KR101266656B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR101266656B1
KR101266656B1 KR1020060111748A KR20060111748A KR101266656B1 KR 101266656 B1 KR101266656 B1 KR 101266656B1 KR 1020060111748 A KR1020060111748 A KR 1020060111748A KR 20060111748 A KR20060111748 A KR 20060111748A KR 101266656 B1 KR101266656 B1 KR 101266656B1
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KR
South Korea
Prior art keywords
film
insulating film
interlayer insulating
tmr
lower electrode
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Expired - Fee Related
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KR1020060111748A
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English (en)
Korean (ko)
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KR20070051708A (ko
Inventor
하루오 후루따
료우지 마쯔다
슈우이찌 우에노
다께하루 구로이와
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20070051708A publication Critical patent/KR20070051708A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020060111748A 2005-11-14 2006-11-13 반도체 장치 및 그 제조 방법 Expired - Fee Related KR101266656B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005328845 2005-11-14
JPJP-P-2005-00328845 2005-11-14
JPJP-P-2006-00276259 2006-10-10
JP2006276259A JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20070051708A KR20070051708A (ko) 2007-05-18
KR101266656B1 true KR101266656B1 (ko) 2013-05-22

Family

ID=38039873

Family Applications (1)

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KR1020060111748A Expired - Fee Related KR101266656B1 (ko) 2005-11-14 2006-11-13 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (3) US7605420B2 (https=)
JP (1) JP5072012B2 (https=)
KR (1) KR101266656B1 (https=)
CN (2) CN102157680B (https=)
TW (1) TW200807775A (https=)

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JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5107128B2 (ja) * 2008-04-23 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009295737A (ja) 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2010016031A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体記憶装置の製造方法
JP5203844B2 (ja) 2008-08-07 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
JP2012069607A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
EP2652791B1 (en) 2010-12-17 2017-03-01 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
TWI445225B (zh) * 2011-11-07 2014-07-11 Voltafield Technology Corp 磁阻元件結構形成方法
US8790935B1 (en) * 2012-10-22 2014-07-29 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device with via integration
KR102099191B1 (ko) * 2013-03-15 2020-05-15 인텔 코포레이션 내장된 자기 터널 접합을 포함하는 로직 칩
WO2015147875A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Modulation of magnetic properties through implantation and associated structures
US9614143B2 (en) * 2015-06-09 2017-04-04 Qualcomm Incorporated De-integrated trench formation for advanced MRAM integration
US9666790B2 (en) * 2015-07-17 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
US10411068B2 (en) 2015-11-23 2019-09-10 Intel Corporation Electrical contacts for magnetoresistive random access memory devices
US9771261B1 (en) * 2016-03-17 2017-09-26 Texas Instruments Incorporated Selective patterning of an integrated fluxgate device
US12387772B2 (en) 2020-08-10 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for MRAM devices with a slot via
US12310246B2 (en) * 2022-05-31 2025-05-20 Allegro Microsystems, Llc Fabricating an electroconductive contact on a top surface of a tunneling magnetoresistance element

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DE19701009A1 (de) * 1997-01-14 1998-07-16 Leonhard Feiler Verfahren zur Herstellung von Perylen-3,4-dicarbonsäureanhydriden
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP4309075B2 (ja) 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
JP2003086773A (ja) 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
JP3843827B2 (ja) 2001-12-07 2006-11-08 ヤマハ株式会社 磁気トンネル接合素子とその製法
JP3888168B2 (ja) 2002-01-21 2007-02-28 ヤマハ株式会社 磁気トンネル接合素子の製法
JP2003243630A (ja) * 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
US6627932B1 (en) * 2002-04-11 2003-09-30 Micron Technology, Inc. Magnetoresistive memory device
JP2004055918A (ja) 2002-07-22 2004-02-19 Toshiba Corp 磁気記憶装置及びその製造方法
US20040032010A1 (en) * 2002-08-14 2004-02-19 Kools Jacques Constant Stefan Amorphous soft magnetic shielding and keeper for MRAM devices
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP2004193282A (ja) 2002-12-10 2004-07-08 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004235443A (ja) * 2003-01-30 2004-08-19 Renesas Technology Corp 薄膜磁性体記憶装置およびその製造方法
JP4618989B2 (ja) * 2003-02-18 2011-01-26 三菱電機株式会社 磁気記憶半導体装置
JP4008857B2 (ja) * 2003-03-24 2007-11-14 株式会社東芝 半導体記憶装置及びその製造方法
JP3831353B2 (ja) 2003-03-27 2006-10-11 株式会社東芝 磁気ランダムアクセスメモリ
JP2004296859A (ja) 2003-03-27 2004-10-21 Renesas Technology Corp 磁気記録素子及び磁気記録素子の製造方法
JP4534441B2 (ja) * 2003-07-25 2010-09-01 Ｔｄｋ株式会社 磁気記憶セル及びこれを用いた磁気メモリデバイス
JP4074281B2 (ja) * 2004-09-14 2008-04-09 株式会社東芝 磁気ランダムアクセスメモリ
JP2006261592A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
US7122386B1 (en) * 2005-09-21 2006-10-17 Magic Technologies, Inc. Method of fabricating contact pad for magnetic random access memory
JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20090315128A1 (en) 2009-12-24
CN101162755B (zh) 2011-04-13
US20070108543A1 (en) 2007-05-17
TW200807775A (en) 2008-02-01
US7973376B2 (en) 2011-07-05
US7605420B2 (en) 2009-10-20
CN102157680B (zh) 2013-03-20
CN102157680A (zh) 2011-08-17
CN101162755A (zh) 2008-04-16
US20110204458A1 (en) 2011-08-25
JP5072012B2 (ja) 2012-11-14
JP2007158301A (ja) 2007-06-21
KR20070051708A (ko) 2007-05-18

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