JP5171628B2 - ポジ型感光性樹脂組成物 - Google Patents

ポジ型感光性樹脂組成物 Download PDF

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Publication number
JP5171628B2
JP5171628B2 JP2008529857A JP2008529857A JP5171628B2 JP 5171628 B2 JP5171628 B2 JP 5171628B2 JP 2008529857 A JP2008529857 A JP 2008529857A JP 2008529857 A JP2008529857 A JP 2008529857A JP 5171628 B2 JP5171628 B2 JP 5171628B2
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JP
Japan
Prior art keywords
acid
compound
carbon atoms
methyl
photosensitive resin
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Expired - Fee Related
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JP2008529857A
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Japanese (ja)
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JPWO2008020573A1 (ja
Inventor
智史 渋井
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Asahi Kasei Corp
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Asahi Kasei E Materials Corp
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Priority to JP2008529857A priority Critical patent/JP5171628B2/ja
Publication of JPWO2008020573A1 publication Critical patent/JPWO2008020573A1/ja
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polyamides (AREA)
JP2008529857A 2006-08-15 2007-08-10 ポジ型感光性樹脂組成物 Expired - Fee Related JP5171628B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008529857A JP5171628B2 (ja) 2006-08-15 2007-08-10 ポジ型感光性樹脂組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006221346 2006-08-15
JP2006221346 2006-08-15
PCT/JP2007/065729 WO2008020573A1 (en) 2006-08-15 2007-08-10 Positive photosensitive resin composition
JP2008529857A JP5171628B2 (ja) 2006-08-15 2007-08-10 ポジ型感光性樹脂組成物

Publications (2)

Publication Number Publication Date
JPWO2008020573A1 JPWO2008020573A1 (ja) 2010-01-07
JP5171628B2 true JP5171628B2 (ja) 2013-03-27

Family

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Family Applications (1)

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JP2008529857A Expired - Fee Related JP5171628B2 (ja) 2006-08-15 2007-08-10 ポジ型感光性樹脂組成物

Country Status (7)

Country Link
US (1) US7687208B2 (https=)
EP (1) EP2056163A4 (https=)
JP (1) JP5171628B2 (https=)
KR (1) KR101067302B1 (https=)
CN (1) CN101495919B (https=)
TW (1) TW200834240A (https=)
WO (1) WO2008020573A1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7803510B2 (en) * 2005-08-17 2010-09-28 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive polybenzoxazole precursor compositions
JP4929982B2 (ja) * 2006-10-30 2012-05-09 住友ベークライト株式会社 感光性樹脂組成物、絶縁膜、保護膜および電子機器
JP5241142B2 (ja) * 2007-05-29 2013-07-17 旭化成イーマテリアルズ株式会社 ポジ型感光性樹脂組成物
JP5061792B2 (ja) * 2007-08-21 2012-10-31 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置。
JP5029836B2 (ja) * 2008-03-19 2012-09-19 Jsr株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
KR100914064B1 (ko) 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5167352B2 (ja) * 2008-05-13 2013-03-21 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP5079089B2 (ja) * 2008-05-29 2012-11-21 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置
KR101023089B1 (ko) 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100995079B1 (ko) * 2008-09-29 2010-11-18 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101015859B1 (ko) * 2008-10-07 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2010041795A1 (en) * 2008-10-07 2010-04-15 Cheil Industries Inc. Positive photosensitive resin composition
KR101015857B1 (ko) * 2008-10-07 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101015855B1 (ko) * 2008-10-17 2011-02-23 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5410918B2 (ja) * 2008-10-20 2014-02-05 チェイル インダストリーズ インコーポレイテッド ポジティブ型感光性樹脂組成物
JP5421585B2 (ja) * 2008-12-24 2014-02-19 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
KR101333706B1 (ko) 2008-12-30 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333705B1 (ko) 2008-12-31 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
TWI437025B (zh) * 2009-08-14 2014-05-11 Asahi Kasei E Materials Corp An alkali-soluble polymer, a photosensitive resin composition comprising the same, and a use thereof
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP2011138116A (ja) * 2009-12-04 2011-07-14 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜並びにそれらの形成方法
KR101333692B1 (ko) * 2009-12-28 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5571431B2 (ja) * 2010-03-30 2014-08-13 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP2012073612A (ja) * 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) * 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
WO2013003698A2 (en) 2011-06-30 2013-01-03 Echo 360, Inc. Methods and apparatus for an embedded appliance
KR101413076B1 (ko) * 2011-12-23 2014-06-30 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
JP2014071373A (ja) * 2012-09-28 2014-04-21 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP6245180B2 (ja) * 2012-12-21 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
CN104870523B (zh) 2012-12-21 2017-10-31 日立化成杜邦微系统股份有限公司 聚酰亚胺前体、包含该聚酰亚胺前体的感光性树脂组合物、使用其的图案固化膜的制造方法和半导体装置
JP6116954B2 (ja) * 2013-03-22 2017-04-19 旭化成株式会社 感光性樹脂組成物及び硬化レリーフパターンの製造方法
KR20220167137A (ko) 2021-06-11 2022-12-20 한강희 포장 박스
KR20220167530A (ko) 2021-06-14 2022-12-21 한강희 포장 박스
JP7800342B2 (ja) * 2022-08-08 2026-01-16 信越化学工業株式会社 レジスト組成物及びパターン形成方法
CN116836389B (zh) * 2023-09-01 2024-01-26 明士(北京)新材料开发有限公司 一种可低温固化的正性光敏性树脂、树脂组合物、其制备方法及应用

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09138505A (ja) * 1995-11-14 1997-05-27 Mitsubishi Chem Corp フォトレジスト組成物
JP2000338664A (ja) * 1999-05-27 2000-12-08 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2001139806A (ja) * 1999-11-16 2001-05-22 Toray Ind Inc 耐熱性感光性樹脂組成物
JP2001343747A (ja) * 2000-03-30 2001-12-14 Nissan Chem Ind Ltd ポジ型感光性ポリイミド樹脂組成物
JP2003149816A (ja) * 2001-11-16 2003-05-21 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
JP2003345021A (ja) * 2002-05-27 2003-12-03 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性樹脂組成物、レリーフパターンの製造法及び電子部品
JP2004029712A (ja) * 2003-01-27 2004-01-29 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2004054254A (ja) * 2002-05-29 2004-02-19 Toray Ind Inc 感光性樹脂組成物および耐熱性樹脂膜の製造方法
JP2005157327A (ja) * 2003-10-28 2005-06-16 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物、該ポジ型感光性樹脂組成物を用いた半導体装置及び表示素子、並びに半導体装置及び表示素子の製造方法
JP2005250160A (ja) * 2004-03-04 2005-09-15 Kyocera Chemical Corp ポジ型感光性樹脂組成物及びその硬化物
JP2006178437A (ja) * 2004-11-24 2006-07-06 Toray Ind Inc 感光性樹脂組成物
WO2007049524A1 (ja) * 2005-10-26 2007-05-03 Asahi Kasei Emd Corporation ポジ型感光性樹脂組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE540225A (https=) 1954-08-20
NL95406C (https=) 1954-08-20
US3669658A (en) 1969-06-11 1972-06-13 Fuji Photo Film Co Ltd Photosensitive printing plate
US4009033A (en) 1975-09-22 1977-02-22 International Business Machines Corporation High speed positive photoresist composition
DE2931297A1 (de) 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
ATE67611T1 (de) 1986-10-02 1991-10-15 Hoechst Celanese Corp Polyamide mit hexafluorisopropyliden-gruppen, diese enthaltende positiv arbeitende lichtempfindliche gemische und damit hergestellte aufzeichnungsmaterialien.
JPS6446862A (en) 1987-08-18 1989-02-21 Fujitsu Ltd Bus controller
TW502135B (en) * 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
JP2000131845A (ja) 1998-10-22 2000-05-12 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物、およびそれを用いた半導体装置
JP2003345019A (ja) 2002-05-23 2003-12-03 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
JP2004212679A (ja) * 2002-12-27 2004-07-29 Kyocera Chemical Corp ポジ型感光性樹脂組成物およびパターン形成方法
EP1662319A3 (en) * 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
JP2008535003A (ja) * 2005-03-25 2008-08-28 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09138505A (ja) * 1995-11-14 1997-05-27 Mitsubishi Chem Corp フォトレジスト組成物
JP2000338664A (ja) * 1999-05-27 2000-12-08 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2001139806A (ja) * 1999-11-16 2001-05-22 Toray Ind Inc 耐熱性感光性樹脂組成物
JP2001343747A (ja) * 2000-03-30 2001-12-14 Nissan Chem Ind Ltd ポジ型感光性ポリイミド樹脂組成物
JP2003149816A (ja) * 2001-11-16 2003-05-21 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
JP2003345021A (ja) * 2002-05-27 2003-12-03 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性樹脂組成物、レリーフパターンの製造法及び電子部品
JP2004054254A (ja) * 2002-05-29 2004-02-19 Toray Ind Inc 感光性樹脂組成物および耐熱性樹脂膜の製造方法
JP2004029712A (ja) * 2003-01-27 2004-01-29 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2005157327A (ja) * 2003-10-28 2005-06-16 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物、該ポジ型感光性樹脂組成物を用いた半導体装置及び表示素子、並びに半導体装置及び表示素子の製造方法
JP2005250160A (ja) * 2004-03-04 2005-09-15 Kyocera Chemical Corp ポジ型感光性樹脂組成物及びその硬化物
JP2006178437A (ja) * 2004-11-24 2006-07-06 Toray Ind Inc 感光性樹脂組成物
WO2007049524A1 (ja) * 2005-10-26 2007-05-03 Asahi Kasei Emd Corporation ポジ型感光性樹脂組成物

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