KR100964040B1 - 탑재 장치, 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

탑재 장치, 플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR100964040B1
KR100964040B1 KR1020070111908A KR20070111908A KR100964040B1 KR 100964040 B1 KR100964040 B1 KR 100964040B1 KR 1020070111908 A KR1020070111908 A KR 1020070111908A KR 20070111908 A KR20070111908 A KR 20070111908A KR 100964040 B1 KR100964040 B1 KR 100964040B1
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South Korea
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plasma
layer
electrostatic chuck
mounting apparatus
processing
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Korean (ko)
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KR20080041116A (ko
Inventor
히로하루 이토
겐이치 가토
다케히로 우에다
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도쿄엘렉트론가부시키가이샤
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Publication of KR20080041116A publication Critical patent/KR20080041116A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
KR1020070111908A 2006-11-06 2007-11-05 탑재 장치, 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR100964040B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00300923 2006-11-06
JP2006300923A JP4992389B2 (ja) 2006-11-06 2006-11-06 載置装置、プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20080041116A KR20080041116A (ko) 2008-05-09
KR100964040B1 true KR100964040B1 (ko) 2010-06-16

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KR1020070111908A Active KR100964040B1 (ko) 2006-11-06 2007-11-05 탑재 장치, 플라즈마 처리 장치 및 플라즈마 처리 방법

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JP (1) JP4992389B2 (https=)
KR (1) KR100964040B1 (https=)
CN (1) CN100543960C (https=)
TW (1) TWI440124B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8206829B2 (en) * 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP5642531B2 (ja) * 2010-12-22 2014-12-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP6014408B2 (ja) * 2012-08-07 2016-10-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6071514B2 (ja) * 2012-12-12 2017-02-01 東京エレクトロン株式会社 静電チャックの改質方法及びプラズマ処理装置
KR101385950B1 (ko) * 2013-09-16 2014-04-16 주식회사 펨빅스 정전척 및 정전척 제조 방법
KR101598465B1 (ko) 2014-09-30 2016-03-02 세메스 주식회사 기판 처리 장치 및 방법
TWI593473B (zh) * 2015-10-28 2017-08-01 漢辰科技股份有限公司 清潔靜電吸盤的方法
KR101842124B1 (ko) 2016-05-27 2018-03-27 세메스 주식회사 지지 유닛, 기판 처리 장치 및 기판 처리 방법
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台
CN108281342B (zh) * 2017-01-05 2020-01-21 东京毅力科创株式会社 等离子体处理装置
JP7038497B2 (ja) * 2017-07-07 2022-03-18 東京エレクトロン株式会社 静電チャックの製造方法
JP7224096B2 (ja) * 2017-07-13 2023-02-17 東京エレクトロン株式会社 プラズマ処理装置用部品の溶射方法及びプラズマ処理装置用部品
JP6768946B2 (ja) * 2017-10-17 2020-10-14 株式会社アルバック 被処理体の処理装置
JP2019151879A (ja) * 2018-03-01 2019-09-12 株式会社アルバック 成膜装置
CN111383986B (zh) * 2018-12-27 2024-11-29 东京毅力科创株式会社 基板载置台及基板处理装置
JP7401266B2 (ja) 2018-12-27 2023-12-19 東京エレクトロン株式会社 基板載置台、及び、基板処理装置
KR102370471B1 (ko) * 2019-02-08 2022-03-03 주식회사 히타치하이테크 플라스마 처리 장치
CN113454761B (zh) 2019-03-01 2024-11-08 日本发条株式会社 载物台以及载物台的制造方法
JP7204564B2 (ja) * 2019-03-29 2023-01-16 東京エレクトロン株式会社 プラズマ処理装置
CN112553592B (zh) * 2019-09-25 2023-03-31 中微半导体设备(上海)股份有限公司 一种利用ald工艺对静电吸盘进行处理的方法
CN114308907B (zh) * 2022-02-23 2023-11-28 深圳市震华等离子体智造有限公司 一种用于精密分析仪器的等离子清洗装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031479A (ja) * 2002-06-24 2004-01-29 Taiheiyo Cement Corp 静電チャック
KR20060105670A (ko) * 2005-03-31 2006-10-11 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012144A (ja) * 2003-06-23 2005-01-13 Kyocera Corp 静電チャック
JP2005072286A (ja) * 2003-08-25 2005-03-17 Kyocera Corp 静電チャック
JP2006019626A (ja) * 2004-07-05 2006-01-19 Tokyo Electron Ltd プラズマ処理装置及びその洗浄方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031479A (ja) * 2002-06-24 2004-01-29 Taiheiyo Cement Corp 静電チャック
KR20060105670A (ko) * 2005-03-31 2006-10-11 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
JP4992389B2 (ja) 2012-08-08
JP2008117982A (ja) 2008-05-22
CN100543960C (zh) 2009-09-23
KR20080041116A (ko) 2008-05-09
CN101179045A (zh) 2008-05-14
TWI440124B (zh) 2014-06-01
TW200837874A (en) 2008-09-16

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