KR100909697B1 - 반도체장치의 제조방법 및 기판처리장치 - Google Patents

반도체장치의 제조방법 및 기판처리장치 Download PDF

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KR100909697B1
KR100909697B1 KR1020077019513A KR20077019513A KR100909697B1 KR 100909697 B1 KR100909697 B1 KR 100909697B1 KR 1020077019513 A KR1020077019513 A KR 1020077019513A KR 20077019513 A KR20077019513 A KR 20077019513A KR 100909697 B1 KR100909697 B1 KR 100909697B1
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containing gas
processing chamber
temperature
hydrogen
substrate
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KR20070098952A (ko
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카즈히로 유아사
야스히로 메가와
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가부시키가이샤 히다치 고쿠사이 덴키
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Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077019513A 2005-03-08 2006-03-08 반도체장치의 제조방법 및 기판처리장치 Expired - Fee Related KR100909697B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00064475 2005-03-08
JP2005064475 2005-03-08
PCT/JP2006/304429 WO2006095752A1 (ja) 2005-03-08 2006-03-08 半導体装置の製造方法および基板処理装置

Related Child Applications (1)

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KR1020097005917A Division KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

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KR20070098952A KR20070098952A (ko) 2007-10-05
KR100909697B1 true KR100909697B1 (ko) 2009-07-29

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KR1020077019513A Expired - Fee Related KR100909697B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조방법 및 기판처리장치
KR1020107002353A Expired - Lifetime KR100994649B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107010998A Expired - Lifetime KR101002945B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107002352A Expired - Lifetime KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020097005917A Expired - Fee Related KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

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Application Number Title Priority Date Filing Date
KR1020107002353A Expired - Lifetime KR100994649B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107010998A Expired - Lifetime KR101002945B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107002352A Expired - Lifetime KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020097005917A Expired - Fee Related KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

Country Status (5)

Country Link
US (2) US7713883B2 (https=)
JP (3) JP4672007B2 (https=)
KR (5) KR100909697B1 (https=)
TW (1) TW200705552A (https=)
WO (1) WO2006095752A1 (https=)

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JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP5575582B2 (ja) * 2007-12-26 2014-08-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5665289B2 (ja) * 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20110001179A1 (en) * 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
TWI572043B (zh) * 2010-06-10 2017-02-21 應用材料股份有限公司 具增強的游離及ｒｆ功率耦合的低電阻率鎢ｐｖｄ
JP5686487B2 (ja) * 2011-06-03 2015-03-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
KR102028779B1 (ko) * 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
JP6091932B2 (ja) * 2012-03-22 2017-03-08 株式会社ニューフレアテクノロジー 炭化珪素の成膜装置および炭化珪素の成膜方法
US20140034632A1 (en) * 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
JP6196106B2 (ja) * 2013-09-13 2017-09-13 東京エレクトロン株式会社 シリコン酸化膜の製造方法
JP6380063B2 (ja) * 2014-12-08 2018-08-29 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、および、気相成長装置
JP6573578B2 (ja) 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2018055724A1 (ja) * 2016-09-23 2018-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP7129486B2 (ja) 2018-09-21 2022-09-01 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置及びプログラム
JP7345245B2 (ja) * 2018-11-13 2023-09-15 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
WO2023099926A1 (en) * 2021-12-03 2023-06-08 Organic Electronic Technologies Private Company Printed transparent electrode using silver nanowires and metal oxide nanoparticles blend for fully printed electronic devices
KR102910999B1 (ko) * 2021-12-15 2026-01-13 주식회사 원익아이피에스 기판처리방법
US20230215737A1 (en) * 2021-12-31 2023-07-06 Texas Instruments Incorporated Method of annealing out silicon defectivity
JP7651533B2 (ja) * 2022-09-26 2025-03-26 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム

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JP2000211998A (ja) * 1999-01-25 2000-08-02 Angstrom Technology Partnership シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法

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Publication number Publication date
JP4672007B2 (ja) 2011-04-20
KR100994649B1 (ko) 2010-11-16
KR101002945B1 (ko) 2010-12-21
KR20070098952A (ko) 2007-10-05
JP2011077534A (ja) 2011-04-14
TW200705552A (en) 2007-02-01
US20080124943A1 (en) 2008-05-29
US20100192855A1 (en) 2010-08-05
WO2006095752A1 (ja) 2006-09-14
KR20100018110A (ko) 2010-02-16
US7713883B2 (en) 2010-05-11
KR100982996B1 (ko) 2010-09-17
JP5325363B2 (ja) 2013-10-23
JP5399996B2 (ja) 2014-01-29
KR20090033923A (ko) 2009-04-06
JPWO2006095752A1 (ja) 2008-08-14
TWI342585B (https=) 2011-05-21
KR20100028663A (ko) 2010-03-12
JP2011003915A (ja) 2011-01-06
KR20100057101A (ko) 2010-05-28
KR100966086B1 (ko) 2010-06-28

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