
JP2008244017A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法

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KR100389913B1 (ko) * 1999-12-23 2003-07-04 삼성전자주식회사 공정조건을 변화시키면서 화학기상 증착법으로 루테늄막을형성하는 방법 및 그에 의해 형성된 루테늄막
JP4342131B2 (ja) * 2001-10-30 2009-10-14 富士通マイクロエレクトロニクス株式会社 容量素子の製造方法及び半導体装置の製造方法
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US20050069641A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Method for depositing metal layers using sequential flow deposition
JP4889227B2 (ja) * 2005-03-23 2012-03-07 東京エレクトロン株式会社 基板処理方法および成膜方法
JP2008041700A (ja) * 2006-08-01 2008-02-21 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
US7476615B2 (en) * 2006-11-01 2009-01-13 Intel Corporation Deposition process for iodine-doped ruthenium barrier layers

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US20070069383A1 (en) * 2005-09-28 2007-03-29 Tokyo Electron Limited Semiconductor device containing a ruthenium diffusion barrier and method of forming
JP2008244017A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法

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Publication number Publication date
TW201043721A (en) 2010-12-16
JP5193913B2 (ja) 2013-05-08
WO2010103930A1 (ja) 2010-09-16
TWI467044B (zh) 2015-01-01
US20120064717A1 (en) 2012-03-15
JP2010212601A (ja) 2010-09-24
CN102349138A (zh) 2012-02-08
KR20110124304A (ko) 2011-11-16

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