KR101108389B1 - 처리 챔버 - Google Patents
처리 챔버 Download PDFInfo
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- KR101108389B1 KR101108389B1 KR1020050050315A KR20050050315A KR101108389B1 KR 101108389 B1 KR101108389 B1 KR 101108389B1 KR 1020050050315 A KR1020050050315 A KR 1020050050315A KR 20050050315 A KR20050050315 A KR 20050050315A KR 101108389 B1 KR101108389 B1 KR 101108389B1
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- 238000012545 processing Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000000149 penetrating effect Effects 0.000 claims 4
- 239000011521 glass Substances 0.000 description 19
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/04—Ball or roller bearings
- F16C29/045—Ball or roller bearings having rolling elements journaled in one of the moving parts
- F16C29/046—Ball or roller bearings having rolling elements journaled in one of the moving parts with balls journaled in pockets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
- B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/04—Ball or roller bearings
- F16C29/045—Ball or roller bearings having rolling elements journaled in one of the moving parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
- B65G2249/02—Controlled or contamination-free environments or clean space conditions
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (27)
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- 처리 챔버로서,내부에 지지대가 배치된 챔버 바디; 및상기 지지대의 상부 표면에 각각 배치된 2개 이상의 지지 부재들을 포함하고,상기 지지 부재들 각각은,축방향으로 관통하여 형성된 구경을 가지는 하우징;지지 핀; 및상기 구경 내에 배치된 다수의 베어링 부재들을 포함하고,상기 지지 핀의 적어도 일부가 상기 구경 내에 배치되고,상기 하우징은, 상기 하우징의 제 1 단부를 관통하는 하나 이상의 창 및 상기 하우징의 제 2 단부를 관통하는 하나 이상의 창을 포함하고,상기 베어링 부재들 중 하나의 적어도 일부가 상기 제1 단부 및 상기 제2 단부에 형성된 상기 창 각각의 내부에 배치되며,상기 베어링 부재들 중 하나 이상은 볼 어셈블리를 포함하고, 상기 볼 어셈블리는 큰 구형 부재 및 상기 큰 구형 부재 둘레에 배열된 4개의 작은 구형 부재들을 포함하는, 처리 챔버.
- 제 7 항에 있어서, 상기 큰 구형 부재 및 상기 4개의 작은 구형 부재들은 상기 하우징에 형성된 볼 시트(ball sheet) 내에 배치되는, 처리 챔버.
- 제 7 항에 있어서, 상기 하우징 둘레에 배치된 중공 슬리브(hollow sleeve)를 더 포함하는, 처리 챔버.
- 제 9 항에 있어서, 상기 중공 슬리브는 상기 하우징에 상기 베어링 부재들을 고정하는, 처리 챔버.
- 제 10 항에 있어서, 상기 하우징의 제 1 단부 둘레에 배치된 소켓을 더 포함하며, 상기 소켓은 상기 중공 슬리브의 제 1 단부에 접경하는(abut), 처리 챔버.
- 처리 챔버로서,내부에 지지대가 배치된 챔버 바디; 및상기 지지대의 상부 표면에 각각 배치된 2개 이상의 지지 부재들을 포함하고,상기 지지 부재들 각각은,축방향으로 관통하여 형성된 구경을 가지는 하우징;지지 핀; 및상기 구경 내에 배치된 다수의 베어링 부재들을 포함하고,상기 지지 핀의 적어도 일부가 상기 구경 내에 배치되고,상기 하우징은, 상기 하우징의 제 1 단부를 관통하는 4개의 볼 시트들 및 상기 하우징의 제 2 단부를 관통하는 4개의 볼 시트들을 포함하고, 상기 베어링 부재들 중 하나의 적어도 일부가 각각의 볼 시트의 내부에 배치되며, 상기 베어링 부재들은 볼 어셈블리를 포함하고, 상기 볼 어셈블리는 큰 구형 부재 및 상기 큰 구형 부재 둘레에 배열된 4개의 작은 구형 부재들을 포함하는, 처리 챔버.
- 삭제
- 처리 챔버로서,내부에 지지대가 배치된 챔버 바디; 및상기 지지대의 상부 표면에 각각 배치된 2개 이상의 지지 부재들을 포함하고,상기 지지 부재들 각각은 기판들을 상기 지지대에 대해 로드 및 언로드하도록 구성되고,상기 지지 부재들 각각은,하우징;상기 하우징을 관통하는 구경;지지핀; 및상기 구경 내에 배치된 다수의 베어링 부재들을 포함하며,상기 지지 핀의 적어도 일부가 상기 구경 내에 배치되고,상기 하우징은, 상기 하우징의 제 1 단부를 관통하는 하나 이상의 창 및 상기 하우징의 제 2 단부를 관통하는 하나 이상의 창을 가지고,상기 베어링 부재들 중 하나의 적어도 일부가 상기 제1 단부 및 상기 제2 단부에 형성된 상기 창 각각의 내부에 배치되며,상기 베어링 부재들 중 적어도 하나는 볼 어셈블리를 포함하고, 상기 볼 어셈블리는 큰 구형 부재 및 상기 큰 구형 부재 둘레에 배열된 4개의 작은 구형 부재들을 포함하는, 처리 챔버.
- 제 14 항에 있어서, 상기 큰 구형 부재 및 상기 4개의 작은 구형 부재들은 상기 하우징에 형성된 시트 내에 배치되는, 처리 챔버.
- 제 14 항에 있어서, 상기 하우징 둘레에 배치된 중공 슬리브를 더 포함하는, 처리 챔버.
- 제 16 항에 있어서, 상기 중공 슬리브는 상기 하우징에 상기 베어링 부재들을 고정하는, 처리 챔버.
- 제 16 항에 있어서, 상기 하우징의 제 1 단부 둘레에 배치된 소켓을 더 포함하며, 상기 소켓은 상기 중공 슬리브의 제 1 단부에 접경하는, 처리 챔버.
- 처리 챔버로서,내부에 지지대가 배치된 챔버 바디; 및상기 지지대의 상부 표면에 각각 배치된 2개 이상의 지지 부재들을 포함하고,상기 지지 부재들 각각은 기판들을 상기 지지대에 대해 로드 및 언로드하도록 구성되고,상기 지지 부재들 각각은,하우징;상기 하우징을 관통하는 구경;지지핀; 및상기 구경 내에 배치된 다수의 베어링 부재들을 포함하며,상기 지지 핀의 적어도 일부가 상기 구경 내에 배치되고,상기 하우징은, 상기 하우징의 제 1 단부를 관통하는 4개의 볼 시트들 및 상기 하우징의 제 2 단부를 관통하는 4개의 볼 시트들을 포함하고, 상기 베어링 부재들 중 하나의 적어도 일부가 각각의 볼 시트의 내부에 배치되며, 상기 베어링 부재들은 볼 어셈블리를 포함하고, 상기 볼 어셈블리는 큰 구형 부재 및 상기 큰 구형 부재 둘레에 배열된 4개의 작은 구형 부재들을 포함하는, 처리 챔버.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/779,130 US8033245B2 (en) | 2004-02-12 | 2004-02-12 | Substrate support bushing |
US10/779,130 | 2004-02-12 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040069032A Division KR100597495B1 (ko) | 2004-02-12 | 2004-08-31 | 기판 지지 부재 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110059222A Division KR20110074839A (ko) | 2004-02-12 | 2011-06-17 | 처리 챔버 |
Publications (2)
Publication Number | Publication Date |
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KR20050081179A KR20050081179A (ko) | 2005-08-18 |
KR101108389B1 true KR101108389B1 (ko) | 2012-01-30 |
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040069032A KR100597495B1 (ko) | 2004-02-12 | 2004-08-31 | 기판 지지 부재 |
KR1020050050315A KR101108389B1 (ko) | 2004-02-12 | 2005-06-13 | 처리 챔버 |
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KR1020040069032A KR100597495B1 (ko) | 2004-02-12 | 2004-08-31 | 기판 지지 부재 |
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EP (1) | EP1564791A3 (ko) |
JP (1) | JP4473144B2 (ko) |
KR (3) | KR100597495B1 (ko) |
CN (2) | CN1655336B (ko) |
TW (1) | TWI260064B (ko) |
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KR20190026158A (ko) * | 2017-09-04 | 2019-03-13 | 주성엔지니어링(주) | 지지구조체 |
KR102427077B1 (ko) * | 2017-09-04 | 2022-07-29 | 주성엔지니어링(주) | 지지구조체 |
KR20220110464A (ko) * | 2017-09-04 | 2022-08-08 | 주성엔지니어링(주) | 지지구조체 |
KR102489304B1 (ko) | 2017-09-04 | 2023-01-18 | 주성엔지니어링(주) | 지지구조체 |
TWI794280B (zh) * | 2017-09-04 | 2023-03-01 | 南韓商周星工程股份有限公司 | 支撐結構 |
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US8216422B2 (en) | 2012-07-10 |
CN1655336A (zh) | 2005-08-17 |
US20050180737A1 (en) | 2005-08-18 |
JP4473144B2 (ja) | 2010-06-02 |
JP2005240173A (ja) | 2005-09-08 |
CN1655336B (zh) | 2010-12-22 |
CN101221896A (zh) | 2008-07-16 |
US8033245B2 (en) | 2011-10-11 |
TWI260064B (en) | 2006-08-11 |
KR20050081839A (ko) | 2005-08-19 |
US20050220604A1 (en) | 2005-10-06 |
KR20110074839A (ko) | 2011-07-04 |
TW200527577A (en) | 2005-08-16 |
CN101221896B (zh) | 2010-07-21 |
KR20050081179A (ko) | 2005-08-18 |
KR100597495B1 (ko) | 2006-07-10 |
EP1564791A3 (en) | 2006-08-09 |
EP1564791A2 (en) | 2005-08-17 |
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