RU2390072C2 - Полевой транзистор - Google Patents

Полевой транзистор Download PDF

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Publication number
RU2390072C2
RU2390072C2 RU2008122971/28A RU2008122971A RU2390072C2 RU 2390072 C2 RU2390072 C2 RU 2390072C2 RU 2008122971/28 A RU2008122971/28 A RU 2008122971/28A RU 2008122971 A RU2008122971 A RU 2008122971A RU 2390072 C2 RU2390072 C2 RU 2390072C2
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RU
Russia
Prior art keywords
interface
film
active layer
layer
crystalline region
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Application number
RU2008122971/28A
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English (en)
Russian (ru)
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RU2008122971A (ru
Inventor
Тосиаки АИБА (JP)
Тосиаки АИБА
Масафуми САНО (JP)
Масафуми САНО
Нобуюки КАДЗИ (JP)
Нобуюки КАДЗИ
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Кэнон Кабусики Кайся
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Application filed by Кэнон Кабусики Кайся filed Critical Кэнон Кабусики Кайся
Publication of RU2008122971A publication Critical patent/RU2008122971A/ru
Application granted granted Critical
Publication of RU2390072C2 publication Critical patent/RU2390072C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
RU2008122971/28A 2005-11-08 2006-11-01 Полевой транзистор RU2390072C2 (ru)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005-323689 2005-11-08
JP2005323689 2005-11-08
JP2006-283893 2006-10-18
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
RU2008122971A RU2008122971A (ru) 2009-12-20
RU2390072C2 true RU2390072C2 (ru) 2010-05-20

Family

ID=37607109

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2008122971/28A RU2390072C2 (ru) 2005-11-08 2006-11-01 Полевой транзистор

Country Status (9)

Country Link
US (1) US7851792B2 (enExample)
EP (1) EP1946383A1 (enExample)
JP (1) JP4560505B2 (enExample)
KR (1) KR100995520B1 (enExample)
CN (1) CN101305468B (enExample)
BR (1) BRPI0618329A2 (enExample)
RU (1) RU2390072C2 (enExample)
TW (1) TWI328288B (enExample)
WO (1) WO2007055256A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU168641U1 (ru) * 2016-01-26 2017-02-13 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом
RU2706296C1 (ru) * 2016-03-18 2019-11-15 Рикох Компани, Лтд. Способ изготовления полевого транзистора

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RU2402106C2 (ru) 2004-11-10 2010-10-20 Кэнон Кабусики Кайся Аморфный оксид и полевой транзистор с его использованием
JP5305630B2 (ja) 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
JP5354862B2 (ja) * 2007-02-19 2013-11-27 キヤノン株式会社 アモルファス絶縁体膜及び薄膜トランジスタ
KR101252904B1 (ko) 2007-09-06 2013-04-09 캐논 가부시끼가이샤 리튬 이온 축적·방출 재료의 제조 방법, 리튬 이온 축적·방출 재료 및 상기 재료를 사용한 전극 구조체 및 축전 디바이스
JP5213421B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 酸化物半導体薄膜トランジスタ
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
WO2010038596A1 (en) * 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
TWI502739B (zh) * 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
CN105428424A (zh) * 2009-09-16 2016-03-23 株式会社半导体能源研究所 晶体管及显示设备
TWI512997B (zh) * 2009-09-24 2015-12-11 半導體能源研究所股份有限公司 半導體裝置，電源電路，和半導體裝置的製造方法
EP3249698A1 (en) * 2009-10-08 2017-11-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
WO2011043170A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102148664B1 (ko) 2009-11-06 2020-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101893332B1 (ko) 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101800852B1 (ko) * 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101693914B1 (ko) 2009-11-20 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
CN105739209B (zh) * 2009-11-30 2022-05-27 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法
CN102648526B (zh) 2009-12-04 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5923248B2 (ja) * 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
US8987728B2 (en) * 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
JP6006572B2 (ja) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
CN103843145B (zh) 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
US9057126B2 (en) * 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US20150329371A1 (en) * 2014-05-13 2015-11-19 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU168641U1 (ru) * 2016-01-26 2017-02-13 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом
RU2706296C1 (ru) * 2016-03-18 2019-11-15 Рикох Компани, Лтд. Способ изготовления полевого транзистора
US10586873B2 (en) 2016-03-18 2020-03-10 Ricoh Company, Ltd. Method for producing field-effect transistor

Also Published As

Publication number Publication date
CN101305468B (zh) 2011-01-05
KR100995520B1 (ko) 2010-11-22
US7851792B2 (en) 2010-12-14
JP4560505B2 (ja) 2010-10-13
WO2007055256A1 (en) 2007-05-18
TW200737525A (en) 2007-10-01
JP2007158307A (ja) 2007-06-21
US20090272970A1 (en) 2009-11-05
TWI328288B (en) 2010-08-01
KR20080074931A (ko) 2008-08-13
CN101305468A (zh) 2008-11-12
RU2008122971A (ru) 2009-12-20
BRPI0618329A2 (pt) 2012-05-08
EP1946383A1 (en) 2008-07-23

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Effective date: 20171102