TWI342585B - - Google Patents
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- Publication number
- TWI342585B TWI342585B TW095107720A TW95107720A TWI342585B TW I342585 B TWI342585 B TW I342585B TW 095107720 A TW095107720 A TW 095107720A TW 95107720 A TW95107720 A TW 95107720A TW I342585 B TWI342585 B TW I342585B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- processing chamber
- containing gas
- hydrogen
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
Landscapes
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005064475 | 2005-03-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200705552A TW200705552A (en) | 2007-02-01 |
| TWI342585B true TWI342585B (https=) | 2011-05-21 |
Family
ID=36953346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095107720A TW200705552A (en) | 2005-03-08 | 2006-03-08 | Semiconductor device manufacturing method and substrate treatment device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7713883B2 (https=) |
| JP (3) | JP4672007B2 (https=) |
| KR (5) | KR100966086B1 (https=) |
| TW (1) | TW200705552A (https=) |
| WO (1) | WO2006095752A1 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
| JP4943047B2 (ja) * | 2006-04-07 | 2012-05-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| JP2008186865A (ja) * | 2007-01-26 | 2008-08-14 | Tokyo Electron Ltd | 基板処理装置 |
| JP5575582B2 (ja) * | 2007-12-26 | 2014-08-20 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP4611414B2 (ja) | 2007-12-26 | 2011-01-12 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP5383332B2 (ja) * | 2008-08-06 | 2014-01-08 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| JP5665289B2 (ja) | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| US20110001179A1 (en) * | 2009-07-03 | 2011-01-06 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
| KR101714607B1 (ko) | 2010-06-10 | 2017-03-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 이온화 및 무선 주파수 전력 커플링을 갖는 낮은 비저항의 텅스텐 물리 기상 증착 |
| KR101509453B1 (ko) * | 2011-06-03 | 2015-04-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 |
| KR102028779B1 (ko) * | 2012-02-13 | 2019-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 선택적 산화를 위한 방법 및 장치 |
| JP6091932B2 (ja) * | 2012-03-22 | 2017-03-08 | 株式会社ニューフレアテクノロジー | 炭化珪素の成膜装置および炭化珪素の成膜方法 |
| US20140034632A1 (en) * | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
| JP6196106B2 (ja) * | 2013-09-13 | 2017-09-13 | 東京エレクトロン株式会社 | シリコン酸化膜の製造方法 |
| JP6380063B2 (ja) * | 2014-12-08 | 2018-08-29 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、および、気相成長装置 |
| JP6573578B2 (ja) | 2016-05-31 | 2019-09-11 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| WO2018055724A1 (ja) * | 2016-09-23 | 2018-03-29 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| WO2020059133A1 (ja) | 2018-09-21 | 2020-03-26 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及び記録媒体 |
| JP7345245B2 (ja) * | 2018-11-13 | 2023-09-15 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| TW202107528A (zh) * | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
| JP2024546086A (ja) * | 2021-12-03 | 2024-12-17 | オーガニック エレクトロニック テクノロジーズ プライベート カンパニー | 完全印刷電子デバイスのための銀ナノワイヤおよび金属酸化物ナノ粒子のブレンドを使用した印刷透明電極 |
| KR102910999B1 (ko) * | 2021-12-15 | 2026-01-13 | 주식회사 원익아이피에스 | 기판처리방법 |
| US20230215737A1 (en) * | 2021-12-31 | 2023-07-06 | Texas Instruments Incorporated | Method of annealing out silicon defectivity |
| JP7651533B2 (ja) * | 2022-09-26 | 2025-03-26 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132136A (ja) * | 1983-01-19 | 1984-07-30 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2902012B2 (ja) * | 1989-10-27 | 1999-06-07 | 国際電気株式会社 | 低圧酸化装置 |
| JP3541846B2 (ja) * | 1992-05-22 | 2004-07-14 | 松下電器産業株式会社 | 半導体製造装置 |
| JP3207943B2 (ja) * | 1992-11-17 | 2001-09-10 | 忠弘 大見 | 低温酸化膜形成装置および低温酸化膜形成方法 |
| JP3310386B2 (ja) * | 1993-05-25 | 2002-08-05 | 忠弘 大見 | 絶縁酸化膜の形成方法及び半導体装置 |
| KR100310461B1 (ko) | 1994-12-20 | 2001-12-15 | 박종섭 | 실리콘산화막의형성방법 |
| JPH10335652A (ja) * | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPH10340909A (ja) * | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| WO1999003141A1 (en) * | 1997-07-11 | 1999-01-21 | Applied Materials, Inc. | Method and apparatus for in situ vapor generation |
| JP3156680B2 (ja) * | 1998-10-13 | 2001-04-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2000211998A (ja) * | 1999-01-25 | 2000-08-02 | Angstrom Technology Partnership | シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法 |
| NL1013667C2 (nl) * | 1999-11-25 | 2000-12-15 | Asm Int | Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal. |
| US20010037237A1 (en) * | 2000-04-28 | 2001-11-01 | Fujitsu Limited | Sales promotion controlling system based on direct mail, server thereof , method thereof, and computer readable record medium thereof |
| JP3436256B2 (ja) * | 2000-05-02 | 2003-08-11 | 東京エレクトロン株式会社 | 被処理体の酸化方法及び酸化装置 |
| JP2002110667A (ja) | 2000-09-29 | 2002-04-12 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| JP2002176051A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| DE10119741B4 (de) * | 2001-04-23 | 2012-01-19 | Mattson Thermal Products Gmbh | Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten |
| JP2002353214A (ja) * | 2001-05-24 | 2002-12-06 | Nec Corp | 半導体装置の製造方法 |
| JP2002353210A (ja) * | 2001-05-25 | 2002-12-06 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
| JP2003086792A (ja) * | 2001-09-10 | 2003-03-20 | National Institute Of Advanced Industrial & Technology | 半導体装置の作製法 |
| TW200416772A (en) * | 2002-06-06 | 2004-09-01 | Asml Us Inc | System and method for hydrogen-rich selective oxidation |
| US6916744B2 (en) * | 2002-12-19 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile |
| JP2003338623A (ja) * | 2003-04-18 | 2003-11-28 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2004172623A (ja) * | 2003-11-17 | 2004-06-17 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR100591762B1 (ko) * | 2004-01-19 | 2006-06-22 | 삼성전자주식회사 | 증착 장치 및 증착 방법 |
| JP4706260B2 (ja) * | 2004-02-25 | 2011-06-22 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
| CN101053083B (zh) * | 2005-02-01 | 2011-01-12 | 东京毅力科创株式会社 | 半导体装置的制造方法和等离子体氧化处理方法 |
-
2006
- 2006-03-08 KR KR1020097005917A patent/KR100966086B1/ko not_active Expired - Fee Related
- 2006-03-08 KR KR1020107010998A patent/KR101002945B1/ko not_active Expired - Lifetime
- 2006-03-08 US US11/885,869 patent/US7713883B2/en active Active
- 2006-03-08 KR KR1020077019513A patent/KR100909697B1/ko not_active Expired - Lifetime
- 2006-03-08 KR KR1020107002353A patent/KR100994649B1/ko not_active Expired - Lifetime
- 2006-03-08 JP JP2007507138A patent/JP4672007B2/ja not_active Expired - Lifetime
- 2006-03-08 WO PCT/JP2006/304429 patent/WO2006095752A1/ja not_active Ceased
- 2006-03-08 TW TW095107720A patent/TW200705552A/zh unknown
- 2006-03-08 KR KR1020107002352A patent/KR100982996B1/ko not_active Expired - Lifetime
-
2010
- 2010-02-03 US US12/656,566 patent/US20100192855A1/en not_active Abandoned
- 2010-08-02 JP JP2010173284A patent/JP5399996B2/ja not_active Expired - Lifetime
- 2010-11-16 JP JP2010255766A patent/JP5325363B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011003915A (ja) | 2011-01-06 |
| US7713883B2 (en) | 2010-05-11 |
| KR20090033923A (ko) | 2009-04-06 |
| KR20100057101A (ko) | 2010-05-28 |
| KR20100028663A (ko) | 2010-03-12 |
| JP4672007B2 (ja) | 2011-04-20 |
| JP5325363B2 (ja) | 2013-10-23 |
| KR101002945B1 (ko) | 2010-12-21 |
| US20100192855A1 (en) | 2010-08-05 |
| WO2006095752A1 (ja) | 2006-09-14 |
| KR100966086B1 (ko) | 2010-06-28 |
| US20080124943A1 (en) | 2008-05-29 |
| KR20070098952A (ko) | 2007-10-05 |
| JP2011077534A (ja) | 2011-04-14 |
| KR100994649B1 (ko) | 2010-11-16 |
| JP5399996B2 (ja) | 2014-01-29 |
| KR100982996B1 (ko) | 2010-09-17 |
| JPWO2006095752A1 (ja) | 2008-08-14 |
| KR20100018110A (ko) | 2010-02-16 |
| KR100909697B1 (ko) | 2009-07-29 |
| TW200705552A (en) | 2007-02-01 |
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