RU2390072C2 - Полевой транзистор - Google Patents

Полевой транзистор Download PDF

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Publication number
RU2390072C2
RU2390072C2 RU2008122971/28A RU2008122971A RU2390072C2 RU 2390072 C2 RU2390072 C2 RU 2390072C2 RU 2008122971/28 A RU2008122971/28 A RU 2008122971/28A RU 2008122971 A RU2008122971 A RU 2008122971A RU 2390072 C2 RU2390072 C2 RU 2390072C2
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RU
Russia
Prior art keywords
interface
film
active layer
layer
crystalline region
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RU2008122971/28A
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English (en)
Russian (ru)
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RU2008122971A (ru
Inventor
Тосиаки АИБА (JP)
Тосиаки АИБА
Масафуми САНО (JP)
Масафуми САНО
Нобуюки КАДЗИ (JP)
Нобуюки КАДЗИ
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Кэнон Кабусики Кайся
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Application filed by Кэнон Кабусики Кайся filed Critical Кэнон Кабусики Кайся
Publication of RU2008122971A publication Critical patent/RU2008122971A/ru
Application granted granted Critical
Publication of RU2390072C2 publication Critical patent/RU2390072C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
RU2008122971/28A 2005-11-08 2006-11-01 Полевой транзистор RU2390072C2 (ru)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005323689 2005-11-08
JP2005-323689 2005-11-08
JP2006-283893 2006-10-18
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
RU2008122971A RU2008122971A (ru) 2009-12-20
RU2390072C2 true RU2390072C2 (ru) 2010-05-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2008122971/28A RU2390072C2 (ru) 2005-11-08 2006-11-01 Полевой транзистор

Country Status (9)

Country Link
US (1) US7851792B2 (enExample)
EP (1) EP1946383A1 (enExample)
JP (1) JP4560505B2 (enExample)
KR (1) KR100995520B1 (enExample)
CN (1) CN101305468B (enExample)
BR (1) BRPI0618329A2 (enExample)
RU (1) RU2390072C2 (enExample)
TW (1) TWI328288B (enExample)
WO (1) WO2007055256A1 (enExample)

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RU168641U1 (ru) * 2016-01-26 2017-02-13 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом
RU2706296C1 (ru) * 2016-03-18 2019-11-15 Рикох Компани, Лтд. Способ изготовления полевого транзистора

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CN101849306B (zh) 2007-09-06 2013-06-12 佳能株式会社 锂离子储存/释放材料的制备方法、锂离子储存/释放材料、使用该材料的电极结构体和储能器件
JP5213421B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 酸化物半導体薄膜トランジスタ
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
WO2010038596A1 (en) * 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
TWI656645B (zh) * 2008-11-13 2019-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2010153802A (ja) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
CN105448937A (zh) * 2009-09-16 2016-03-30 株式会社半导体能源研究所 晶体管及显示设备
TWI512997B (zh) * 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
KR101980505B1 (ko) * 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101396096B1 (ko) * 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102612714B (zh) 2009-11-13 2016-06-29 株式会社半导体能源研究所 半导体器件及其驱动方法
KR101708607B1 (ko) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011062057A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011065230A1 (en) 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8416622B2 (en) * 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8987728B2 (en) * 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
JP6006572B2 (ja) * 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
CN103843145B (zh) 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
US9057126B2 (en) * 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US20150329371A1 (en) * 2014-05-13 2015-11-19 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU168641U1 (ru) * 2016-01-26 2017-02-13 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом
RU2706296C1 (ru) * 2016-03-18 2019-11-15 Рикох Компани, Лтд. Способ изготовления полевого транзистора
US10586873B2 (en) 2016-03-18 2020-03-10 Ricoh Company, Ltd. Method for producing field-effect transistor

Also Published As

Publication number Publication date
KR100995520B1 (ko) 2010-11-22
WO2007055256A1 (en) 2007-05-18
US7851792B2 (en) 2010-12-14
RU2008122971A (ru) 2009-12-20
US20090272970A1 (en) 2009-11-05
TW200737525A (en) 2007-10-01
BRPI0618329A2 (pt) 2012-05-08
TWI328288B (en) 2010-08-01
JP2007158307A (ja) 2007-06-21
JP4560505B2 (ja) 2010-10-13
CN101305468A (zh) 2008-11-12
EP1946383A1 (en) 2008-07-23
KR20080074931A (ko) 2008-08-13
CN101305468B (zh) 2011-01-05

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Effective date: 20171102