KR100933277B1 - GaN계 캡 세그먼트 상에 게이트 콘택을 구비한AlGaN/GaN HEMT 및 그 제조방법 - Google Patents
GaN계 캡 세그먼트 상에 게이트 콘택을 구비한AlGaN/GaN HEMT 및 그 제조방법 Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 173
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
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Abstract
Description
Eastman 등은 마이크로파 전력 응용을 위한 언도프트 AlGaN/GaN HEMT를 설명한다(IEEE Transactions on Electron Devices, Vol. 48, No. 3, March 2001, pp. 479-485). Kawai 등에게 허여된 미국특허 제6,064,082호는 갈륨 나이트라이드계 이종접합 전계 효과 트랜지스터를 설명한다.
Claims (44)
- 갈륨 나이트라이드(GaN) 채널층;상기 채널층 상의 알루미늄 갈륨 나이트라이드(AlGaN) 배리어층;상기 배리어층 상에 위치하여 소스 전극을 제공하는 제1 오믹 콘택;상기 배리어층 상에 상기 소스 전극과 이격되어 위치하고 드레인 전극을 제공하는 제2 오믹 콘택;상기 소스 전극과 드레인 전극 사이의 상기 배리어층 상에 위치하고, 상기 배리어층보다 낮은 농도의 알루미늄을 가지며, 상기 소스 전극과 이격되어 인접한 제1 측벽을 가진 GaN계 캡 세그먼트; 및상기 GaN계 캡 세그먼트 상에 위치하고, 상기 GaN계 캡 세그먼트의 상기 제1 측벽과 정렬된 제1 측벽을 가지며 상기 GaN계 캡 세그먼트의 제1 측벽과 제2 측벽 사이의 거리 중 일부에만 신장되어 있는 게이트 콘택을 제공하는 비-오믹 콘택을 포함하는 고 전자이동도 트랜지스터(HEMT).
- 제1항에 있어서, 상기 GaN계 캡 세그먼트는 상기 드레인 전극과 이격되어 인접한 제2 측벽을 가진 것을 특징으로 하는 HEMT.
- 제1항에 있어서, 상기 GaN계 캡 세그먼트는 GaN 캡 세그먼트를 포함하는 것을 특징으로 하는 HEMT.
- 제3항에 있어서, 상기 비-오믹 콘택은 상기 GaN 캡 세그먼트의 상기 제1 측벽으로 신장하지만 지나치지는 않는 것을 특징으로 하는 HEMT.
- 제3항에 있어서, 상기 GaN 캡 세그먼트는 10 내지 60Å의 두께를 가진 것을 특징으로 하는 HEMT.
- 제5항에 있어서, 상기 GaN 캡 세그먼트는 언도프트 GaN을 포함하는 것을 특징으로 하는 HEMT.
- 제2항에 있어서, 상기 소스 전극과 상기 드레인 전극은 2 내지 4㎛ 거리로 이격되어 있는 것을 특징으로 하는 HEMT.
- 제3항에 있어서, 상기 GaN 캡 세그먼트의 상기 제1 측벽은 상기 소스 전극으로부터 2㎛ 미만인 것을 특징으로 하는 HEMT.
- 제8항에 있어서, 상기 GaN 캡 세그먼트의 상기 제1 측벽은 상기 소스 전극으로부터 0.3 내지 1.5㎛인 것을 특징으로 하는 HEMT.
- 제2항에 있어서, 상기 GaN 캡 세그먼트의 상기 제2 측벽은 상기 게이트 전극으로부터 0.5 내지 1㎛인 것을 특징으로 하는 HEMT.
- 제3항에 있어서, 상기 AlGaN 배리어층은 15% 내지 60%의 알루미늄을 포함하는 것을 특징으로 하는 HEMT.
- 제11항에 있어서, 상기 AlGaN 배리어층은 실리콘으로 도핑되어 5×1012cm-2에 이르는 총 면농도를 제공하는 것을 특징으로 하는 HEMT.
- 제11항에 있어서, 상기 AlGaN 배리어층은 15 내지 40nm의 두께를 가진 것을 특징으로 하는 HEMT.
- 제13항에 있어서, 상기 AlGaN 배리어층은 25nm의 두께를 가진 것을 특징으로 하는 HEMT.
- 제3항에 있어서, 기판을 더 포함하고, 상기 GaN 채널층이 상기 기판 상에 위치하는 것을 특징으로 하는 HEMT.
- 제15항에 있어서, 상기 기판은 실리콘 카바이드를 포함하는 것을 특징으로 하는 HEMT.
- 제15항에 있어서, 상기 기판은 사파이어를 포함하는 것을 특징으로 하는 HEMT.
- 제15항에 있어서, 상기 기판은 4H 실리콘 카바이드와 6H 실리콘 카바이드 중 적어도 하나를 포함하는 것을 특징으로 하는 HEMT.
- 제15항에 있어서, 상기 GaN 채널층과 상기 기판 사이에 배치된 GaN 버퍼층을 더 포함하는 것을 특징으로 하는 HEMT.
- 제1항에 있어서, 상기 게이트 전극은 T-형 게이트 전극을 포함하는 것을 특징으로 하는 HEMT.
- 기판 상에 제1 갈륨 나이트라이드(GaN)층을 형성하는 단계;상기 제1 GaN층 상에 알루미늄 갈륨 나이트라이드(AlGaN)층을 형성하는 단계;상기 AlGaN층 상에 상기 AlGaN층보다 낮은 알루미늄 농도를 가진 GaN계 세그먼트를 형성하는 단계;상기 AlGaN층에 상기 GaN계 세그먼트와 이격되어 인접한 제1 오믹 콘택을 형성하여 소스 전극을 제공하는 단계;상기 AlGaN층 상에 상기 제1 오믹 콘택 반대편으로 상기 GaN계 세그먼트와 이격되어 인접한 제2 오믹 콘택을 형성하여 상기 GaN계 세그먼트가 상기 제1 오믹 콘택과 제2 오믹 콘택 사이에 배치되도록 함으로써 드레인 전극을 제공하는 단계; 및상기 GaN계 세그먼트 상에 비-오믹 콘택을 형성하여, 상기 소스 전극에 인접하여 상기 GaN계 세그먼트의 제1 측벽과 정렬된 제1 측벽을 가지며 상기 제1 측벽과 제2 오믹 콘택 사이의 거리 중 일부에만 신장되어 있는 게이트 콘택을 제공하는 단계를 포함하는 고 전자이동도 트랜지스터(HEMT) 제조방법.
- 제21항에 있어서, 상기 비-오믹 콘택은 상기 GaN계 세그먼트의 상기 제1 측벽과 상기 드레인 전극에 인접한 제2 측벽 사이의 거리 중 일부에만 신장되어 있는 것을 특징으로 하는 HEMT 제조방법.
- 제22항에 있어서, 상기 GaN계 세그먼트를 형성하는 단계는 상기 AlGaN층 상에 GaN 세그먼트를 형성하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 GaN 세그먼트를 형성하는 단계와 비-오믹 콘택을 형성하는 단계는상기 AlGaN층 상에 제2 GaN층을 형성하는 단계;상기 제2 GaN층 상에 비-오믹 콘택을 형성하는 단계;상기 비-오믹 콘택과 제2 GaN층을 패터닝하여 상기 GaN 세그먼트와 상기 게 이트 콘택을 제공하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제24항에 있어서, 상기 비-오믹 콘택과 제2 GaN층을 패터닝하는 단계는상기 비-오믹 콘택과 제2 GaN층 상에 마스크층을 형성하여 상기 비-오믹 콘택의 측벽과 상기 소스 전극에 인접한 상기 GaN 세그먼트와 상기 드레인 전극에 인접한 상기 GaN 세그먼트의 측벽이 정의되도록 상기 마스크층으로 상기 비-오믹 콘택과 제2 GaN층의 일부를 덮는 단계;상기 비-오믹 콘택과 제2 GaN층을 식각하여 상기 AlGaN층의 일부를 노출시키는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 GaN 세그먼트는 10 내지 60Å의 두께를 가지도록 형성하는 것을 특징으로 하는 HEMT 제조방법.
- 제26항에 있어서, 상기 GaN 캡 세그먼트는 언도프트 GaN을 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 제1 오믹 콘택을 형성하는 단계와 상기 제2 오믹 콘택을 형성하는 단계는 2 내지 4㎛ 거리로 이격된 제1 오믹 콘택과 제2 오믹 콘택을 형성하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 제1 오믹 콘택은 상기 GaN 세그먼트로부터 2㎛ 미만의 거리에 형성하는 것을 특징으로 하는 HEMT 제조방법.
- 제29항에 있어서, 상기 제1 오믹 콘택은 상기 GaN 세그먼트로부터 0.3 내지 1.5㎛의 거리에 형성하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 비-오믹 콘택의 측벽이 상기 GaN 세그먼트의 상기 제2 측벽으로부터 0.5 내지 1㎛에 위치하도록 상기 비-오믹 콘택을 패터닝하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 AlGaN층을 형성하는 단계는 15% 내지 60%의 알루미늄을 가지는 AlGaN층을 형성하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제32항에 있어서, 상기 AlGaN층을 형성하는 단계는 실리콘으로 도핑되어 5×1012cm-2에 이르는 총 면농도를 보이는 AlGaN층을 형성하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제32항에 있어서, 상기 AlGaN층을 형성하는 단계는 15 내지 40nm의 두께로 AlGaN층을 형성하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제34항에 있어서, 상기 AlGaN층을 형성하는 단계는 25nm의 두께로 AlGaN층을 형성하는 단계를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 기판은 실리콘 카바이드를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 기판은 사파이어를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 기판은 4H 실리콘 카바이드와 6H 실리콘 카바이드 중 적어도 하나를 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, 상기 제1 GaN층과 상기 기판 사이에 배치된 제3 GaN층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 제23항에 있어서, T-형 게이트를 제공하기 위하여 상기 비-오믹 콘택 상에 금속화층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 HEMT 제조방법.
- 갈륨 나이트라이드(GaN) 채널층;알루미늄 갈륨 나이트라이드(AlGaN) 배리어층;상기 AlGaN 배리어층 상에 위치하고 소스 콘택 및 드레인 콘택을 제공하기 위한 오믹 콘택들;상기 소스 콘택 및 드레인 콘택 사이에 배치된 비-오믹 게이트 콘택; 및상기 비-오믹 게이트 콘택 및 상기 AlGaN 배리어층과 연동된 수단으로서, 상기 수단이 없을 때보다 상기 오믹 콘택들의 저항을 줄이고 상기 게이트 콘택의 차단 전압을 증가시키는, 상기 오믹 콘택들의 저항을 감소시키고 상기 게이트 콘택의 차단 전압을 증가시키기 위한 수단을 포함하는 고 전자이동도 트랜지스터(HEMT).
- 제41항에 있어서, 상기 오믹 콘택들의 저항을 감소시키고 상기 게이트 콘택의 차단 전압을 증가시키기 위한 수단은 상기 게이트 콘택과 상기 AlGaN 배리어층 사이의 GaN 세그먼트를 포함하고, 상기 GaN 세그먼트는 상기 소스 콘택에 인접한 상기 GaN 세그먼트의 부분 상에 상기 게이트 콘택을 구비하며, 상기 GaN 세그먼트는 상기 게이트 콘택을 지나 상기 드레인 콘택으로 신장하여 있는 것을 특징으로 하는 HEMT.
- 제42항에 있어서, 상기 게이트 콘택은 상기 GaN 세그먼트의 측벽으로 신장하지만 지나치지는 않고, 상기 소스 콘택과 이격되어 있는 것을 특징으로 하는 HEMT.
- 제42항에 있어서, 상기 GaN 세그먼트는 0.5 내지 1㎛ 신장하는 것을 특징으로 하는 HEMT.
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US09/904,333 | 2001-07-12 | ||
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US6777278B2 (en) | 2004-08-17 |
CA2453318A1 (en) | 2003-01-23 |
WO2003007383A3 (en) | 2003-04-17 |
CN100429786C (zh) | 2008-10-29 |
US20030157776A1 (en) | 2003-08-21 |
US20020066908A1 (en) | 2002-06-06 |
WO2003007383A2 (en) | 2003-01-23 |
TW577127B (en) | 2004-02-21 |
US6548333B2 (en) | 2003-04-15 |
AU2002255935A1 (en) | 2003-01-29 |
CN1554121A (zh) | 2004-12-08 |
JP4445257B2 (ja) | 2010-04-07 |
EP1405349A2 (en) | 2004-04-07 |
CA2453318C (en) | 2014-06-10 |
EP1405349B1 (en) | 2012-08-08 |
JP2004535676A (ja) | 2004-11-25 |
KR20040013136A (ko) | 2004-02-11 |
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