KR100894945B1 - 화상 표시 장치 및 그 제조 방법 - Google Patents

화상 표시 장치 및 그 제조 방법 Download PDF

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Publication number
KR100894945B1
KR100894945B1 KR1020020039650A KR20020039650A KR100894945B1 KR 100894945 B1 KR100894945 B1 KR 100894945B1 KR 1020020039650 A KR1020020039650 A KR 1020020039650A KR 20020039650 A KR20020039650 A KR 20020039650A KR 100894945 B1 KR100894945 B1 KR 100894945B1
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South Korea
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block
circuit
tft
display device
pixel
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KR1020020039650A
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English (en)
Korean (ko)
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KR20030051152A (ko
Inventor
시바다께오
하따노무쯔꼬
야마구찌신야
박성기
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가부시키가이샤 히타치세이사쿠쇼
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
KR1020020039650A 2001-12-12 2002-07-09 화상 표시 장치 및 그 제조 방법 Expired - Fee Related KR100894945B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001378027A JP2003179068A (ja) 2001-12-12 2001-12-12 画像表示装置およびその製造方法
JPJP-P-2001-00378027 2001-12-12

Publications (2)

Publication Number Publication Date
KR20030051152A KR20030051152A (ko) 2003-06-25
KR100894945B1 true KR100894945B1 (ko) 2009-04-27

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KR1020020039650A Expired - Fee Related KR100894945B1 (ko) 2001-12-12 2002-07-09 화상 표시 장치 및 그 제조 방법

Country Status (5)

Country Link
US (3) US6713324B2 (enExample)
JP (1) JP2003179068A (enExample)
KR (1) KR100894945B1 (enExample)
CN (2) CN100487921C (enExample)
TW (1) TWI268612B (enExample)

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JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
KR100450761B1 (ko) * 2002-09-14 2004-10-01 한국전자통신연구원 능동 구동형 유기 이엘 다이오드 디스플레이 패널 회로
US7142030B2 (en) 2002-12-03 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Data latch circuit and electronic device
US6870895B2 (en) * 2002-12-19 2005-03-22 Semiconductor Energy Laboratory Co., Ltd. Shift register and driving method thereof
JP4116465B2 (ja) 2003-02-20 2008-07-09 株式会社日立製作所 パネル型表示装置とその製造方法および製造装置
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
JP4887599B2 (ja) * 2003-11-19 2012-02-29 セイコーエプソン株式会社 回路基板、回路基板の製造方法、表示装置および電子機器
JP4838982B2 (ja) 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
DE102004007398B4 (de) * 2004-02-16 2007-10-18 Infineon Technologies Ag Konfigurierbare Gate-Array-Zelle mit erweiterter Gate-Elektrode
JP2006019609A (ja) * 2004-07-05 2006-01-19 Hitachi Displays Ltd 画像表示装置
JP2006054073A (ja) * 2004-08-10 2006-02-23 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルの製造方法
KR101064186B1 (ko) * 2005-08-10 2011-09-14 삼성전자주식회사 레벨쉬프터와, 이를 갖는 표시장치
JP2007088364A (ja) 2005-09-26 2007-04-05 Hitachi Displays Ltd 表示装置
CN108172625B (zh) * 2016-12-07 2020-09-29 清华大学 一种逻辑电路

Citations (4)

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KR19990029581A (ko) * 1997-09-08 1999-04-26 다카노 야스아키 반도체 장치 및 액정 표시 장치
KR20000001168A (ko) * 1998-06-09 2000-01-15 구본준, 론 위라하디락사 박막트랜지스터 액정표시장치의 제조방법
JP2000058863A (ja) * 1993-05-26 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体装置
KR20010071526A (ko) * 1998-07-06 2001-07-28 모리시타 요이찌 박막 트랜지스터와 액정표시장치

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JP3081497B2 (ja) * 1995-03-30 2000-08-28 三洋電機株式会社 表示装置及びその製造方法
JP3870420B2 (ja) * 1995-12-26 2007-01-17 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法、エレクトロルミネッセンス装置の製造方法、表示装置の製造方法、及び電子機器の製造方法
JPH09283438A (ja) * 1996-04-08 1997-10-31 A G Technol Kk 多結晶半導体薄膜、その形成方法、多結晶半導体ｔｆｔ及びｔｆｔ基板
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JPH09321310A (ja) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
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JPH11121753A (ja) 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JP3445121B2 (ja) * 1997-10-24 2003-09-08 キヤノン株式会社 マトリクス基板と液晶表示装置及びこれを用いるプロジェクター
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JP5210478B2 (ja) * 2001-08-31 2013-06-12 株式会社半導体エネルギー研究所 表示装置
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
JP4190798B2 (ja) * 2002-05-08 2008-12-03 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタ及びその製造方法
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JP2000058863A (ja) * 1993-05-26 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体装置
KR19990029581A (ko) * 1997-09-08 1999-04-26 다카노 야스아키 반도체 장치 및 액정 표시 장치
KR20000001168A (ko) * 1998-06-09 2000-01-15 구본준, 론 위라하디락사 박막트랜지스터 액정표시장치의 제조방법
KR20010071526A (ko) * 1998-07-06 2001-07-28 모리시타 요이찌 박막 트랜지스터와 액정표시장치

Also Published As

Publication number Publication date
CN100487921C (zh) 2009-05-13
JP2003179068A (ja) 2003-06-27
KR20030051152A (ko) 2003-06-25
US6713324B2 (en) 2004-03-30
US6949419B2 (en) 2005-09-27
US20050085021A1 (en) 2005-04-21
US20030109074A1 (en) 2003-06-12
TWI268612B (en) 2006-12-11
CN1426043A (zh) 2003-06-25
CN101114098A (zh) 2008-01-30
US20040185605A1 (en) 2004-09-23
CN100335956C (zh) 2007-09-05
US7193238B2 (en) 2007-03-20

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