WO2008032416A1 - Puce d'alignement pour une mesure d'aberration ponctuelle de microscope électronique à balayage - Google Patents

Puce d'alignement pour une mesure d'aberration ponctuelle de microscope électronique à balayage Download PDF

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Publication number
WO2008032416A1
WO2008032416A1 PCT/JP2006/318796 JP2006318796W WO2008032416A1 WO 2008032416 A1 WO2008032416 A1 WO 2008032416A1 JP 2006318796 W JP2006318796 W JP 2006318796W WO 2008032416 A1 WO2008032416 A1 WO 2008032416A1
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WO
WIPO (PCT)
Prior art keywords
pattern
alignment
mold
convex
forming
Prior art date
Application number
PCT/JP2006/318796
Other languages
English (en)
Japanese (ja)
Inventor
Kenya Ohashi
Shinsuke Minata
Yasunori Shoji
Katsunori Nakajima
Original Assignee
Hitachi High-Technologies Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High-Technologies Corporation filed Critical Hitachi High-Technologies Corporation
Priority to JP2008534227A priority Critical patent/JP4654299B2/ja
Priority to PCT/JP2006/318796 priority patent/WO2008032416A1/fr
Publication of WO2008032416A1 publication Critical patent/WO2008032416A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/282—Determination of microscope properties
    • H01J2237/2826—Calibration

Definitions

  • the present invention relates to a alignment chip for measuring and adjusting point aberrations installed in a scanning electron microscope and a pattern forming mold for forming an alignment pattern by imprinting. Background Technology '.
  • Scanning electron microscopes also use this microfabrication technology in the preparation of alignment tips for measuring point aberrations, and are commonly used as a studama adjustment sample, especially for high-precision observation operation microscopes. .
  • the lithography technology for producing this point aberration measurement pattern is approaching its limit, and a new pattern formation method has become necessary.
  • US Pat. No. 5, 7 72, 90 5 discloses a technique for performing fine pattern formation at a low cost. This is because a predetermined pattern is transferred by embossing a mold having the same pattern as the pattern to be formed on the substrate against the resist film layer formed on the surface of the substrate to be transferred. Is. In particular, according to the nanoprint technology described in Japanese Patent Application Laid-Open No. 2 0 4-7 7 1 5 8 7, a silicon wafer can be used as a mold, and a microstructure less than 25 nanometers can be formed by transfer. It is said that there is. Disclosure of the invention
  • the present inventors have studied an imprint technique capable of forming a fine pattern for point aberration correction measurement of a scanning microscope. As a result, the alignment having a conventional fine concentric cylindrical stacked alignment pattern is performed.
  • the following problems were found when forming the tip with the imprinting technology.
  • lithography technology for creating a new mold having a fine concentric columnar alignment pattern is not easy and requires a lot of time and cost.
  • Patent Document 2 discloses a technique for forming multi-level unevenness as a mold transfer pattern structure.
  • the inventors conducted a transfer experiment using a mold having a multi-stage structure, it was difficult to obtain the verticality of the uneven side wall surface suitable for point aberration correction measurement. It turns out that a mold structure is necessary.
  • the present invention solves the above-mentioned problems, and can be easily manufactured at a low cost in an alignment chip for measuring point aberration correction of a scanning electron microscope, and is a novel key suitable for point aberration correction measurement.
  • An object of the present invention is to provide an alignment chip having a alignment pattern.
  • the present invention provides a pattern forming mold for a point aberration correction measurement alignment chip and a method for manufacturing the alignment chip for manufacturing the alignment pattern of the alignment chip with high accuracy and low cost.
  • the purpose is to provide
  • the present invention provides an alignment chip for measuring a point aberration of a scanning electron microscope having an uneven pattern on a surface thereof, wherein the uneven pattern comprises a circular or polygonal closed loop (concentric tube or polygonal tube shape). It features an alignment chip having convex or concave portions.
  • a pattern forming mold for transferring the concavo-convex pattern onto the transfer body by pressing the concavo-convex pattern formed on the surface onto the transfer body, and the concavo-convex pattern forms a circular or polygonal closed loop. It is characterized by a mold for forming an astigmatism measurement alignment pattern having convex or concave portions.
  • a method for manufacturing an alignment chip for measuring point aberrations in a scanning electron microscope comprising pressing a mold having a concavo-convex pattern forming a circular or polygonal closed loop on a surface thereof onto a substrate to be transferred; Separating the mold from the substrate to be transferred, and transferring the concavo-convex pattern to the surface of the substrate to be transferred.
  • this circular or polygonal tubular convex part can be adjusted by adjusting its diameter dimension, and multiple convex parts with different diameters can be produced by nano-printing. It is possible to cope with point aberration correction when using a microscope. .
  • an alignment chip that can be easily manufactured at low cost and has a novel alignment pattern suitable for point aberration correction measurement.
  • a pattern forming mold for the alignment correction chip and a method for manufacturing the alignment chip, in which the alignment pattern of the alignment chip is manufactured with high accuracy and low cost.
  • FIG. 1 is an explanatory view of a cross-sectional structure showing an example of a dot aberration measurement alignment pattern of this embodiment, (a) is a cross-sectional view of a transferred structure, and (b) is an observation view from above. . ⁇
  • FIG. 2 is a cross-sectional view of a mold having a concave circular tube diameter portion of the mold as a cut surface.
  • FIG. 3 is a schematic diagram of a transferred structure having circular tube groups having different diameters. It is an example which shows the shape of a lement chip.
  • FIG. 4 is an example showing the shape of the alignment tip by the transferred structure having a polygonal tube group having different diameters.
  • Fig. 5 is a graph showing the change in the resin filling rate on the pattern wall surface with respect to the area within the loop of the pattern in nanoimprinting.
  • FIG. 6 is a graph showing the number of measurements until completion of the measurement of point aberration with respect to the loop height of the putter in nanoimprint.
  • BEST MODE FOR CARRYING OUT THE INVENTION (1) A nanoprint pattern forming mold according to this embodiment will be described below. Nanoimprint means transfer in the range of about 100 m to several nm. .
  • the mold for forming a nanoimprint pattern according to this embodiment (hereinafter abbreviated as a mold) is for transferring a nano-level pattern to a transferred structure, and the nano-level pattern is transferred to the transferred structure. It has a pattern forming section for transferring.
  • This pattern forming portion has a point-symmetric structure, and has a plurality of concave microstructures for forming convex portions having a shape capable of correcting point aberration called “studama adjustment using an electron beam”.
  • Point aberration correction is based on the point aberration correction program built in the computer in the electron microscope in advance and detects aberration deviations in all directions and performs feed pack control of the electron beam irradiation angle.
  • the fine pattern for that purpose may be a shape having a side wall having a single point-symmetrical outline.
  • a circular tube with an inner diameter of 50 nm and an outer diameter of 7 O nm is a convex part formed on the surface of a transfer medium with a height of 100 nm
  • the point aberration correction called studama adjustment is performed on this circle.
  • the electron beam applied to the inner and outer peripheral surfaces of the tube is reflected and formed.
  • the reflected electron beam is detected in the region where the deviation exceeds 20%, that is, 2 nm with respect to 10 nm, which is the wall thickness indicated by the radius difference between the inner and outer circumferences. If this happens, control the electron beam direction by controlling the insulator lens.
  • the alignment tip is formed by the mold having the concavo-convex pattern constituting the concentric circle or the polygonal closed loop, so that the shape having the side wall described above is formed. Therefore, in the scanning electron microscope Point aberration correction can be performed quickly.
  • the mold for forming the transferred structure has a shape in which a circular tube or a polygonal tube forms a hole in the concave portion because the uneven pattern is obtained by inverting the unevenness of the transferred structure.
  • the method for forming the concave portion for pattern formation described above in the mold is not particularly limited as long as the target forming portion can be formed.
  • photolithography uses electron beam drawing. Method, replica production by nanoimprint, etc., can be selected as appropriate according to the desired processing accuracy.
  • a release material layer for facilitating separation from the transfer pattern forming layer of the transfer substrate may be provided on the outermost surface of the mold on which the pattern forming portion is formed.
  • the release material layer is preferably a heat resistant resin such as a fluorine compound or a fluorine mixture.
  • point aberration correction of a scanning electron microscope can be performed in a short time.
  • stigma adjustment at the observation magnification can be performed by using alignment tips having different diameters.
  • nanoimprinting 'by manufacturing the alignment chip, the cost of measuring and correcting astigmatism components is significantly increased. Can be reduced.
  • the use of a mold in which concentric tubes or polygonal tubes having different diameters are formed in advance enables high-precision and high-efficiency point correction of a scanning electron microscope.
  • FIG. 1 is an explanatory diagram of a cross-sectional structure showing an example of a point aberration measurement client pattern of the present embodiment.
  • a spin coater was used on a Si wafer 1 a having a diameter of 6 inch ⁇ (15 cm ⁇ ) X thickness of about 0.5 mm, and a coating film 1 of 0.5 was formed from a thermoplastic resin resist I.
  • an electron beam drawing device J BX 6 0 0 FS manufactured by JEOL Ltd.
  • the mold of the concave portion of the fine circular tube obtained by exposure by direct drawing with the electron beam EB and development.
  • the tubular pattern 1 c was transferred to the thermoplastic resin resist ridge.
  • FIG. 2 shows a cross-sectional view of the mold with the diameter of the concave circular tube of the mold as the cut surface.
  • the mold has a circular tube with an inner diameter of 50 nm and an outer diameter of 70 nm, a depth of 10 O nm, and recesses 2a. It has become.
  • This mold is formed by directly drawing the silicon substrate 2b with an electron beam. If the pattern of the resist 1b is on the order of several hundred nm or more, Kr laser (wavelength 35 1 nm) or the like may be used instead of the electron beam.
  • the substrate main body of the substrate to be transferred is not particularly limited as long as a target member can be formed, and may have any predetermined strength. Specifically, silicon, various metal materials, glass, ceramics, plastics, etc. are preferably applied.
  • the transfer pattern forming layer of the substrate to be transferred is not particularly limited as long as a target member can be formed, and is selected according to desired processing accuracy.
  • Thermoplastic resins such as polyamide, polyether imide, thermoplastic polyimide, phenol resin, melamine resin, urea resin, epoxy resin, unsaturated polyester resin, alkyd resin, silicon resin
  • Thermosetting resins such as aryl phthalate resin, polyamide bismaleimide, and polybisamide triazole, and materials in which two or more of these are blended can be used.
  • a resin that does not generate gas in a scanning electron microscope or a resin that suppresses an electron beam irradiation decomposition reaction in a scanning electron microscope is preferable.
  • the transfer pattern forming layer is not limited to a resin, and inorganic glass, a low melting point metal, or the like can be used.
  • FIG. 3 is an example showing the shape of the alignment chip by the transferred structure having a group of circular tubes having different diameters.
  • the substrate main body of the substrate to be transferred is not particularly limited as long as it can form a target member, and may have a predetermined strength. Specifically, silicon, various metal materials, glass, ceramic, plastic, etc. are preferably applied.
  • -Fig. 4 shows an example of the shape of the alignment tip by the transferred structure having a polygonal tube group having different diameters.
  • the substrate body of the substrate to be transferred is not particularly limited as long as a target member can be formed, and may have a predetermined strength. Specifically, silicon, various metal materials, glass, ceramic, plastic, etc. are preferably applied.
  • a circular or polygonal closed-loop concavo-convex part is formed on the transferred member, and the step between the closed-loop concave or convex part and the peripheral flat part is 1 0
  • the resin filling rate by nanoimprinting was measured from 0 nm to 1000 nm.
  • Figure 6 shows an example of the results.
  • the number of pattern movements until point aberration measurement refers to whether or not point convergence can be achieved with a single pattern, and if this is not possible due to poor shape, the next pattern is selected as the measurement target, and the electron beam irradiation range Indicates the number of operations to change. It was found that measurement of point aberrations became impossible when the step was 50 nm or less, and the wall height was required to be at least 60 nm.
  • the circular pipe can be a point-symmetric polygonal pipe. It is.
  • the mold for transferring the nano-level pattern is composed of nickel or nickel alloy with a concave part of the circular tube, and it is repeatedly transferred by having a fluorine-based molecular layer for release on the transfer pattern display. It was found that the structure can be fabricated. '
  • the transferred structure is essentially composed of an i3 ⁇ 4 plastic resin that softens by reaching the glass transition point by predetermined heating.
  • a transfer pattern forming layer composed of a thermoplastic resin that is softened by heating at a predetermined temperature on a silicon substrate.
  • the thickness of the thermoplastic resin is 1 j m, the cylindrical convex portion can be formed and held without deviating from the substrate.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention propose une puce d'alignement pour une mesure de correction d'aberration ponctuelle pour microscope électronique à balayage. La puce d'alignement peut être fabriquée simplement et à un faible coût, et dotée d'un nouveau motif d'alignement approprié pour une mesure de correction d'aberration ponctuelle. La surface de puce d'alignement est munie d'un motif irrégulier, qui présente une section en relief ou une section en creux configurant une boucle fermée circulaire ou polygonale.
PCT/JP2006/318796 2006-09-15 2006-09-15 Puce d'alignement pour une mesure d'aberration ponctuelle de microscope électronique à balayage WO2008032416A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008534227A JP4654299B2 (ja) 2006-09-15 2006-09-15 走査型電子顕微鏡点収差計測アライメントチップ
PCT/JP2006/318796 WO2008032416A1 (fr) 2006-09-15 2006-09-15 Puce d'alignement pour une mesure d'aberration ponctuelle de microscope électronique à balayage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/318796 WO2008032416A1 (fr) 2006-09-15 2006-09-15 Puce d'alignement pour une mesure d'aberration ponctuelle de microscope électronique à balayage

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Publication Number Publication Date
WO2008032416A1 true WO2008032416A1 (fr) 2008-03-20

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WO (1) WO2008032416A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239009A (ja) * 2009-03-31 2010-10-21 Toshiba Corp 半導体装置の製造方法およびテンプレート、並びにパターン検査データの作成方法
WO2019110572A1 (fr) * 2017-12-05 2019-06-13 Asml Netherlands B.V. Systèmes et procédés pour accorder et étalonner un appareil à faisceau de particules chargées

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US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
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JPH06181155A (ja) * 1991-06-28 1994-06-28 Digital Equip Corp <Dec> 実際の半導体ウェーハ工程のトポグラフィーに合わせた位置合せ測定システムの直接的校正のための構造および方法
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JP2000156189A (ja) * 1998-07-09 2000-06-06 Nikon Corp 電子ビ―ム装置および電子ビ―ムの軸ずれ検出方法
WO2002040980A1 (fr) * 2000-11-17 2002-05-23 Ebara Corporation Procede et instrument d'inspection de tranches, et appareil a faisceau electronique
JP2003123677A (ja) * 2001-10-15 2003-04-25 Pioneer Electronic Corp 電子ビーム装置及び電子ビーム調整方法
JP2003133214A (ja) * 2001-10-26 2003-05-09 Sony Corp マスクパターン補正方法および半導体装置の製造方法
JP2004071587A (ja) * 2002-08-01 2004-03-04 Hitachi Ltd スタンパとスタンパを用いたパターン転写方法及び転写パターンによる構造体の形成方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239009A (ja) * 2009-03-31 2010-10-21 Toshiba Corp 半導体装置の製造方法およびテンプレート、並びにパターン検査データの作成方法
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WO2019110572A1 (fr) * 2017-12-05 2019-06-13 Asml Netherlands B.V. Systèmes et procédés pour accorder et étalonner un appareil à faisceau de particules chargées

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JPWO2008032416A1 (ja) 2010-01-21
JP4654299B2 (ja) 2011-03-16

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