CN100487921C - 图像显示装置及其制造方法 - Google Patents

图像显示装置及其制造方法 Download PDF

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Publication number
CN100487921C
CN100487921C CNB2007101411769A CN200710141176A CN100487921C CN 100487921 C CN100487921 C CN 100487921C CN B2007101411769 A CNB2007101411769 A CN B2007101411769A CN 200710141176 A CN200710141176 A CN 200710141176A CN 100487921 C CN100487921 C CN 100487921C
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CN
China
Prior art keywords
circuit
display device
tft
mentioned
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2007101411769A
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English (en)
Chinese (zh)
Other versions
CN101114098A (zh
Inventor
芝健夫
波多野睦子
山口伸也
朴成基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN101114098A publication Critical patent/CN101114098A/zh
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Publication of CN100487921C publication Critical patent/CN100487921C/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
CNB2007101411769A 2001-12-12 2002-07-10 图像显示装置及其制造方法 Expired - Fee Related CN100487921C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP378027/2001 2001-12-12
JP2001378027A JP2003179068A (ja) 2001-12-12 2001-12-12 画像表示装置およびその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB021405980A Division CN100335956C (zh) 2001-12-12 2002-07-10 图像显示装置

Publications (2)

Publication Number Publication Date
CN101114098A CN101114098A (zh) 2008-01-30
CN100487921C true CN100487921C (zh) 2009-05-13

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Family Applications (2)

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CNB2007101411769A Expired - Fee Related CN100487921C (zh) 2001-12-12 2002-07-10 图像显示装置及其制造方法
CNB021405980A Expired - Fee Related CN100335956C (zh) 2001-12-12 2002-07-10 图像显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB021405980A Expired - Fee Related CN100335956C (zh) 2001-12-12 2002-07-10 图像显示装置

Country Status (5)

Country Link
US (3) US6713324B2 (enExample)
JP (1) JP2003179068A (enExample)
KR (1) KR100894945B1 (enExample)
CN (2) CN100487921C (enExample)
TW (1) TWI268612B (enExample)

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* Cited by examiner, † Cited by third party
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JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
KR100450761B1 (ko) * 2002-09-14 2004-10-01 한국전자통신연구원 능동 구동형 유기 이엘 다이오드 디스플레이 패널 회로
US7142030B2 (en) 2002-12-03 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Data latch circuit and electronic device
US6870895B2 (en) * 2002-12-19 2005-03-22 Semiconductor Energy Laboratory Co., Ltd. Shift register and driving method thereof
JP4116465B2 (ja) 2003-02-20 2008-07-09 株式会社日立製作所 パネル型表示装置とその製造方法および製造装置
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
JP4887599B2 (ja) * 2003-11-19 2012-02-29 セイコーエプソン株式会社 回路基板、回路基板の製造方法、表示装置および電子機器
JP4838982B2 (ja) 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
DE102004007398B4 (de) * 2004-02-16 2007-10-18 Infineon Technologies Ag Konfigurierbare Gate-Array-Zelle mit erweiterter Gate-Elektrode
JP2006019609A (ja) * 2004-07-05 2006-01-19 Hitachi Displays Ltd 画像表示装置
JP2006054073A (ja) * 2004-08-10 2006-02-23 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルの製造方法
KR101064186B1 (ko) * 2005-08-10 2011-09-14 삼성전자주식회사 레벨쉬프터와, 이를 갖는 표시장치
JP2007088364A (ja) 2005-09-26 2007-04-05 Hitachi Displays Ltd 表示装置
CN108172625B (zh) * 2016-12-07 2020-09-29 清华大学 一种逻辑电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312587A (zh) * 1994-08-29 2001-09-12 株式会社半导体能源研究所 用于电子光学器件的半导体电路及其制造方法

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TW272319B (enExample) * 1993-12-20 1996-03-11 Sharp Kk
US6723590B1 (en) * 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
JP3081497B2 (ja) * 1995-03-30 2000-08-28 三洋電機株式会社 表示装置及びその製造方法
JP3870420B2 (ja) * 1995-12-26 2007-01-17 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法、エレクトロルミネッセンス装置の製造方法、表示装置の製造方法、及び電子機器の製造方法
JPH09283438A (ja) * 1996-04-08 1997-10-31 A G Technol Kk 多結晶半導体薄膜、その形成方法、多結晶半導体ｔｆｔ及びｔｆｔ基板
US6190949B1 (en) * 1996-05-22 2001-02-20 Sony Corporation Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof
JPH09321310A (ja) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
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JP5210478B2 (ja) * 2001-08-31 2013-06-12 株式会社半導体エネルギー研究所 表示装置
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
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CN1312587A (zh) * 1994-08-29 2001-09-12 株式会社半导体能源研究所 用于电子光学器件的半导体电路及其制造方法

Also Published As

Publication number Publication date
JP2003179068A (ja) 2003-06-27
KR20030051152A (ko) 2003-06-25
US6713324B2 (en) 2004-03-30
US6949419B2 (en) 2005-09-27
US20050085021A1 (en) 2005-04-21
US20030109074A1 (en) 2003-06-12
TWI268612B (en) 2006-12-11
KR100894945B1 (ko) 2009-04-27
CN1426043A (zh) 2003-06-25
CN101114098A (zh) 2008-01-30
US20040185605A1 (en) 2004-09-23
CN100335956C (zh) 2007-09-05
US7193238B2 (en) 2007-03-20

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EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20080130

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Contract record no.: 2013990000688

Denomination of invention: Image display unit and production method therefor

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