JP5852307B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP5852307B2 JP5852307B2 JP2010279521A JP2010279521A JP5852307B2 JP 5852307 B2 JP5852307 B2 JP 5852307B2 JP 2010279521 A JP2010279521 A JP 2010279521A JP 2010279521 A JP2010279521 A JP 2010279521A JP 5852307 B2 JP5852307 B2 JP 5852307B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- concentration
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000010409 thin film Substances 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 199
- 239000010408 film Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 25
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 217
- 239000011701 zinc Substances 0.000 description 112
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 9
- 229910001887 tin oxide Inorganic materials 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004140 HfO Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010048334 Mobility decreased Diseases 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
ガラス基板上にMoで、1000Å厚さかつ幅/長さ150/1000nmのゲート電極を形成した後、基板及びゲート電極上にSiNx/SiOxを400/800Å厚さに形成して(例えば、SiNxを400Å積層し、その上に、SiOxを800Å積層し)、ゲート絶縁膜を形成した。そして、ゲート絶縁膜上にHfInZnO系酸化物半導体層を300〜500Å厚さに形成した。ここで、0<x≦2となる。
11 基板
13 ゲート電極
15 ゲート絶縁膜
17 酸化物半導体層
19 ソース/ドレイン
Claims (16)
- 基板と、
前記基板上に設けられたゲート電極と、
前記ゲート電極及び露出された前記基板上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上の前記ゲート電極に対向する位置に設けられ、Znの濃度勾配を持つHfInZnO系酸化物半導体からなる酸化物半導体層と、
前記酸化物半導体層の両側から前記ゲート絶縁膜上に延びるソース及びドレインと、を備えることを特徴とする、薄膜トランジスタ。 - 前記酸化物半導体層の下端面からの距離が長くなるほど、Znの濃度が高くなることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記酸化物半導体層内の前記Znの濃度は、30〜70atom%(原子百分率)(Hf、In、Znのatom%の和は100)の範囲を持つことを特徴とする、請求項1または2に記載の薄膜トランジスタ。
- 前記酸化物半導体層中のHfの濃度は2〜13atom%の範囲を持つことを特徴とする、請求項1〜3のいずれか1項に記載の薄膜トランジスタ。
- 前記酸化物半導体層は非晶質であることを特徴とする、請求項1〜4のいずれか1項に記載の薄膜トランジスタ。
- 前記酸化物半導体層は結晶質であることを特徴とする、請求項1〜4のいずれか1項に記載の薄膜トランジスタ。
- 前記基板と前記ゲート電極との間にバッファ層をさらに備えることを特徴とする、請求項1〜6のいずれか1項に記載の薄膜トランジスタ。
- 前記酸化物半導体層上にエッチング停止膜をさらに備えることを特徴とする、請求項1〜7のいずれか1項に記載の薄膜トランジスタ。
- 基板上にゲート電極を形成する工程と、
前記ゲート電極及び露出された前記基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上の前記ゲート電極に対向する位置に、Znの濃度勾配を持つHfInZnO系の酸化物半導体層を形成する工程と、
前記酸化物半導体層の両側から前記ゲート絶縁膜上に延びるソース及びドレインを形成する工程と、を含むことを特徴とする、薄膜トランジスタの製造方法。 - 前記酸化物半導体層を形成する工程は、HfO2、In2O3、ZnOの3つのターゲットにそれぞれパワーを印加するコスパッタリングを含むことを特徴とする、請求項9に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層の下端面からの距離が長くなるほど、Znの濃度が高くなるように前記酸化物半導体層を形成することを特徴とする、請求項9または10に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層中の前記Znの濃度が30〜70atom%の範囲を持つように前記酸化物半導体層を形成することを特徴とする、請求項9〜11のいずれか1項に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層を非晶質状態に形成することを特徴とする、請求項9〜12のいずれか1項に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層を結晶状態に形成することを特徴とする、請求項9〜12のいずれか1項に記載の薄膜トランジスタの製造方法。
- 前記基板と前記ゲート電極との間にバッファ層を形成する工程をさらに含むことを特徴とする、請求項9〜14のいずれか1項に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層上にエッチング停止膜を形成する工程をさらに含むことを特徴とする、請求項9〜15のいずれか1項に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090125032A KR101035357B1 (ko) | 2009-12-15 | 2009-12-15 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
KR10-2009-0125032 | 2009-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011129926A JP2011129926A (ja) | 2011-06-30 |
JP5852307B2 true JP5852307B2 (ja) | 2016-02-03 |
Family
ID=44130458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010279521A Active JP5852307B2 (ja) | 2009-12-15 | 2010-12-15 | 薄膜トランジスタ及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8319217B2 (ja) |
JP (1) | JP5852307B2 (ja) |
KR (1) | KR101035357B1 (ja) |
CN (1) | CN102097487B (ja) |
TW (1) | TWI559553B (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101701208B1 (ko) * | 2010-01-15 | 2017-02-02 | 삼성디스플레이 주식회사 | 표시 기판 |
KR101117737B1 (ko) * | 2010-03-02 | 2012-02-24 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101700882B1 (ko) * | 2010-05-20 | 2017-02-01 | 삼성디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 |
KR101713994B1 (ko) * | 2010-12-29 | 2017-03-09 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
KR20120084940A (ko) * | 2011-01-21 | 2012-07-31 | 서울대학교산학협력단 | 박막 트랜지스터 및 그 제조 방법 |
JP6053098B2 (ja) * | 2011-03-28 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5977569B2 (ja) * | 2011-04-22 | 2016-08-24 | 株式会社神戸製鋼所 | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 |
CN102208453A (zh) * | 2011-06-02 | 2011-10-05 | 上海大学 | 基于氧化物薄膜晶体管阵列制备的复合叠层电极 |
EP2720441A4 (en) | 2011-06-10 | 2015-02-18 | Nec Casio Mobile Comm Ltd | PORTABLE DEVICE, CONTROL PROCEDURE AND PROGRAM |
WO2012172746A1 (en) | 2011-06-17 | 2012-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9214474B2 (en) * | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP4982620B1 (ja) * | 2011-07-29 | 2012-07-25 | 富士フイルム株式会社 | 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びx線センサ |
JP6226518B2 (ja) | 2011-10-24 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN102403363A (zh) * | 2011-10-27 | 2012-04-04 | 华南理工大学 | 双层氧化物薄膜晶体管及其制备方法 |
US8962386B2 (en) | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102072244B1 (ko) | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR101901251B1 (ko) * | 2011-12-27 | 2018-09-27 | 엘지디스플레이 주식회사 | 산화물 반도체 박막트랜지스터 및 그의 제조 방법 |
CN202443973U (zh) | 2012-02-28 | 2012-09-19 | 北京京东方光电科技有限公司 | 氧化物半导体薄膜晶体管与显示装置 |
US9153699B2 (en) * | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9190525B2 (en) * | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
KR102243843B1 (ko) | 2012-08-03 | 2021-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체 적층막 및 반도체 장치 |
JP6134230B2 (ja) * | 2012-08-31 | 2017-05-24 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
JP5966840B2 (ja) * | 2012-10-11 | 2016-08-10 | 住友金属鉱山株式会社 | 酸化物半導体薄膜および薄膜トランジスタ |
KR102227591B1 (ko) | 2012-10-17 | 2021-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9178042B2 (en) * | 2013-01-08 | 2015-11-03 | Globalfoundries Inc | Crystalline thin-film transistor |
US9171960B2 (en) | 2013-01-25 | 2015-10-27 | Qualcomm Mems Technologies, Inc. | Metal oxide layer composition control by atomic layer deposition for thin film transistor |
DE102014208859B4 (de) * | 2013-05-20 | 2021-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
US9691906B2 (en) | 2013-10-24 | 2017-06-27 | Joled Inc. | Method for producing thin film transistor |
US10741696B2 (en) | 2016-09-27 | 2020-08-11 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
TWI720263B (zh) * | 2017-10-30 | 2021-03-01 | 聯華電子股份有限公司 | 電晶體結構以及其製造方法 |
JP2019091794A (ja) * | 2017-11-14 | 2019-06-13 | シャープ株式会社 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100491144B1 (ko) * | 2001-12-26 | 2005-05-24 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
KR100998527B1 (ko) * | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
KR101312259B1 (ko) * | 2007-02-09 | 2013-09-25 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP5121254B2 (ja) | 2007-02-28 | 2013-01-16 | キヤノン株式会社 | 薄膜トランジスタおよび表示装置 |
JP4727684B2 (ja) * | 2007-03-27 | 2011-07-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
KR101345376B1 (ko) * | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US7935964B2 (en) * | 2007-06-19 | 2011-05-03 | Samsung Electronics Co., Ltd. | Oxide semiconductors and thin film transistors comprising the same |
CN101911303B (zh) * | 2007-12-25 | 2013-03-27 | 出光兴产株式会社 | 氧化物半导体场效应晶体管及其制造方法 |
KR101468591B1 (ko) * | 2008-05-29 | 2014-12-04 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
KR101468594B1 (ko) * | 2008-07-31 | 2014-12-04 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
WO2010110571A2 (en) * | 2009-03-23 | 2010-09-30 | Samsung Electronics Co., Ltd. | Oxide semiconductor and thin film transistor including the same |
KR101638977B1 (ko) * | 2009-11-13 | 2016-07-12 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
-
2009
- 2009-12-15 KR KR1020090125032A patent/KR101035357B1/ko active IP Right Grant
-
2010
- 2010-08-31 US US12/873,199 patent/US8319217B2/en active Active
- 2010-10-12 TW TW099134695A patent/TWI559553B/zh active
- 2010-10-20 CN CN201010518685.0A patent/CN102097487B/zh active Active
- 2010-12-15 JP JP2010279521A patent/JP5852307B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN102097487A (zh) | 2011-06-15 |
JP2011129926A (ja) | 2011-06-30 |
US8319217B2 (en) | 2012-11-27 |
CN102097487B (zh) | 2015-02-18 |
KR101035357B1 (ko) | 2011-05-20 |
TWI559553B (zh) | 2016-11-21 |
TW201133862A (en) | 2011-10-01 |
US20110140095A1 (en) | 2011-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5852307B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
JP5400019B2 (ja) | 薄膜トランジスタ、その製造方法及び薄膜トランジスタを具備した有機電界発光装置 | |
JP5640478B2 (ja) | 電界効果型トランジスタの製造方法及び電界効果型トランジスタ | |
JP6043244B2 (ja) | 薄膜トランジスタ | |
JP6002088B2 (ja) | 薄膜トランジスタ | |
JP5322530B2 (ja) | 薄膜電界効果型トランジスタの製造方法及び該製造方法によって製造された薄膜電界効果型トランジスタ | |
US20180315858A1 (en) | Thin-film transistor, method of fabricating thin-film transistor, and display device | |
JP5339792B2 (ja) | 薄膜電界効果型トランジスタ、その製造方法、およびそれを用いた表示装置 | |
JP2009231664A (ja) | 電界効果トランジスタ及びその製造方法 | |
US9893193B2 (en) | Thin-film transistor including a gate electrode with a side wall insulating layer and display device | |
JP2013239521A (ja) | 電界効果型トランジスタの製造方法 | |
TWI497689B (zh) | 半導體元件及其製造方法 | |
JP2012028481A (ja) | 電界効果型トランジスタ及びその製造方法 | |
TWI640098B (zh) | 半導體裝置及半導體裝置之製造方法 | |
JP2011258804A (ja) | 電界効果型トランジスタ及びその製造方法 | |
TWI767186B (zh) | 氧化物半導體薄膜、薄膜電晶體及濺鍍靶 | |
CN118039702A (zh) | 一种顶栅肖特基氧化物薄膜晶体管及制备方法 | |
KR20170025248A (ko) | 이중층 게이트 절연막을 포함하는 박막 트랜지스터 및 이의 제조방법 | |
JP2010073880A (ja) | 薄膜電界効果型トランジスタ及びその製造方法 | |
KR20180061751A (ko) | 표시 장치 및 그 제조 방법 | |
KR20140071491A (ko) | 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 반도체 장치 | |
JP5489429B2 (ja) | 薄膜電界効果型トランジスタ | |
JP2019140318A (ja) | 薄膜トランジスタおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120921 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131129 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141104 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151007 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20151014 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5852307 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |