KR101067302B1 - 포지티브형 감광성 수지 조성물 - Google Patents

포지티브형 감광성 수지 조성물 Download PDF

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Publication number
KR101067302B1
KR101067302B1 KR1020097000254A KR20097000254A KR101067302B1 KR 101067302 B1 KR101067302 B1 KR 101067302B1 KR 1020097000254 A KR1020097000254 A KR 1020097000254A KR 20097000254 A KR20097000254 A KR 20097000254A KR 101067302 B1 KR101067302 B1 KR 101067302B1
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South Korea
Prior art keywords
acid
compound
photosensitive resin
resin composition
positive photosensitive
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Korean (ko)
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KR20090016765A (ko
Inventor
사토시 시부이
Original Assignee
아사히 가세이 일렉트로닉스 가부시끼가이샤
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polyamides (AREA)
KR1020097000254A 2006-08-15 2007-08-10 포지티브형 감광성 수지 조성물 Active KR101067302B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006221346 2006-08-15
JPJP-P-2006-221346 2006-08-15

Publications (2)

Publication Number Publication Date
KR20090016765A KR20090016765A (ko) 2009-02-17
KR101067302B1 true KR101067302B1 (ko) 2011-09-23

Family

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Country Status (7)

Country Link
US (1) US7687208B2 (https=)
EP (1) EP2056163A4 (https=)
JP (1) JP5171628B2 (https=)
KR (1) KR101067302B1 (https=)
CN (1) CN101495919B (https=)
TW (1) TW200834240A (https=)
WO (1) WO2008020573A1 (https=)

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Publication number Priority date Publication date Assignee Title
US7803510B2 (en) * 2005-08-17 2010-09-28 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive polybenzoxazole precursor compositions
JP4929982B2 (ja) * 2006-10-30 2012-05-09 住友ベークライト株式会社 感光性樹脂組成物、絶縁膜、保護膜および電子機器
JP5241142B2 (ja) * 2007-05-29 2013-07-17 旭化成イーマテリアルズ株式会社 ポジ型感光性樹脂組成物
JP5061792B2 (ja) * 2007-08-21 2012-10-31 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置。
JP5029836B2 (ja) * 2008-03-19 2012-09-19 Jsr株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
KR100914064B1 (ko) 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5167352B2 (ja) * 2008-05-13 2013-03-21 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP5079089B2 (ja) * 2008-05-29 2012-11-21 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置
KR101023089B1 (ko) 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100995079B1 (ko) * 2008-09-29 2010-11-18 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101015859B1 (ko) * 2008-10-07 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2010041795A1 (en) * 2008-10-07 2010-04-15 Cheil Industries Inc. Positive photosensitive resin composition
KR101015857B1 (ko) * 2008-10-07 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101015855B1 (ko) * 2008-10-17 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5410918B2 (ja) * 2008-10-20 2014-02-05 チェイル インダストリーズ インコーポレイテッド ポジティブ型感光性樹脂組成物
JP5421585B2 (ja) * 2008-12-24 2014-02-19 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
KR101333706B1 (ko) 2008-12-30 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333705B1 (ko) 2008-12-31 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
TWI437025B (zh) * 2009-08-14 2014-05-11 Asahi Kasei E Materials Corp An alkali-soluble polymer, a photosensitive resin composition comprising the same, and a use thereof
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP2011138116A (ja) * 2009-12-04 2011-07-14 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜並びにそれらの形成方法
KR101333692B1 (ko) * 2009-12-28 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5571431B2 (ja) * 2010-03-30 2014-08-13 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP2012073612A (ja) * 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) * 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
WO2013003698A2 (en) 2011-06-30 2013-01-03 Echo 360, Inc. Methods and apparatus for an embedded appliance
KR101413076B1 (ko) * 2011-12-23 2014-06-30 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
JP2014071373A (ja) * 2012-09-28 2014-04-21 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP6245180B2 (ja) * 2012-12-21 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
CN104870523B (zh) 2012-12-21 2017-10-31 日立化成杜邦微系统股份有限公司 聚酰亚胺前体、包含该聚酰亚胺前体的感光性树脂组合物、使用其的图案固化膜的制造方法和半导体装置
JP6116954B2 (ja) * 2013-03-22 2017-04-19 旭化成株式会社 感光性樹脂組成物及び硬化レリーフパターンの製造方法
KR20220167137A (ko) 2021-06-11 2022-12-20 한강희 포장 박스
KR20220167530A (ko) 2021-06-14 2022-12-21 한강희 포장 박스
JP7800342B2 (ja) * 2022-08-08 2026-01-16 信越化学工業株式会社 レジスト組成物及びパターン形成方法
CN116836389B (zh) * 2023-09-01 2024-01-26 明士(北京)新材料开发有限公司 一种可低温固化的正性光敏性树脂、树脂组合物、其制备方法及应用

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JP2000131845A (ja) 1998-10-22 2000-05-12 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物、およびそれを用いた半導体装置
JP2001343747A (ja) 2000-03-30 2001-12-14 Nissan Chem Ind Ltd ポジ型感光性ポリイミド樹脂組成物
JP2005250160A (ja) 2004-03-04 2005-09-15 Kyocera Chemical Corp ポジ型感光性樹脂組成物及びその硬化物

Also Published As

Publication number Publication date
US7687208B2 (en) 2010-03-30
EP2056163A1 (en) 2009-05-06
TW200834240A (en) 2008-08-16
CN101495919A (zh) 2009-07-29
CN101495919B (zh) 2015-05-06
WO2008020573A1 (en) 2008-02-21
KR20090016765A (ko) 2009-02-17
TWI359332B (https=) 2012-03-01
JPWO2008020573A1 (ja) 2010-01-07
JP5171628B2 (ja) 2013-03-27
US20090202794A1 (en) 2009-08-13
EP2056163A4 (en) 2009-11-11

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