KR100891053B1 - 탄성파 디바이스 및 필터 - Google Patents
탄성파 디바이스 및 필터 Download PDFInfo
- Publication number
- KR100891053B1 KR100891053B1 KR1020070094784A KR20070094784A KR100891053B1 KR 100891053 B1 KR100891053 B1 KR 100891053B1 KR 1020070094784 A KR1020070094784 A KR 1020070094784A KR 20070094784 A KR20070094784 A KR 20070094784A KR 100891053 B1 KR100891053 B1 KR 100891053B1
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- South Korea
- Prior art keywords
- dielectric
- acoustic wave
- wave device
- electrode
- electromechanical coupling
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000003989 dielectric material Substances 0.000 claims description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 26
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000008878 coupling Effects 0.000 abstract description 68
- 238000010168 coupling process Methods 0.000 abstract description 68
- 238000005859 coupling reaction Methods 0.000 abstract description 68
- 239000010408 film Substances 0.000 description 122
- 238000010897 surface acoustic wave method Methods 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 39
- 230000008859 change Effects 0.000 description 33
- 230000009977 dual effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 238000000926 separation method Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
- H03H9/0047—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks
- H03H9/0052—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically cascaded
- H03H9/0057—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically cascaded the balanced terminals being on the same side of the tracks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
- H03H9/6469—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (9)
- 압전 기판과,상기 압전 기판 상에 형성된 제1 유전체와,상기 제1 유전체 상에 형성된 탄성파를 여진하는 전극과,상기 전극을 구성하는 전극 핑거와,상기 전극을 덮도록 형성된 제2 유전체를 구비하고,상기 제1 유전체가 인접하는 상기 전극 핑거간에서 적어도 일부가 분리되어 있으며,상기 제1 유전체의 비유전률이 상기 제2 유전체의 비유전률보다 큰 것을 특징으로 하는 탄성파 디바이스.
- 제1항에 있어서,상기 제1 유전체의 측면과 상기 전극 핑거의 측면이 동일면에 형성되어 있는 것을 특징으로 하는 탄성파 디바이스.
- 삭제
- 제1항 또는 제2항에 있어서,상기 제1 유전체 상면의 상기 제2 유전체의 막 두께가 상기 제1 유전체 상면의 상기 전극의 막 두께보다 두꺼운 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항에 있어서,상기 제1 유전체는 산화 알루미늄막 및 질화 실리콘막 중 어느 한쪽이며, 상기 제2 유전체는 산화 실리콘막인 것을 특징으로 하는 탄성파 디바이스.
- 제4항에 있어서,상기 제2 유전체 상에 제3 유전체를 구비하고,상기 제3 유전체의 음속이 상기 제2 유전체의 음속보다 빠른 것을 특징으로 하는 탄성파 디바이스.
- 제6항에 있어서,상기 제3 유전체는 산화 알루미늄막인 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항에 있어서,상기 압전 기판은 니오븀산 리튬 및 탄탈산 리튬 중 어느 한쪽인 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항의 탄성파 디바이스를 갖는 것을 특징으로 하는 필터.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00252631 | 2006-09-19 | ||
JP2006252631A JP2008078739A (ja) | 2006-09-19 | 2006-09-19 | 弾性波デバイスおよびフィルタ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080026061A KR20080026061A (ko) | 2008-03-24 |
KR100891053B1 true KR100891053B1 (ko) | 2009-03-31 |
Family
ID=39187834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070094784A KR100891053B1 (ko) | 2006-09-19 | 2007-09-18 | 탄성파 디바이스 및 필터 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7659653B2 (ko) |
JP (1) | JP2008078739A (ko) |
KR (1) | KR100891053B1 (ko) |
CN (1) | CN101150302B (ko) |
Families Citing this family (37)
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DE102005055871A1 (de) * | 2005-11-23 | 2007-05-24 | Epcos Ag | Elektroakustisches Bauelement |
WO2008035546A1 (en) * | 2006-09-21 | 2008-03-27 | Murata Manufacturing Co., Ltd. | Elastic boundary wave device |
JP4883089B2 (ja) * | 2006-09-27 | 2012-02-22 | 株式会社村田製作所 | 弾性境界波装置 |
JP4920750B2 (ja) * | 2007-08-14 | 2012-04-18 | 太陽誘電株式会社 | 弾性境界波装置 |
CN101939911A (zh) * | 2008-02-05 | 2011-01-05 | 株式会社村田制作所 | 弹性边界波装置 |
US8508100B2 (en) * | 2008-11-04 | 2013-08-13 | Samsung Electronics Co., Ltd. | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
CN102334289B (zh) | 2009-02-27 | 2015-10-07 | 精工爱普生株式会社 | 表面声波谐振器、表面声波振荡器以及电子设备 |
CN104601141B (zh) | 2009-05-14 | 2017-10-03 | 天工滤波方案日本有限公司 | 天线共用器 |
FR2947398B1 (fr) * | 2009-06-30 | 2013-07-05 | Commissariat Energie Atomique | Dispositif resonant a ondes acoustiques guidees et procede de realisation du dispositif |
JP2011087282A (ja) * | 2009-09-15 | 2011-04-28 | Murata Mfg Co Ltd | 弾性境界波フィルタ及びそれを備える分波器 |
JP2011135244A (ja) * | 2009-12-24 | 2011-07-07 | Panasonic Corp | 弾性波デバイス及びこれを用いたフィルタ、デュプレクサ |
JP5678486B2 (ja) | 2010-06-17 | 2015-03-04 | セイコーエプソン株式会社 | 弾性表面波共振子、弾性表面波発振器および電子機器 |
JP5934464B2 (ja) * | 2010-08-26 | 2016-06-15 | セイコーエプソン株式会社 | 弾性表面波共振子、および弾性表面波発振器、ならびに電子機器 |
JP2012060420A (ja) | 2010-09-09 | 2012-03-22 | Seiko Epson Corp | 弾性表面波デバイス、電子機器及びセンサー装置 |
CN103250348B (zh) * | 2010-12-29 | 2015-09-23 | 株式会社村田制作所 | 弹性表面波装置 |
DE102011011377B4 (de) * | 2011-02-16 | 2016-05-25 | Epcos Ag | Mit akustischen Wellen arbeitendes Bauelement |
DE102011087820A1 (de) * | 2011-12-06 | 2013-06-06 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Akustisches oberflächenwellenbauelement und verfahren zu seiner herstellung |
JP5859355B2 (ja) * | 2012-03-23 | 2016-02-10 | 京セラ株式会社 | 弾性波素子およびそれを用いた弾性波装置 |
WO2014192614A1 (ja) * | 2013-05-27 | 2014-12-04 | 株式会社村田製作所 | 弾性表面波装置 |
CN105612693A (zh) * | 2013-10-09 | 2016-05-25 | 天工松下滤波方案日本有限公司 | 声波元件、以及使用该声波元件的双工器和电子设备 |
JP6335492B2 (ja) * | 2013-11-29 | 2018-05-30 | 太陽誘電株式会社 | 弾性波素子 |
WO2015151706A1 (ja) * | 2014-03-31 | 2015-10-08 | 株式会社村田製作所 | 弾性波装置 |
US20170155373A1 (en) * | 2015-11-30 | 2017-06-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (saw) resonator structure with dielectric material below electrode fingers |
CN208539864U (zh) | 2016-03-08 | 2019-02-22 | 株式会社村田制作所 | 弹性波装置以及双工器 |
JP6556103B2 (ja) * | 2016-06-28 | 2019-08-07 | 太陽誘電株式会社 | 弾性波デバイスの製造方法及び弾性波デバイス |
KR102304886B1 (ko) | 2017-02-22 | 2021-09-24 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성표면파 소자 |
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CN112868177B (zh) | 2018-10-19 | 2024-03-05 | 株式会社村田制作所 | 弹性波装置 |
JP6822613B2 (ja) * | 2018-12-28 | 2021-01-27 | 株式会社村田製作所 | フィルタ装置およびマルチプレクサ |
DE102019124861A1 (de) * | 2019-09-16 | 2021-03-18 | RF360 Europe GmbH | Filterchip und SAW-Resonator erster Art |
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JP4917396B2 (ja) * | 2006-09-25 | 2012-04-18 | 太陽誘電株式会社 | フィルタおよび分波器 |
JP2008109413A (ja) * | 2006-10-25 | 2008-05-08 | Fujitsu Media Device Kk | 弾性波デバイスおよびフィルタ |
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2006
- 2006-09-19 JP JP2006252631A patent/JP2008078739A/ja active Pending
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2007
- 2007-09-18 KR KR1020070094784A patent/KR100891053B1/ko active IP Right Grant
- 2007-09-19 CN CN2007101534415A patent/CN101150302B/zh active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1188101A (ja) | 1997-07-08 | 1999-03-30 | Toshiba Corp | 弾性表面波素子および弾性表面波素子の製造方法 |
KR20040087859A (ko) * | 2002-03-06 | 2004-10-15 | 마츠시타 덴끼 산교 가부시키가이샤 | 탄성표면파 필터, 평형형 회로 및 통신장치 |
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CN101150302B (zh) | 2011-01-26 |
JP2008078739A (ja) | 2008-04-03 |
CN101150302A (zh) | 2008-03-26 |
US20080067891A1 (en) | 2008-03-20 |
KR20080026061A (ko) | 2008-03-24 |
US7659653B2 (en) | 2010-02-09 |
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