CN101305468B - 在半导体/电介质界面处具有晶体区域的非晶氧化物场效应晶体管 - Google Patents

在半导体/电介质界面处具有晶体区域的非晶氧化物场效应晶体管 Download PDF

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Publication number
CN101305468B
CN101305468B CN2006800415569A CN200680041556A CN101305468B CN 101305468 B CN101305468 B CN 101305468B CN 2006800415569 A CN2006800415569 A CN 2006800415569A CN 200680041556 A CN200680041556 A CN 200680041556A CN 101305468 B CN101305468 B CN 101305468B
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amorphous oxide
interface
amorphous
region
film
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CN101305468A (zh
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饗场利明
佐野政史
加地信幸
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
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CN2006800415569A 2005-11-08 2006-11-01 在半导体/电介质界面处具有晶体区域的非晶氧化物场效应晶体管 Expired - Fee Related CN101305468B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005323689 2005-11-08
JP323689/2005 2005-11-08
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ
JP283893/2006 2006-10-18
PCT/JP2006/322327 WO2007055256A1 (en) 2005-11-08 2006-11-01 Amorphous oxide field-effect transistor having crystalline region at the semiconductor/dielectric interface

Publications (2)

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CN101305468A CN101305468A (zh) 2008-11-12
CN101305468B true CN101305468B (zh) 2011-01-05

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US (1) US7851792B2 (enExample)
EP (1) EP1946383A1 (enExample)
JP (1) JP4560505B2 (enExample)
KR (1) KR100995520B1 (enExample)
CN (1) CN101305468B (enExample)
BR (1) BRPI0618329A2 (enExample)
RU (1) RU2390072C2 (enExample)
TW (1) TWI328288B (enExample)
WO (1) WO2007055256A1 (enExample)

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CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101773641B1 (ko) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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Publication number Publication date
BRPI0618329A2 (pt) 2012-05-08
KR20080074931A (ko) 2008-08-13
US7851792B2 (en) 2010-12-14
JP4560505B2 (ja) 2010-10-13
CN101305468A (zh) 2008-11-12
TWI328288B (en) 2010-08-01
JP2007158307A (ja) 2007-06-21
WO2007055256A1 (en) 2007-05-18
TW200737525A (en) 2007-10-01
US20090272970A1 (en) 2009-11-05
RU2008122971A (ru) 2009-12-20
RU2390072C2 (ru) 2010-05-20
KR100995520B1 (ko) 2010-11-22
EP1946383A1 (en) 2008-07-23

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