KR101236063B1 - 인듐을 포함하는 캐핑 구조를 갖는 ⅲ 족 나이트라이드계 양자 우물 발광 소자 구조 - Google Patents

인듐을 포함하는 캐핑 구조를 갖는 ⅲ 족 나이트라이드계 양자 우물 발광 소자 구조 Download PDF

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KR101236063B1
KR101236063B1 KR1020077001904A KR20077001904A KR101236063B1 KR 101236063 B1 KR101236063 B1 KR 101236063B1 KR 1020077001904 A KR1020077001904 A KR 1020077001904A KR 20077001904 A KR20077001904 A KR 20077001904A KR 101236063 B1 KR101236063 B1 KR 101236063B1
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layer
iii nitride
group iii
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light emitting
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KR20070042983A (ko
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마이클 존 버그만
데이비드 토드 에머슨
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크리 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020077001904A 2004-07-27 2005-06-24 인듐을 포함하는 캐핑 구조를 갖는 ⅲ 족 나이트라이드계 양자 우물 발광 소자 구조 Expired - Lifetime KR101236063B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/899,791 2004-07-27
US10/899,791 US7692182B2 (en) 2001-05-30 2004-07-27 Group III nitride based quantum well light emitting device structures with an indium containing capping structure
PCT/US2005/022597 WO2006023060A2 (en) 2004-07-27 2005-06-24 Group iii nitride based quantum well light emitting device structures with an indium containing capping structure

Related Child Applications (1)

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KR1020117021897A Division KR101388369B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 발광 다이오드

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KR20070042983A KR20070042983A (ko) 2007-04-24
KR101236063B1 true KR101236063B1 (ko) 2013-02-22

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KR1020117021897A Expired - Lifetime KR101388369B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 발광 다이오드
KR1020077001904A Expired - Lifetime KR101236063B1 (ko) 2004-07-27 2005-06-24 인듐을 포함하는 캐핑 구조를 갖는 ⅲ 족 나이트라이드계 양자 우물 발광 소자 구조
KR1020127003236A Ceased KR20120017473A (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스
KR1020137005591A Expired - Lifetime KR101363826B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스

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KR1020137005591A Expired - Lifetime KR101363826B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스

Country Status (8)

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US (1) US7692182B2 (enExample)
EP (5) EP2259342B1 (enExample)
JP (2) JP2008508720A (enExample)
KR (4) KR101388369B1 (enExample)
CN (1) CN101006590A (enExample)
CA (1) CA2567739C (enExample)
TW (2) TWI394288B (enExample)
WO (1) WO2006023060A2 (enExample)

Cited By (3)

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KR101622097B1 (ko) * 2014-12-01 2016-05-18 전북대학교산학협력단 질화물계 반도체 발광소자 및 이의 제조 방법
KR20170012783A (ko) * 2015-07-24 2017-02-03 전남대학교산학협력단 발광 다이오드 및 이의 제조방법
WO2021256839A1 (ko) * 2020-06-19 2021-12-23 서울바이오시스주식회사 단일칩 복수 대역 발광 다이오드 및 그 응용품

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