KR100870609B1 - 열처리 방법 및 열처리 장치 - Google Patents

열처리 방법 및 열처리 장치 Download PDF

Info

Publication number
KR100870609B1
KR100870609B1 KR1020040078885A KR20040078885A KR100870609B1 KR 100870609 B1 KR100870609 B1 KR 100870609B1 KR 1020040078885 A KR1020040078885 A KR 1020040078885A KR 20040078885 A KR20040078885 A KR 20040078885A KR 100870609 B1 KR100870609 B1 KR 100870609B1
Authority
KR
South Korea
Prior art keywords
heat treatment
temperature
reaction vessel
film
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020040078885A
Other languages
English (en)
Korean (ko)
Other versions
KR20050033469A (ko
Inventor
히시야신고
아오끼기미야
와따나베마사히사
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20050033469A publication Critical patent/KR20050033469A/ko
Application granted granted Critical
Publication of KR100870609B1 publication Critical patent/KR100870609B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020040078885A 2003-10-06 2004-10-05 열처리 방법 및 열처리 장치 Expired - Lifetime KR100870609B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003347420A JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置
JPJP-P-2003-00347420 2003-10-06

Publications (2)

Publication Number Publication Date
KR20050033469A KR20050033469A (ko) 2005-04-12
KR100870609B1 true KR100870609B1 (ko) 2008-11-25

Family

ID=34540002

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040078885A Expired - Lifetime KR100870609B1 (ko) 2003-10-06 2004-10-05 열처리 방법 및 열처리 장치

Country Status (4)

Country Link
US (2) US7563481B2 (https=)
JP (1) JP4342895B2 (https=)
KR (1) KR100870609B1 (https=)
TW (1) TW200522204A (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP5091428B2 (ja) * 2005-06-14 2012-12-05 株式会社東芝 半導体装置の製造方法
JP4901221B2 (ja) * 2006-01-17 2012-03-21 株式会社東芝 半導体装置の製造方法
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
CN101573471A (zh) * 2006-12-29 2009-11-04 3M创新有限公司 固化含有金属烷氧化物的膜的方法
BRPI0720867A2 (pt) * 2006-12-29 2014-03-04 3M Innovative Properties Company. Método para fabricação de filmes inorgânicos ou híbridos inorgânicos/orgânicos
KR100870322B1 (ko) 2007-02-09 2008-11-25 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
KR20080087416A (ko) * 2007-03-27 2008-10-01 주식회사 하이닉스반도체 반도체 메모리 소자의 소자 분리막 형성 방법
JP2009094321A (ja) * 2007-10-10 2009-04-30 Tokyo Electron Ltd ポリシラザン膜の形成方法
JP2011508062A (ja) * 2007-12-28 2011-03-10 スリーエム イノベイティブ プロパティズ カンパニー 可撓性封入フィルムシステム
US8603246B2 (en) * 2008-01-30 2013-12-10 Palo Alto Research Center Incorporated Growth reactor systems and methods for low-temperature synthesis of nanowires
JP5329825B2 (ja) 2008-02-25 2013-10-30 株式会社東芝 半導体装置の製造方法
JP5306669B2 (ja) * 2008-02-29 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜の形成方法およびそれにより形成されたシリカ質膜
KR20170005154A (ko) * 2008-06-30 2017-01-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 무기 또는 무기/유기 혼성 장벽 필름 제조 방법
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置
JP5634366B2 (ja) * 2011-09-26 2014-12-03 株式会社東芝 成膜装置及び半導体装置の製造方法
CN104428877B (zh) * 2012-07-27 2016-12-07 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法
WO2014080874A1 (ja) * 2012-11-22 2014-05-30 信越化学工業株式会社 複合基板の製造方法及び複合基板
WO2014087877A1 (ja) * 2012-12-07 2014-06-12 信越化学工業株式会社 インターポーザー用基板及びその製造方法
US9460997B2 (en) 2013-12-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for semiconductor devices
JP6204213B2 (ja) * 2014-01-28 2017-09-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JPWO2016038664A1 (ja) * 2014-09-08 2017-04-27 三菱電機株式会社 半導体アニール装置
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
WO2017212546A1 (ja) * 2016-06-07 2017-12-14 株式会社日立国際電気 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム
JP7500584B2 (ja) * 2019-02-05 2024-06-17 アプライド マテリアルズ インコーポレイテッド マルチチャネルスプリッタスプール
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11105186A (ja) 1997-09-30 1999-04-20 Tonen Corp 低誘電率シリカ質膜
JP2002025999A (ja) * 2000-07-06 2002-01-25 Jsr Corp 絶縁膜、絶縁膜形成用材料および絶縁膜の形成方法
KR20020068672A (ko) * 2001-02-22 2002-08-28 삼성전자 주식회사 층간 절연막 형성방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969034B2 (ja) * 1993-06-18 1999-11-02 東京エレクトロン株式会社 搬送方法および搬送装置
JP2929260B2 (ja) * 1993-12-31 1999-08-03 東京エレクトロン株式会社 塗布膜形成方法及びその装置
JPH07206410A (ja) * 1994-01-17 1995-08-08 Toshiba Corp シリコン窒化膜の形成方法
US5907382A (en) * 1994-12-20 1999-05-25 Kabushiki Kaisha Toshiba Transparent conductive substrate and display apparatus
US5914151A (en) * 1995-05-29 1999-06-22 Fuji Photo Film Co., Ltd. Method for forming silica protective films
JPH10242139A (ja) * 1997-02-27 1998-09-11 Nec Corp 半導体装置の製造方法
JPH10321719A (ja) 1997-05-19 1998-12-04 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH11105187A (ja) * 1997-09-30 1999-04-20 Tonen Corp 高純度シリカ質膜の形成方法及び高純度シリカ質膜
JPH11162970A (ja) * 1997-11-25 1999-06-18 Sony Corp 酸化膜の形成方法
JP3178412B2 (ja) * 1998-04-27 2001-06-18 日本電気株式会社 トレンチ・アイソレーション構造の形成方法
JP3245136B2 (ja) * 1999-09-01 2002-01-07 キヤノン販売株式会社 絶縁膜の膜質改善方法
US20020020433A1 (en) * 1999-12-28 2002-02-21 Asami Suemura Oxidation apparatus and method of cleaning the same
JP5020425B2 (ja) * 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 微細溝をシリカ質材料で埋封する方法
KR100362834B1 (ko) * 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
KR100783841B1 (ko) * 2000-05-31 2007-12-10 동경 엘렉트론 주식회사 열처리 시스템
DE60126736T2 (de) * 2000-08-31 2007-11-15 Az Electronic Materials Usa Corp. Strahlungsempfindliche polysilazan-zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms
KR100436495B1 (ko) * 2001-06-07 2004-06-22 삼성전자주식회사 스핀온글래스 조성물을 이용한 반도체 장치의 산화실리콘막 형성방법 및 이를 이용한 반도체 장치의 소자분리 방법
JP3421660B2 (ja) * 2001-05-09 2003-06-30 東京エレクトロン株式会社 熱処理装置及びその方法
JP2004273519A (ja) * 2003-03-05 2004-09-30 Clariant (Japan) Kk トレンチ・アイソレーション構造の形成方法
JP3965167B2 (ja) * 2003-07-04 2007-08-29 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11105186A (ja) 1997-09-30 1999-04-20 Tonen Corp 低誘電率シリカ質膜
JP2002025999A (ja) * 2000-07-06 2002-01-25 Jsr Corp 絶縁膜、絶縁膜形成用材料および絶縁膜の形成方法
KR20020068672A (ko) * 2001-02-22 2002-08-28 삼성전자 주식회사 층간 절연막 형성방법

Also Published As

Publication number Publication date
KR20050033469A (ko) 2005-04-12
US8122850B2 (en) 2012-02-28
US20090263292A1 (en) 2009-10-22
TWI362701B (https=) 2012-04-21
JP2005116706A (ja) 2005-04-28
US7563481B2 (en) 2009-07-21
TW200522204A (en) 2005-07-01
US20070231484A1 (en) 2007-10-04
JP4342895B2 (ja) 2009-10-14

Similar Documents

Publication Publication Date Title
KR100870609B1 (ko) 열처리 방법 및 열처리 장치
KR101122347B1 (ko) 절연막의 형성 방법 및 반도체 장치의 제조 방법
JP4694108B2 (ja) 酸化膜形成方法、酸化膜形成装置および電子デバイス材料
US20030068437A1 (en) Method and apparatus for forming insulating film containing silicon oxy-nitride
KR101124869B1 (ko) 실리콘 산화막의 형성 방법 및 장치
CN101192531B (zh) 处理聚硅氮烷膜的方法
US6419985B1 (en) Method for producing insulator film
JP4259247B2 (ja) 成膜方法
JP3578155B2 (ja) 被処理体の酸化方法
KR101234566B1 (ko) 실리콘 산화막의 성막 방법 및 반도체 장치의 제조 방법
EP1742273A1 (en) Method of forming gate insulating film, storage medium and computer program
JP2026063575A (ja) ＳｉＯＣ系膜の改質方法および処理装置
JP3913638B2 (ja) 熱処理方法及び熱処理装置
US20230377953A1 (en) Substrate processing method and substrate processing apparatus
JP2009049217A (ja) 半導体デバイスの製造方法。
KR100219486B1 (ko) 산화막의 형성방법 및 그 장치
JP2009044088A (ja) 半導体装置の製造方法
KR20260046158A (ko) 성막 방법 및 성막 시스템
WO2024204032A1 (ja) 膜形成方法及び基板処理装置
JP2008182194A (ja) 半導体装置の製造方法
US20080206968A1 (en) Manufacturing method of semiconductor device

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20121114

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20131031

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20141103

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20161019

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20171018

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20181030

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20241006

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000