JP4342895B2 - 熱処理方法及び熱処理装置 - Google Patents

熱処理方法及び熱処理装置 Download PDF

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Publication number
JP4342895B2
JP4342895B2 JP2003347420A JP2003347420A JP4342895B2 JP 4342895 B2 JP4342895 B2 JP 4342895B2 JP 2003347420 A JP2003347420 A JP 2003347420A JP 2003347420 A JP2003347420 A JP 2003347420A JP 4342895 B2 JP4342895 B2 JP 4342895B2
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Japan
Prior art keywords
heat treatment
reaction vessel
temperature
water vapor
substrate
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Expired - Fee Related
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JP2003347420A
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English (en)
Japanese (ja)
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JP2005116706A (ja
Inventor
晋吾 菱屋
公也 青木
将久 渡邊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2003347420A priority Critical patent/JP4342895B2/ja
Priority to TW093127787A priority patent/TW200522204A/zh
Priority to US10/956,125 priority patent/US7563481B2/en
Priority to KR1020040078885A priority patent/KR100870609B1/ko
Publication of JP2005116706A publication Critical patent/JP2005116706A/ja
Priority to US12/496,349 priority patent/US8122850B2/en
Application granted granted Critical
Publication of JP4342895B2 publication Critical patent/JP4342895B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003347420A 2003-10-06 2003-10-06 熱処理方法及び熱処理装置 Expired - Fee Related JP4342895B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003347420A JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置
TW093127787A TW200522204A (en) 2003-10-06 2004-09-14 Method and equipment for heat treatment
US10/956,125 US7563481B2 (en) 2003-10-06 2004-10-04 Method and apparatus for processing polysilazane film
KR1020040078885A KR100870609B1 (ko) 2003-10-06 2004-10-05 열처리 방법 및 열처리 장치
US12/496,349 US8122850B2 (en) 2003-10-06 2009-07-01 Method and apparatus for processing polysilazane film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003347420A JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置

Publications (2)

Publication Number Publication Date
JP2005116706A JP2005116706A (ja) 2005-04-28
JP4342895B2 true JP4342895B2 (ja) 2009-10-14

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Family Applications (1)

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JP2003347420A Expired - Fee Related JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置

Country Status (4)

Country Link
US (2) US7563481B2 (https=)
JP (1) JP4342895B2 (https=)
KR (1) KR100870609B1 (https=)
TW (1) TW200522204A (https=)

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JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP5091428B2 (ja) * 2005-06-14 2012-12-05 株式会社東芝 半導体装置の製造方法
JP4901221B2 (ja) * 2006-01-17 2012-03-21 株式会社東芝 半導体装置の製造方法
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
CN101573471A (zh) * 2006-12-29 2009-11-04 3M创新有限公司 固化含有金属烷氧化物的膜的方法
BRPI0720867A2 (pt) * 2006-12-29 2014-03-04 3M Innovative Properties Company. Método para fabricação de filmes inorgânicos ou híbridos inorgânicos/orgânicos
KR100870322B1 (ko) 2007-02-09 2008-11-25 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
KR20080087416A (ko) * 2007-03-27 2008-10-01 주식회사 하이닉스반도체 반도체 메모리 소자의 소자 분리막 형성 방법
JP2009094321A (ja) * 2007-10-10 2009-04-30 Tokyo Electron Ltd ポリシラザン膜の形成方法
JP2011508062A (ja) * 2007-12-28 2011-03-10 スリーエム イノベイティブ プロパティズ カンパニー 可撓性封入フィルムシステム
US8603246B2 (en) * 2008-01-30 2013-12-10 Palo Alto Research Center Incorporated Growth reactor systems and methods for low-temperature synthesis of nanowires
JP5329825B2 (ja) 2008-02-25 2013-10-30 株式会社東芝 半導体装置の製造方法
JP5306669B2 (ja) * 2008-02-29 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜の形成方法およびそれにより形成されたシリカ質膜
KR20170005154A (ko) * 2008-06-30 2017-01-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 무기 또는 무기/유기 혼성 장벽 필름 제조 방법
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置
JP5634366B2 (ja) * 2011-09-26 2014-12-03 株式会社東芝 成膜装置及び半導体装置の製造方法
CN104428877B (zh) * 2012-07-27 2016-12-07 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法
WO2014080874A1 (ja) * 2012-11-22 2014-05-30 信越化学工業株式会社 複合基板の製造方法及び複合基板
WO2014087877A1 (ja) * 2012-12-07 2014-06-12 信越化学工業株式会社 インターポーザー用基板及びその製造方法
US9460997B2 (en) 2013-12-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for semiconductor devices
JP6204213B2 (ja) * 2014-01-28 2017-09-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JPWO2016038664A1 (ja) * 2014-09-08 2017-04-27 三菱電機株式会社 半導体アニール装置
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
WO2017212546A1 (ja) * 2016-06-07 2017-12-14 株式会社日立国際電気 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム
JP7500584B2 (ja) * 2019-02-05 2024-06-17 アプライド マテリアルズ インコーポレイテッド マルチチャネルスプリッタスプール
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法

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KR100364026B1 (ko) 2001-02-22 2002-12-11 삼성전자 주식회사 층간 절연막 형성방법
JP3421660B2 (ja) * 2001-05-09 2003-06-30 東京エレクトロン株式会社 熱処理装置及びその方法
JP2004273519A (ja) * 2003-03-05 2004-09-30 Clariant (Japan) Kk トレンチ・アイソレーション構造の形成方法
JP3965167B2 (ja) * 2003-07-04 2007-08-29 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
KR20050033469A (ko) 2005-04-12
US8122850B2 (en) 2012-02-28
US20090263292A1 (en) 2009-10-22
TWI362701B (https=) 2012-04-21
JP2005116706A (ja) 2005-04-28
US7563481B2 (en) 2009-07-21
TW200522204A (en) 2005-07-01
KR100870609B1 (ko) 2008-11-25
US20070231484A1 (en) 2007-10-04

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