TWI359332B - - Google Patents

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Publication number
TWI359332B
TWI359332B TW096130029A TW96130029A TWI359332B TW I359332 B TWI359332 B TW I359332B TW 096130029 A TW096130029 A TW 096130029A TW 96130029 A TW96130029 A TW 96130029A TW I359332 B TWI359332 B TW I359332B
Authority
TW
Taiwan
Prior art keywords
acid
mass
parts
compound
dissolution
Prior art date
Application number
TW096130029A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834240A (en
Inventor
Satoshi Shibui
Original Assignee
Asahi Kasei Emd Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Emd Corp filed Critical Asahi Kasei Emd Corp
Publication of TW200834240A publication Critical patent/TW200834240A/zh
Application granted granted Critical
Publication of TWI359332B publication Critical patent/TWI359332B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polyamides (AREA)
TW096130029A 2006-08-15 2007-08-14 Positive photosensitive resin composition TW200834240A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006221346 2006-08-15

Publications (2)

Publication Number Publication Date
TW200834240A TW200834240A (en) 2008-08-16
TWI359332B true TWI359332B (https=) 2012-03-01

Family

ID=39082098

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096130029A TW200834240A (en) 2006-08-15 2007-08-14 Positive photosensitive resin composition

Country Status (7)

Country Link
US (1) US7687208B2 (https=)
EP (1) EP2056163A4 (https=)
JP (1) JP5171628B2 (https=)
KR (1) KR101067302B1 (https=)
CN (1) CN101495919B (https=)
TW (1) TW200834240A (https=)
WO (1) WO2008020573A1 (https=)

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JP4929982B2 (ja) * 2006-10-30 2012-05-09 住友ベークライト株式会社 感光性樹脂組成物、絶縁膜、保護膜および電子機器
JP5241142B2 (ja) * 2007-05-29 2013-07-17 旭化成イーマテリアルズ株式会社 ポジ型感光性樹脂組成物
JP5061792B2 (ja) * 2007-08-21 2012-10-31 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置。
JP5029836B2 (ja) * 2008-03-19 2012-09-19 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
KR100914064B1 (ko) 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5167352B2 (ja) * 2008-05-13 2013-03-21 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP5079089B2 (ja) * 2008-05-29 2012-11-21 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置
KR101023089B1 (ko) 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100995079B1 (ko) * 2008-09-29 2010-11-18 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101015859B1 (ko) * 2008-10-07 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
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KR101015857B1 (ko) * 2008-10-07 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101015855B1 (ko) * 2008-10-17 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5410918B2 (ja) * 2008-10-20 2014-02-05 チェイル インダストリーズ インコーポレイテッド ポジティブ型感光性樹脂組成物
JP5421585B2 (ja) * 2008-12-24 2014-02-19 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
KR101333706B1 (ko) 2008-12-30 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333705B1 (ko) 2008-12-31 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
TWI437025B (zh) * 2009-08-14 2014-05-11 Asahi Kasei E Materials Corp An alkali-soluble polymer, a photosensitive resin composition comprising the same, and a use thereof
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP2011138116A (ja) * 2009-12-04 2011-07-14 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜並びにそれらの形成方法
KR101333692B1 (ko) * 2009-12-28 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5571431B2 (ja) * 2010-03-30 2014-08-13 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP2012073612A (ja) * 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) * 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
WO2013003698A2 (en) 2011-06-30 2013-01-03 Echo 360, Inc. Methods and apparatus for an embedded appliance
KR101413076B1 (ko) * 2011-12-23 2014-06-30 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
JP2014071373A (ja) * 2012-09-28 2014-04-21 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP6245180B2 (ja) * 2012-12-21 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
CN104870523B (zh) 2012-12-21 2017-10-31 日立化成杜邦微系统股份有限公司 聚酰亚胺前体、包含该聚酰亚胺前体的感光性树脂组合物、使用其的图案固化膜的制造方法和半导体装置
JP6116954B2 (ja) * 2013-03-22 2017-04-19 旭化成株式会社 感光性樹脂組成物及び硬化レリーフパターンの製造方法
KR20220167137A (ko) 2021-06-11 2022-12-20 한강희 포장 박스
KR20220167530A (ko) 2021-06-14 2022-12-21 한강희 포장 박스
JP7800342B2 (ja) * 2022-08-08 2026-01-16 信越化学工業株式会社 レジスト組成物及びパターン形成方法
CN116836389B (zh) * 2023-09-01 2024-01-26 明士(北京)新材料开发有限公司 一种可低温固化的正性光敏性树脂、树脂组合物、其制备方法及应用

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Also Published As

Publication number Publication date
US7687208B2 (en) 2010-03-30
EP2056163A1 (en) 2009-05-06
TW200834240A (en) 2008-08-16
CN101495919A (zh) 2009-07-29
KR101067302B1 (ko) 2011-09-23
CN101495919B (zh) 2015-05-06
WO2008020573A1 (en) 2008-02-21
KR20090016765A (ko) 2009-02-17
JPWO2008020573A1 (ja) 2010-01-07
JP5171628B2 (ja) 2013-03-27
US20090202794A1 (en) 2009-08-13
EP2056163A4 (en) 2009-11-11

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