KR101106916B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101106916B1
KR101106916B1 KR1020060018925A KR20060018925A KR101106916B1 KR 101106916 B1 KR101106916 B1 KR 101106916B1 KR 1020060018925 A KR1020060018925 A KR 1020060018925A KR 20060018925 A KR20060018925 A KR 20060018925A KR 101106916 B1 KR101106916 B1 KR 101106916B1
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KR
South Korea
Prior art keywords
circuit
voltage
gate
mos transistor
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020060018925A
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English (en)
Korean (ko)
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KR20070007703A (ko
Inventor
기요오 이또
류따 쯔찌야
다까유끼 가와하라
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20070007703A publication Critical patent/KR20070007703A/ko
Application granted granted Critical
Publication of KR101106916B1 publication Critical patent/KR101106916B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0021—Modifications of threshold
    • H03K19/0027—Modifications of threshold in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
KR1020060018925A 2005-07-11 2006-02-27 반도체 장치 Expired - Fee Related KR101106916B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005201054A JP4967264B2 (ja) 2005-07-11 2005-07-11 半導体装置
JPJP-P-2005-00201054 2005-07-11

Publications (2)

Publication Number Publication Date
KR20070007703A KR20070007703A (ko) 2007-01-16
KR101106916B1 true KR101106916B1 (ko) 2012-01-25

Family

ID=36972724

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060018925A Expired - Fee Related KR101106916B1 (ko) 2005-07-11 2006-02-27 반도체 장치

Country Status (6)

Country Link
US (2) US7511558B2 (enExample)
EP (4) EP2207202A1 (enExample)
JP (1) JP4967264B2 (enExample)
KR (1) KR101106916B1 (enExample)
CN (2) CN101281929B (enExample)
TW (1) TW200723499A (enExample)

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JP2007179602A (ja) * 2005-12-27 2007-07-12 Hitachi Ltd 半導体装置
TWI355664B (en) * 2006-09-29 2012-01-01 Macronix Int Co Ltd Method of reading a dual bit memory cell
US7811782B2 (en) * 2007-01-10 2010-10-12 Hemoshear, Llc Use of an in vitro hemodynamic endothelial/smooth muscle cell co-culture model to identify new therapeutic targets for vascular disease
TW200834525A (en) * 2007-02-14 2008-08-16 Advanced Analog Technology Inc Image sticking erasing circuit, the method for performing the same and monitor control circuit thereof
JP2009088387A (ja) * 2007-10-02 2009-04-23 Renesas Technology Corp 半導体装置
JP5234333B2 (ja) * 2008-05-28 2013-07-10 Ｎｌｔテクノロジー株式会社 ゲート線駆動回路、アクティブマトリクス基板及び液晶表示装置
KR101623958B1 (ko) * 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
US20100102872A1 (en) * 2008-10-29 2010-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Dynamic Substrate Bias for PMOS Transistors to Alleviate NBTI Degradation
KR101034615B1 (ko) * 2009-08-11 2011-05-12 주식회사 하이닉스반도체 센스앰프 및 이를 포함하는 반도체 메모리장치
EP2320454A1 (en) * 2009-11-05 2011-05-11 S.O.I.Tec Silicon on Insulator Technologies Substrate holder and clipping device
FR2953636B1 (fr) * 2009-12-08 2012-02-10 Soitec Silicon On Insulator Procede de commande d'une cellule memoire dram sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2957193B1 (fr) 2010-03-03 2012-04-20 Soitec Silicon On Insulator Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante
FR2953643B1 (fr) 2009-12-08 2012-07-27 Soitec Silicon On Insulator Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2953641B1 (fr) 2009-12-08 2012-02-10 S O I Tec Silicon On Insulator Tech Circuit de transistors homogenes sur seoi avec grille de controle arriere enterree sous la couche isolante
US8508289B2 (en) 2009-12-08 2013-08-13 Soitec Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
KR102356530B1 (ko) * 2009-12-28 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
FR2955204B1 (fr) 2010-01-14 2012-07-20 Soitec Silicon On Insulator Cellule memoire dram disposant d'un injecteur bipolaire vertical
FR2955195B1 (fr) 2010-01-14 2012-03-09 Soitec Silicon On Insulator Dispositif de comparaison de donnees dans une memoire adressable par contenu sur seoi
FR2955200B1 (fr) 2010-01-14 2012-07-20 Soitec Silicon On Insulator Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
FR2955203B1 (fr) 2010-01-14 2012-03-23 Soitec Silicon On Insulator Cellule memoire dont le canal traverse une couche dielectrique enterree
FR2957186B1 (fr) 2010-03-08 2012-09-28 Soitec Silicon On Insulator Cellule memoire de type sram
FR2957449B1 (fr) 2010-03-11 2022-07-15 S O I Tec Silicon On Insulator Tech Micro-amplificateur de lecture pour memoire
EP2372716A1 (en) * 2010-04-02 2011-10-05 S.O.I.Tec Silicon on Insulator Technologies Pseudo-inverter circuit on SeOI
FR2958441B1 (fr) 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi
EP2375442A1 (en) 2010-04-06 2011-10-12 S.O.I.Tec Silicon on Insulator Technologies Method for manufacturing a semiconductor substrate
EP2381470B1 (en) 2010-04-22 2012-08-22 Soitec Semiconductor device comprising a field-effect transistor in a silicon-on-insulator structure
US8988152B2 (en) * 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8624632B2 (en) 2012-03-29 2014-01-07 International Business Machines Corporation Sense amplifier-type latch circuits with static bias current for enhanced operating frequency
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US8975950B2 (en) 2012-07-07 2015-03-10 Skyworks Solutions, Inc. Switching device having a discharge circuit for improved intermodulation distortion performance
US9628075B2 (en) 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US9148194B2 (en) 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
FR2999802A1 (fr) * 2012-12-14 2014-06-20 St Microelectronics Sa Cellule cmos realisee dans une technologie fd soi
US9013225B2 (en) 2013-02-04 2015-04-21 Skyworks Solutions, Inc. RF switches having increased voltage swing uniformity
US8803591B1 (en) * 2013-11-06 2014-08-12 Freescale Semiconductor, Inc. MOS transistor with forward bulk-biasing circuit
US20150129967A1 (en) * 2013-11-12 2015-05-14 Stmicroelectronics International N.V. Dual gate fd-soi transistor
US9178517B2 (en) * 2013-11-12 2015-11-03 Stmicroelectronics International N.V. Wide range core supply compatible level shifter circuit
US9800204B2 (en) 2014-03-19 2017-10-24 Stmicroelectronics International N.V. Integrated circuit capacitor including dual gate silicon-on-insulator transistor
FR3034930B1 (fr) 2015-04-10 2019-06-14 Universite De Nice Procede et dispositif d'auto-calibration de circuits multi-grilles
US9972395B2 (en) * 2015-10-05 2018-05-15 Silicon Storage Technology, Inc. Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems
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US10469076B2 (en) * 2016-11-22 2019-11-05 The Curators Of The University Of Missouri Power gating circuit utilizing double-gate fully depleted silicon-on-insulator transistor
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Also Published As

Publication number Publication date
EP2207203A1 (en) 2010-07-14
CN101281929A (zh) 2008-10-08
EP2053657A2 (en) 2009-04-29
EP1744364A3 (en) 2008-06-04
EP2207202A1 (en) 2010-07-14
US20070008027A1 (en) 2007-01-11
US7511558B2 (en) 2009-03-31
US7385436B2 (en) 2008-06-10
KR20070007703A (ko) 2007-01-16
EP1744364A2 (en) 2007-01-17
CN100511688C (zh) 2009-07-08
CN1897284A (zh) 2007-01-17
CN101281929B (zh) 2010-10-13
JP2007019357A (ja) 2007-01-25
EP2053657A3 (en) 2009-07-22
TW200723499A (en) 2007-06-16
US20070152736A1 (en) 2007-07-05
EP2053657B1 (en) 2012-11-07
JP4967264B2 (ja) 2012-07-04

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