KR101133880B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101133880B1
KR101133880B1 KR1020090117851A KR20090117851A KR101133880B1 KR 101133880 B1 KR101133880 B1 KR 101133880B1 KR 1020090117851 A KR1020090117851 A KR 1020090117851A KR 20090117851 A KR20090117851 A KR 20090117851A KR 101133880 B1 KR101133880 B1 KR 101133880B1
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KR
South Korea
Prior art keywords
rectifying wall
substrate
wall
processing apparatus
mounting table
Prior art date
Application number
KR1020090117851A
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English (en)
Korean (ko)
Other versions
KR20100062956A (ko
Inventor
마사토 미나미
요시히코 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20100062956A publication Critical patent/KR20100062956A/ko
Application granted granted Critical
Publication of KR101133880B1 publication Critical patent/KR101133880B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020090117851A 2008-12-02 2009-12-01 플라즈마 처리 장치 KR101133880B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008307853A JP5141520B2 (ja) 2008-12-02 2008-12-02 プラズマ処理装置
JPJP-P-2008-307853 2008-12-02

Publications (2)

Publication Number Publication Date
KR20100062956A KR20100062956A (ko) 2010-06-10
KR101133880B1 true KR101133880B1 (ko) 2012-04-09

Family

ID=42346445

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090117851A KR101133880B1 (ko) 2008-12-02 2009-12-01 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP5141520B2 (zh)
KR (1) KR101133880B1 (zh)
CN (1) CN101752172B (zh)
TW (1) TWI403222B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203746815U (zh) * 2011-03-01 2014-07-30 应用材料公司 用于处理基板的腔室
CN104561912B (zh) * 2013-10-15 2017-10-13 宁波江丰电子材料股份有限公司 钛聚焦环的制作方法
KR102215641B1 (ko) * 2013-12-18 2021-02-16 주성엔지니어링(주) 리프트 핀 어셈블리 및 이를 구비하는 기판 처리 장치
EP2937890B1 (en) * 2014-04-22 2020-06-03 Europlasma nv Plasma coating apparatus with a plasma diffuser and method preventing discolouration of a substrate
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
CN110211860B (zh) * 2019-06-26 2021-07-13 南京中电熊猫液晶显示科技有限公司 一种干法刻蚀设备
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN113451191B (zh) * 2020-06-17 2022-11-11 重庆康佳光电技术研究院有限公司 定位装置及蚀刻装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185606A (ja) 1999-10-13 2001-07-06 Tokyo Electron Ltd 半導体処理用の載置台装置、プラズマ処理装置、及び真空処理装置
JP2002329711A (ja) 2001-05-01 2002-11-15 Matsushita Electric Ind Co Ltd 平行平板型電極プラズマ処理装置
JP2009212482A (ja) 2008-02-05 2009-09-17 Tokyo Electron Ltd 処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
JPH11149999A (ja) * 1997-11-18 1999-06-02 Tokyo Electron Ltd プラズマ処理装置
JP3924721B2 (ja) * 1999-12-22 2007-06-06 東京エレクトロン株式会社 シールドリングの分割部材、シールドリング及びプラズマ処理装置
JP2003100721A (ja) * 2001-09-27 2003-04-04 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP3724436B2 (ja) * 2002-02-15 2005-12-07 セイコーエプソン株式会社 整流ウォール及びドライエッチング装置並びに該装置を用いた電気光学装置の製造方法
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
CN100543944C (zh) * 2004-04-30 2009-09-23 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
JP4416601B2 (ja) * 2004-08-05 2010-02-17 シャープ株式会社 プラズマプロセス装置、及びそれを用いた液晶表示装置の製造方法
JP2007042744A (ja) * 2005-08-01 2007-02-15 Sharp Corp プラズマ処理装置
JP2009054720A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 処理装置
JP5113016B2 (ja) * 2008-04-07 2013-01-09 東京エレクトロン株式会社 基板処理装置
JP5120089B2 (ja) * 2008-06-17 2013-01-16 東京エレクトロン株式会社 処理装置
JP5067279B2 (ja) * 2008-06-25 2012-11-07 東京エレクトロン株式会社 処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185606A (ja) 1999-10-13 2001-07-06 Tokyo Electron Ltd 半導体処理用の載置台装置、プラズマ処理装置、及び真空処理装置
JP2002329711A (ja) 2001-05-01 2002-11-15 Matsushita Electric Ind Co Ltd 平行平板型電極プラズマ処理装置
JP2009212482A (ja) 2008-02-05 2009-09-17 Tokyo Electron Ltd 処理装置

Also Published As

Publication number Publication date
JP2010135424A (ja) 2010-06-17
CN101752172A (zh) 2010-06-23
CN101752172B (zh) 2011-10-12
TWI403222B (zh) 2013-07-21
KR20100062956A (ko) 2010-06-10
TW201031285A (en) 2010-08-16
JP5141520B2 (ja) 2013-02-13

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