TWI440124B - A placing device, a plasma processing device, and a plasma processing method - Google Patents
A placing device, a plasma processing device, and a plasma processing method Download PDFInfo
- Publication number
- TWI440124B TWI440124B TW096141619A TW96141619A TWI440124B TW I440124 B TWI440124 B TW I440124B TW 096141619 A TW096141619 A TW 096141619A TW 96141619 A TW96141619 A TW 96141619A TW I440124 B TWI440124 B TW I440124B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- plasma
- electrostatic chuck
- mounting device
- carrier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Landscapes
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006300923A JP4992389B2 (ja) | 2006-11-06 | 2006-11-06 | 載置装置、プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200837874A TW200837874A (en) | 2008-09-16 |
| TWI440124B true TWI440124B (zh) | 2014-06-01 |
Family
ID=39405226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096141619A TWI440124B (zh) | 2006-11-06 | 2007-11-05 | A placing device, a plasma processing device, and a plasma processing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4992389B2 (https=) |
| KR (1) | KR100964040B1 (https=) |
| CN (1) | CN100543960C (https=) |
| TW (1) | TWI440124B (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8734664B2 (en) | 2008-07-23 | 2014-05-27 | Applied Materials, Inc. | Method of differential counter electrode tuning in an RF plasma reactor |
| US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
| US8206829B2 (en) * | 2008-11-10 | 2012-06-26 | Applied Materials, Inc. | Plasma resistant coatings for plasma chamber components |
| JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
| JP5642531B2 (ja) * | 2010-12-22 | 2014-12-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP2012204644A (ja) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP6014408B2 (ja) * | 2012-08-07 | 2016-10-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| JP6071514B2 (ja) * | 2012-12-12 | 2017-02-01 | 東京エレクトロン株式会社 | 静電チャックの改質方法及びプラズマ処理装置 |
| KR101385950B1 (ko) * | 2013-09-16 | 2014-04-16 | 주식회사 펨빅스 | 정전척 및 정전척 제조 방법 |
| KR101598465B1 (ko) | 2014-09-30 | 2016-03-02 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| TWI593473B (zh) * | 2015-10-28 | 2017-08-01 | 漢辰科技股份有限公司 | 清潔靜電吸盤的方法 |
| KR101842124B1 (ko) | 2016-05-27 | 2018-03-27 | 세메스 주식회사 | 지지 유닛, 기판 처리 장치 및 기판 처리 방법 |
| JP6854600B2 (ja) * | 2016-07-15 | 2021-04-07 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、および基板載置台 |
| CN108281342B (zh) * | 2017-01-05 | 2020-01-21 | 东京毅力科创株式会社 | 等离子体处理装置 |
| JP7038497B2 (ja) * | 2017-07-07 | 2022-03-18 | 東京エレクトロン株式会社 | 静電チャックの製造方法 |
| JP7224096B2 (ja) * | 2017-07-13 | 2023-02-17 | 東京エレクトロン株式会社 | プラズマ処理装置用部品の溶射方法及びプラズマ処理装置用部品 |
| JP6768946B2 (ja) * | 2017-10-17 | 2020-10-14 | 株式会社アルバック | 被処理体の処理装置 |
| JP2019151879A (ja) * | 2018-03-01 | 2019-09-12 | 株式会社アルバック | 成膜装置 |
| CN111383986B (zh) * | 2018-12-27 | 2024-11-29 | 东京毅力科创株式会社 | 基板载置台及基板处理装置 |
| JP7401266B2 (ja) | 2018-12-27 | 2023-12-19 | 東京エレクトロン株式会社 | 基板載置台、及び、基板処理装置 |
| KR102370471B1 (ko) * | 2019-02-08 | 2022-03-03 | 주식회사 히타치하이테크 | 플라스마 처리 장치 |
| CN113454761B (zh) | 2019-03-01 | 2024-11-08 | 日本发条株式会社 | 载物台以及载物台的制造方法 |
| JP7204564B2 (ja) * | 2019-03-29 | 2023-01-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN112553592B (zh) * | 2019-09-25 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | 一种利用ald工艺对静电吸盘进行处理的方法 |
| CN114308907B (zh) * | 2022-02-23 | 2023-11-28 | 深圳市震华等离子体智造有限公司 | 一种用于精密分析仪器的等离子清洗装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4104386B2 (ja) * | 2002-06-24 | 2008-06-18 | 太平洋セメント株式会社 | 静電チャックの製造方法 |
| JP2005012144A (ja) * | 2003-06-23 | 2005-01-13 | Kyocera Corp | 静電チャック |
| JP2005072286A (ja) * | 2003-08-25 | 2005-03-17 | Kyocera Corp | 静電チャック |
| JP2006019626A (ja) * | 2004-07-05 | 2006-01-19 | Tokyo Electron Ltd | プラズマ処理装置及びその洗浄方法 |
| JP4642528B2 (ja) * | 2005-03-31 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2006
- 2006-11-06 JP JP2006300923A patent/JP4992389B2/ja active Active
-
2007
- 2007-11-02 CN CNB200710168038XA patent/CN100543960C/zh not_active Expired - Fee Related
- 2007-11-05 KR KR1020070111908A patent/KR100964040B1/ko active Active
- 2007-11-05 TW TW096141619A patent/TWI440124B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP4992389B2 (ja) | 2012-08-08 |
| JP2008117982A (ja) | 2008-05-22 |
| KR100964040B1 (ko) | 2010-06-16 |
| CN100543960C (zh) | 2009-09-23 |
| KR20080041116A (ko) | 2008-05-09 |
| CN101179045A (zh) | 2008-05-14 |
| TW200837874A (en) | 2008-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI440124B (zh) | A placing device, a plasma processing device, and a plasma processing method | |
| US20080106842A1 (en) | Mounting device, plasma processing apparatus and plasma processing method | |
| CN102693892B (zh) | 等离子体处理装置和等离子体处理方法 | |
| TWI567862B (zh) | A particle adhesion control method and a processing device for the substrate to be processed | |
| US20080236750A1 (en) | Plasma processing apparatus | |
| CN101512734A (zh) | 基板处理装置及其方法 | |
| US20080105378A1 (en) | Plasma processing method and apparatus, and storage medium | |
| KR100782621B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
| US9147556B2 (en) | Plasma processing method and plasma processing apparatus | |
| JP2008117982A5 (https=) | ||
| JP4642809B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| JP2017010993A (ja) | プラズマ処理方法 | |
| US20100218786A1 (en) | Cleaning method of plasma processing apparatus and storage medium | |
| KR20180124773A (ko) | 플라즈마 처리 장치의 세정 방법 | |
| JP5704192B2 (ja) | プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体 | |
| US20050193951A1 (en) | Plasma processing apparatus | |
| TWI829787B (zh) | 被處理體之電漿蝕刻方法及電漿蝕刻裝置 | |
| JP2007324154A (ja) | プラズマ処理装置 | |
| US9721766B2 (en) | Method for processing target object | |
| JP2004071791A (ja) | 基板載置部材およびそれを用いた基板処理装置 | |
| US7569478B2 (en) | Method and apparatus for manufacturing semiconductor device, control program and computer storage medium | |
| JP2004335637A (ja) | エッチング方法及びエッチング装置 | |
| JP5349805B2 (ja) | 半導体デバイス製造装置の製造方法及び半導体デバイス製造装置の洗浄方法 |