RU2008122971A - Полевой транзистор - Google Patents

Полевой транзистор Download PDF

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Publication number
RU2008122971A
RU2008122971A RU2008122971/28A RU2008122971A RU2008122971A RU 2008122971 A RU2008122971 A RU 2008122971A RU 2008122971/28 A RU2008122971/28 A RU 2008122971/28A RU 2008122971 A RU2008122971 A RU 2008122971A RU 2008122971 A RU2008122971 A RU 2008122971A
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RU
Russia
Prior art keywords
effect transistor
oxide layer
interface
amorphous oxide
field effect
Prior art date
Application number
RU2008122971/28A
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English (en)
Other versions
RU2390072C2 (ru
Inventor
Тосиаки АИБА (JP)
Тосиаки АИБА
Масафуми САНО (JP)
Масафуми САНО
Нобуюки КАДЗИ (JP)
Нобуюки КАДЗИ
Original Assignee
Кэнон Кабусики Кайся (Jp)
Кэнон Кабусики Кайся
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Кэнон Кабусики Кайся (Jp), Кэнон Кабусики Кайся filed Critical Кэнон Кабусики Кайся (Jp)
Publication of RU2008122971A publication Critical patent/RU2008122971A/ru
Application granted granted Critical
Publication of RU2390072C2 publication Critical patent/RU2390072C2/ru

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)

Abstract

1. Полевой транзистор, содержащий: ! активный слой, и ! изолирующую затвор пленку, ! причем активный слой содержит слой аморфного оксида, содержащий аморфную область и кристаллическую область, и кристаллическая область находится вблизи от или в контакте с поверхностью раздела между слоем аморфного оксида и изолирующей затвор пленкой. ! 2. Полевой транзистор по п.1, в котором кристаллическая область отсутствует вблизи от второй поверхности раздела, противоположной первой поверхности раздела, которая является поверхностью раздела между слоем аморфного оксида и изолирующей затвор пленкой. ! 3. Полевой транзистор по п.1, в котором слой аморфного оксида состоит из оксида, содержащего In, Zn и Ga. ! 4. Полевой транзистор по п.1, в котором слой аморфного оксида имеет толщину 0,05 мкм или более и 1 мкм или менее.

Claims (4)

1. Полевой транзистор, содержащий:
активный слой, и
изолирующую затвор пленку,
причем активный слой содержит слой аморфного оксида, содержащий аморфную область и кристаллическую область, и кристаллическая область находится вблизи от или в контакте с поверхностью раздела между слоем аморфного оксида и изолирующей затвор пленкой.
2. Полевой транзистор по п.1, в котором кристаллическая область отсутствует вблизи от второй поверхности раздела, противоположной первой поверхности раздела, которая является поверхностью раздела между слоем аморфного оксида и изолирующей затвор пленкой.
3. Полевой транзистор по п.1, в котором слой аморфного оксида состоит из оксида, содержащего In, Zn и Ga.
4. Полевой транзистор по п.1, в котором слой аморфного оксида имеет толщину 0,05 мкм или более и 1 мкм или менее.
RU2008122971/28A 2005-11-08 2006-11-01 Полевой транзистор RU2390072C2 (ru)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005323689 2005-11-08
JP2005-323689 2005-11-08
JP2006283893A JP4560505B2 (ja) 2005-11-08 2006-10-18 電界効果型トランジスタ
JP2006-283893 2006-10-18

Publications (2)

Publication Number Publication Date
RU2008122971A true RU2008122971A (ru) 2009-12-20
RU2390072C2 RU2390072C2 (ru) 2010-05-20

Family

ID=37607109

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2008122971/28A RU2390072C2 (ru) 2005-11-08 2006-11-01 Полевой транзистор

Country Status (9)

Country Link
US (1) US7851792B2 (ru)
EP (1) EP1946383A1 (ru)
JP (1) JP4560505B2 (ru)
KR (1) KR100995520B1 (ru)
CN (1) CN101305468B (ru)
BR (1) BRPI0618329A2 (ru)
RU (1) RU2390072C2 (ru)
TW (1) TWI328288B (ru)
WO (1) WO2007055256A1 (ru)

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Also Published As

Publication number Publication date
CN101305468B (zh) 2011-01-05
US7851792B2 (en) 2010-12-14
EP1946383A1 (en) 2008-07-23
CN101305468A (zh) 2008-11-12
TWI328288B (en) 2010-08-01
JP2007158307A (ja) 2007-06-21
TW200737525A (en) 2007-10-01
BRPI0618329A2 (pt) 2012-05-08
JP4560505B2 (ja) 2010-10-13
KR100995520B1 (ko) 2010-11-22
WO2007055256A1 (en) 2007-05-18
KR20080074931A (ko) 2008-08-13
RU2390072C2 (ru) 2010-05-20
US20090272970A1 (en) 2009-11-05

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