KR101182885B1 - 반도체 장치 제조 방법, 템플릿, 및 패턴 검사 데이터 생성 방법 - Google Patents

반도체 장치 제조 방법, 템플릿, 및 패턴 검사 데이터 생성 방법 Download PDF

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KR101182885B1
KR101182885B1 KR1020100019975A KR20100019975A KR101182885B1 KR 101182885 B1 KR101182885 B1 KR 101182885B1 KR 1020100019975 A KR1020100019975 A KR 1020100019975A KR 20100019975 A KR20100019975 A KR 20100019975A KR 101182885 B1 KR101182885 B1 KR 101182885B1
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South Korea
Prior art keywords
pattern
template
data
patterns
mask
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Expired - Fee Related
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KR1020100019975A
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Korean (ko)
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KR20100109374A (ko
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고지 하시모또
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가부시끼가이샤 도시바
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
KR1020100019975A 2009-03-31 2010-03-05 반도체 장치 제조 방법, 템플릿, 및 패턴 검사 데이터 생성 방법 Expired - Fee Related KR101182885B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-086917 2009-03-31
JP2009086917A JP4825891B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法およびテンプレート

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Publication Number Publication Date
KR20100109374A KR20100109374A (ko) 2010-10-08
KR101182885B1 true KR101182885B1 (ko) 2012-09-13

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US (1) US8222150B2 (https=)
JP (1) JP4825891B2 (https=)
KR (1) KR101182885B1 (https=)

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JP5173944B2 (ja) * 2009-06-16 2013-04-03 キヤノン株式会社 インプリント装置及び物品の製造方法
JP5275208B2 (ja) * 2009-12-02 2013-08-28 株式会社東芝 半導体装置の製造方法
JP5337114B2 (ja) * 2010-07-30 2013-11-06 株式会社東芝 パタン形成方法
CN102468136A (zh) * 2010-11-19 2012-05-23 中芯国际集成电路制造(上海)有限公司 双重图形化方法
JP2013065772A (ja) 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法
SG11201403060WA (en) * 2011-12-19 2014-09-26 Canon Nanotechnologies Inc Fabrication of seamless large area master templates for imprint lithography
JP5899931B2 (ja) * 2012-01-06 2016-04-06 大日本印刷株式会社 ナノインプリント用テンプレート及びその製造方法
JP6142539B2 (ja) * 2012-01-20 2017-06-07 東レ株式会社 成形材料
JP6127535B2 (ja) * 2012-02-03 2017-05-17 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6089451B2 (ja) * 2012-05-30 2017-03-08 大日本印刷株式会社 ナノインプリントモールドおよびその製造方法
JP6236918B2 (ja) * 2012-06-26 2017-11-29 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6019967B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法
JP6019966B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法
JP2014079903A (ja) * 2012-10-15 2014-05-08 Hoya Corp インプリント用モールドの製造方法
JP6357753B2 (ja) * 2012-10-30 2018-07-18 大日本印刷株式会社 ナノインプリントモールドの製造方法
JP5983322B2 (ja) * 2012-11-05 2016-08-31 大日本印刷株式会社 パターン構造体の形成方法
JP6003571B2 (ja) * 2012-11-21 2016-10-05 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
US9586343B2 (en) 2012-12-28 2017-03-07 Dai Nippon Printing Co., Ltd. Method for producing nanoimprint mold
JP6127517B2 (ja) * 2013-01-08 2017-05-17 大日本印刷株式会社 インプリントモールドの製造方法
JP6136271B2 (ja) * 2013-01-08 2017-05-31 大日本印刷株式会社 インプリントモールドの製造方法
JP6171453B2 (ja) * 2013-03-25 2017-08-02 大日本印刷株式会社 ナノインプリントモールドの製造方法
JP6115245B2 (ja) * 2013-03-28 2017-04-19 大日本印刷株式会社 ナノインプリント用テンプレートおよびその製造方法
JP6232731B2 (ja) * 2013-04-16 2017-11-22 大日本印刷株式会社 インプリントモールドの製造方法
JP6136721B2 (ja) * 2013-08-01 2017-05-31 大日本印刷株式会社 パターン形成方法及びインプリントモールドの製造方法
JP6156013B2 (ja) * 2013-09-24 2017-07-05 大日本印刷株式会社 インプリントモールドの製造方法
JP6565415B2 (ja) * 2015-07-22 2019-08-28 大日本印刷株式会社 インプリントモールド製造用の基板およびインプリントモールドの製造方法
JP6726834B2 (ja) * 2015-09-24 2020-07-22 東京エレクトロン株式会社 サブ解像度基板パターニングのためのエッチングマスクを形成する方法
JP6183519B2 (ja) * 2016-08-26 2017-08-23 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6311769B2 (ja) * 2016-10-24 2018-04-18 大日本印刷株式会社 ナノインプリント用テンプレート
KR101907039B1 (ko) * 2016-11-04 2018-12-05 한국과학기술연구원 신뢰성 있는 동작 지표, 소자 간 균일성 및 다중 레벨 데이터 저장 특성을 갖는 비휘발성 저항 변화 메모리 소자 및 이의 제조방법
KR102617139B1 (ko) * 2018-04-09 2023-12-26 삼성전자주식회사 반도체 소자 및 그 제조방법
JP2020047634A (ja) 2018-09-14 2020-03-26 キオクシア株式会社 パターン形成方法、マスタテンプレートおよびテンプレートの製造方法
JP2021153133A (ja) 2020-03-24 2021-09-30 キオクシア株式会社 パターン形成方法およびテンプレートの製造方法

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JP2010239009A (ja) 2010-10-21
KR20100109374A (ko) 2010-10-08
US8222150B2 (en) 2012-07-17
JP4825891B2 (ja) 2011-11-30
US20100248482A1 (en) 2010-09-30

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