KR100995520B1 - 반도체/유전체 계면에서 결정 영역을 갖는 비정질 산화물전계효과형 트랜지스터 - Google Patents

반도체/유전체 계면에서 결정 영역을 갖는 비정질 산화물전계효과형 트랜지스터 Download PDF

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KR100995520B1
KR100995520B1 KR1020087013298A KR20087013298A KR100995520B1 KR 100995520 B1 KR100995520 B1 KR 100995520B1 KR 1020087013298 A KR1020087013298 A KR 1020087013298A KR 20087013298 A KR20087013298 A KR 20087013298A KR 100995520 B1 KR100995520 B1 KR 100995520B1
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amorphous oxide
field effect
interface
region
active layer
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KR20080074931A (ko
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토시아키 아이바
마사후미 사노
노부유키 카지
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
KR1020087013298A 2005-11-08 2006-11-01 반도체/유전체 계면에서 결정 영역을 갖는 비정질 산화물전계효과형 트랜지스터 Expired - Fee Related KR100995520B1 (ko)

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JPJP-P-2005-00323689 2005-11-08
JP2005323689 2005-11-08
JPJP-P-2006-00283893 2006-10-18
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ

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KR100995520B1 true KR100995520B1 (ko) 2010-11-22

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EP (1) EP1946383A1 (enExample)
JP (1) JP4560505B2 (enExample)
KR (1) KR100995520B1 (enExample)
CN (1) CN101305468B (enExample)
BR (1) BRPI0618329A2 (enExample)
RU (1) RU2390072C2 (enExample)
TW (1) TWI328288B (enExample)
WO (1) WO2007055256A1 (enExample)

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KR101800854B1 (ko) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
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CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101773641B1 (ko) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8416622B2 (en) * 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
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BRPI0618329A2 (pt) 2012-05-08
KR20080074931A (ko) 2008-08-13
US7851792B2 (en) 2010-12-14
JP4560505B2 (ja) 2010-10-13
CN101305468A (zh) 2008-11-12
TWI328288B (en) 2010-08-01
JP2007158307A (ja) 2007-06-21
WO2007055256A1 (en) 2007-05-18
CN101305468B (zh) 2011-01-05
TW200737525A (en) 2007-10-01
US20090272970A1 (en) 2009-11-05
RU2008122971A (ru) 2009-12-20
RU2390072C2 (ru) 2010-05-20
EP1946383A1 (en) 2008-07-23

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