JP4560505B2 - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ Download PDF

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Publication number
JP4560505B2
JP4560505B2 JP2006283893A JP2006283893A JP4560505B2 JP 4560505 B2 JP4560505 B2 JP 4560505B2 JP 2006283893 A JP2006283893 A JP 2006283893A JP 2006283893 A JP2006283893 A JP 2006283893A JP 4560505 B2 JP4560505 B2 JP 4560505B2
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JP
Japan
Prior art keywords
interface
amorphous oxide
active layer
field effect
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006283893A
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English (en)
Japanese (ja)
Other versions
JP2007158307A (ja
JP2007158307A5 (enExample
Inventor
利明 饗場
信幸 加地
政史 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006283893A priority Critical patent/JP4560505B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to BRPI0618329-8A priority patent/BRPI0618329A2/pt
Priority to PCT/JP2006/322327 priority patent/WO2007055256A1/en
Priority to EP06823223A priority patent/EP1946383A1/en
Priority to US12/089,907 priority patent/US7851792B2/en
Priority to CN2006800415569A priority patent/CN101305468B/zh
Priority to RU2008122971/28A priority patent/RU2390072C2/ru
Priority to KR1020087013298A priority patent/KR100995520B1/ko
Priority to TW095140809A priority patent/TWI328288B/zh
Publication of JP2007158307A publication Critical patent/JP2007158307A/ja
Publication of JP2007158307A5 publication Critical patent/JP2007158307A5/ja
Application granted granted Critical
Publication of JP4560505B2 publication Critical patent/JP4560505B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2006283893A 2005-11-08 2006-10-18 電界効果型トランジスタ Expired - Fee Related JP4560505B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ
KR1020087013298A KR100995520B1 (ko) 2005-11-08 2006-11-01 반도체/유전체 계면에서 결정 영역을 갖는 비정질 산화물전계효과형 트랜지스터
EP06823223A EP1946383A1 (en) 2005-11-08 2006-11-01 Amorphous oxide field-effect transistor having crystalline region at the semiconductor/dielectric interface
US12/089,907 US7851792B2 (en) 2005-11-08 2006-11-01 Field-effect transistor
CN2006800415569A CN101305468B (zh) 2005-11-08 2006-11-01 在半导体/电介质界面处具有晶体区域的非晶氧化物场效应晶体管
RU2008122971/28A RU2390072C2 (ru) 2005-11-08 2006-11-01 Полевой транзистор
BRPI0618329-8A BRPI0618329A2 (pt) 2005-11-08 2006-11-01 transistor de efeito de campo
PCT/JP2006/322327 WO2007055256A1 (en) 2005-11-08 2006-11-01 Amorphous oxide field-effect transistor having crystalline region at the semiconductor/dielectric interface
TW095140809A TWI328288B (en) 2005-11-08 2006-11-03 Field-effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005323689 2005-11-08
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ

Publications (3)

Publication Number Publication Date
JP2007158307A JP2007158307A (ja) 2007-06-21
JP2007158307A5 JP2007158307A5 (enExample) 2009-12-03
JP4560505B2 true JP4560505B2 (ja) 2010-10-13

Family

ID=37607109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006283893A Expired - Fee Related JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ

Country Status (9)

Country Link
US (1) US7851792B2 (enExample)
EP (1) EP1946383A1 (enExample)
JP (1) JP4560505B2 (enExample)
KR (1) KR100995520B1 (enExample)
CN (1) CN101305468B (enExample)
BR (1) BRPI0618329A2 (enExample)
RU (1) RU2390072C2 (enExample)
TW (1) TWI328288B (enExample)
WO (1) WO2007055256A1 (enExample)

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JP5354862B2 (ja) * 2007-02-19 2013-11-27 キヤノン株式会社 アモルファス絶縁体膜及び薄膜トランジスタ
CN101849306B (zh) 2007-09-06 2013-06-12 佳能株式会社 锂离子储存/释放材料的制备方法、锂离子储存/释放材料、使用该材料的电极结构体和储能器件
JP5213421B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 酸化物半導体薄膜トランジスタ
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
WO2010038596A1 (en) * 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
TWI656645B (zh) * 2008-11-13 2019-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2010153802A (ja) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
CN105448937A (zh) * 2009-09-16 2016-03-30 株式会社半导体能源研究所 晶体管及显示设备
TWI512997B (zh) * 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
KR101980505B1 (ko) * 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101396096B1 (ko) * 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102612714B (zh) 2009-11-13 2016-06-29 株式会社半导体能源研究所 半导体器件及其驱动方法
KR101708607B1 (ko) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011062057A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011065230A1 (en) 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8416622B2 (en) * 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8987728B2 (en) * 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
JP6006572B2 (ja) * 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
CN103843145B (zh) 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
US9057126B2 (en) * 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US20150329371A1 (en) * 2014-05-13 2015-11-19 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
RU168641U1 (ru) * 2016-01-26 2017-02-13 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом
SG11201807957SA (en) 2016-03-18 2018-10-30 Ricoh Co Ltd Method for manufacturing a field effect transistor

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KR101019337B1 (ko) * 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
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JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置

Also Published As

Publication number Publication date
KR100995520B1 (ko) 2010-11-22
WO2007055256A1 (en) 2007-05-18
US7851792B2 (en) 2010-12-14
RU2008122971A (ru) 2009-12-20
US20090272970A1 (en) 2009-11-05
TW200737525A (en) 2007-10-01
BRPI0618329A2 (pt) 2012-05-08
TWI328288B (en) 2010-08-01
JP2007158307A (ja) 2007-06-21
CN101305468A (zh) 2008-11-12
EP1946383A1 (en) 2008-07-23
RU2390072C2 (ru) 2010-05-20
KR20080074931A (ko) 2008-08-13
CN101305468B (zh) 2011-01-05

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