KR100820992B1 - 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 - Google Patents

실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 Download PDF

Info

Publication number
KR100820992B1
KR100820992B1 KR1020057015194A KR20057015194A KR100820992B1 KR 100820992 B1 KR100820992 B1 KR 100820992B1 KR 1020057015194 A KR1020057015194 A KR 1020057015194A KR 20057015194 A KR20057015194 A KR 20057015194A KR 100820992 B1 KR100820992 B1 KR 100820992B1
Authority
KR
South Korea
Prior art keywords
silica
film
composition
component
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057015194A
Other languages
English (en)
Korean (ko)
Other versions
KR20050095788A (ko
Inventor
하루아키 사쿠라이
코이치 아베
카즈히로 에노모토
시게루 노베
Original Assignee
히다치 가세고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히다치 가세고교 가부시끼가이샤 filed Critical 히다치 가세고교 가부시끼가이샤
Publication of KR20050095788A publication Critical patent/KR20050095788A/ko
Application granted granted Critical
Publication of KR100820992B1 publication Critical patent/KR100820992B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02Polysilicates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Organic Insulating Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
KR1020057015194A 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 Expired - Fee Related KR100820992B1 (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00052025 2002-02-27
JP2002052025 2002-02-27
JP2002060615 2002-03-06
JPJP-P-2002-00060615 2002-03-06
JPJP-P-2002-00060622 2002-03-06
JPJP-P-2002-00060620 2002-03-06
JP2002060620 2002-03-06
JP2002060622 2002-03-06
JPJP-P-2002-00127012 2002-04-26
JP2002127012 2002-04-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7013253A Division KR20040094732A (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품

Publications (2)

Publication Number Publication Date
KR20050095788A KR20050095788A (ko) 2005-09-30
KR100820992B1 true KR100820992B1 (ko) 2008-04-10

Family

ID=27767938

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020057015194A Expired - Fee Related KR100820992B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR10-2004-7013253A Ceased KR20040094732A (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020047019649A Expired - Fee Related KR100819226B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020077005209A Expired - Fee Related KR100795251B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR10-2004-7013253A Ceased KR20040094732A (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020047019649A Expired - Fee Related KR100819226B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020077005209A Expired - Fee Related KR100795251B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품

Country Status (7)

Country Link
US (1) US7358300B2 (enExample)
JP (3) JP4151579B2 (enExample)
KR (4) KR100820992B1 (enExample)
CN (2) CN100491486C (enExample)
AU (1) AU2003211343A1 (enExample)
TW (3) TW200600557A (enExample)
WO (1) WO2003072668A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744077B2 (ja) * 2003-12-18 2011-08-10 京セラ株式会社 シロキサンポリマ皮膜形成方法および光導波路の作製方法
JP2005181871A (ja) * 2003-12-22 2005-07-07 Kyocera Corp 光導波路基板
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20060047034A1 (en) * 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
WO2006068181A1 (ja) * 2004-12-21 2006-06-29 Hitachi Chemical Company, Ltd. 被膜、シリカ系被膜及びその形成方法、シリカ系被膜形成用組成物、並びに電子部品
JP2006213908A (ja) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
JP2007031697A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 被アルカリ処理被膜形成用組成物、被アルカリ処理被膜及びその製造方法、積層体、反射防止膜、並びに電子部品
JP2007031696A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 樹脂組成物、シリカ系被膜及びその製造方法、積層体、並びに、電子部品
JP2007241018A (ja) * 2006-03-10 2007-09-20 Epson Toyocom Corp 全反射ミラー
JP5127277B2 (ja) * 2007-04-05 2013-01-23 新日鉄住金マテリアルズ株式会社 表面平坦性絶縁膜形成用塗布溶液、表面平坦性絶縁膜被覆基材、及び表面平坦性絶縁膜被覆基材の製造方法
US9040164B2 (en) * 2008-12-05 2015-05-26 Axalta Coating Systems Ip Co., Llc Self-assembled silica condensates
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US9017933B2 (en) * 2010-03-29 2015-04-28 Tokyo Electron Limited Method for integrating low-k dielectrics
JP2012049300A (ja) * 2010-08-26 2012-03-08 Nippon Zeon Co Ltd 半導体素子基板
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9273215B2 (en) * 2012-10-30 2016-03-01 Rohm And Haas Electronic Materials Llc Adhesion promoter
US9196849B2 (en) * 2013-01-09 2015-11-24 Research & Business Foundation Sungkyunkwan University Polymer/inorganic multi-layer encapsulation film
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
KR101506801B1 (ko) * 2013-08-19 2015-03-30 성균관대학교산학협력단 고강도 저유전 플라즈마 중합체 박막 및 그 제조 방법
US9153357B1 (en) * 2014-03-27 2015-10-06 Rohm And Haas Electronic Materials Llc Adhesion promoter
JP6451376B2 (ja) * 2015-01-20 2019-01-16 三菱マテリアル株式会社 低屈折率膜形成用液組成物
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US11747341B2 (en) 2019-03-04 2023-09-05 Waters Technologies Corporation Methods of use for low-bind polypropylene plates and vials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299316A (ja) * 1999-04-12 2000-10-24 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001002994A (ja) * 1999-06-24 2001-01-09 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001055554A (ja) * 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914427A1 (de) * 1979-04-10 1980-10-23 Bayer Ag Beschichtung fuer thermoplasten
US5820923A (en) 1992-11-02 1998-10-13 Dow Corning Corporation Curing silica precursors by exposure to nitrous oxide
WO1996000758A1 (en) * 1994-06-30 1996-01-11 Hitachi Chemical Company, Ltd. Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device
JP3824334B2 (ja) 1995-08-07 2006-09-20 東京応化工業株式会社 シリカ系被膜形成用塗布液及び被膜形成方法
US6159546A (en) 1996-02-28 2000-12-12 Nippon Shokubai Co., Ltd. Process of continuously coating an organometallic coating composition on a running substrate
US5880187A (en) * 1996-04-24 1999-03-09 Toyota Jidosha Kabushiki Kaisha Top coating compositions
US6586104B2 (en) * 1996-06-24 2003-07-01 Catalysts & Chemicals Industries Co., Ltd. Coating liquid for forming a transparent coating and substrate with a transparent coating
WO1998026019A1 (en) * 1996-12-13 1998-06-18 Matsushita Electric Works, Ltd. Silicone emulsion coating composition and processes for the preparation thereof
JP4321686B2 (ja) 1998-04-24 2009-08-26 旭化成株式会社 有機−無機複合体および多孔質ケイ素酸化物の製造方法
JPH11322992A (ja) 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
JP2000049155A (ja) 1998-07-31 2000-02-18 Hitachi Chem Co Ltd 半導体装置
JP2000290590A (ja) 1999-04-12 2000-10-17 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP4096138B2 (ja) * 1999-04-12 2008-06-04 Jsr株式会社 レジスト下層膜用組成物の製造方法
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US20040253462A1 (en) 1999-09-16 2004-12-16 Hitachi Chemical Co., Ltd. Composition, methods for forming low-permittivity film using the composition, low-permittivity film, and electronic part having the low-permittivity film
TWI260332B (en) 1999-09-16 2006-08-21 Hitachi Chemical Co Ltd Compositions, methods of forming low dielectric coefficient film using the composition, low dielectric coefficient films, and electronic components having the film
JP2001098218A (ja) * 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP2001351911A (ja) 2000-04-03 2001-12-21 Ulvac Japan Ltd 多孔質sog膜の作製方法
US7265062B2 (en) 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
JP4574054B2 (ja) 2000-04-28 2010-11-04 三井化学株式会社 撥水性多孔質シリカ、その製造方法および用途
US6503633B2 (en) * 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
JP2002020689A (ja) 2000-07-07 2002-01-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4697363B2 (ja) * 2000-08-21 2011-06-08 Jsr株式会社 膜形成用組成物および絶縁膜形成用材料
JP2002129103A (ja) 2000-10-23 2002-05-09 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6947651B2 (en) * 2001-05-10 2005-09-20 Georgia Tech Research Corporation Optical waveguides formed from nano air-gap inter-layer dielectric materials and methods of fabrication thereof
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
JP2003041191A (ja) * 2001-07-30 2003-02-13 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2003064307A (ja) * 2001-08-28 2003-03-05 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP4972834B2 (ja) * 2001-08-28 2012-07-11 日立化成工業株式会社 シロキサン樹脂
US7419772B2 (en) * 2001-11-21 2008-09-02 University Of Massachusetts Mesoporous materials and methods
JP3702842B2 (ja) 2001-12-04 2005-10-05 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品
JP2005522877A (ja) * 2002-04-10 2005-07-28 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用の多孔質シリカ誘電体のための新規なポロジェン
CN1669130A (zh) 2002-09-20 2005-09-14 霍尼韦尔国际公司 用于低介电常数材料的夹层增粘剂

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299316A (ja) * 1999-04-12 2000-10-24 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001002994A (ja) * 1999-06-24 2001-01-09 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001055554A (ja) * 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料

Also Published As

Publication number Publication date
JP4151579B2 (ja) 2008-09-17
JP2008195945A (ja) 2008-08-28
CN1639283A (zh) 2005-07-13
KR20070038574A (ko) 2007-04-10
KR20050095788A (ko) 2005-09-30
KR100795251B1 (ko) 2008-01-15
TW200600557A (en) 2006-01-01
AU2003211343A1 (en) 2003-09-09
TWI304434B (enExample) 2008-12-21
JP2008297550A (ja) 2008-12-11
US7358300B2 (en) 2008-04-15
CN1320073C (zh) 2007-06-06
KR100819226B1 (ko) 2008-04-02
KR20040094732A (ko) 2004-11-10
TW200514828A (en) 2005-05-01
CN1637097A (zh) 2005-07-13
TW200400237A (en) 2004-01-01
TWI297718B (enExample) 2008-06-11
CN100491486C (zh) 2009-05-27
JPWO2003072668A1 (ja) 2005-06-23
TWI297717B (enExample) 2008-06-11
US20050119394A1 (en) 2005-06-02
KR20050008780A (ko) 2005-01-21
JP4169088B2 (ja) 2008-10-22
WO2003072668A1 (fr) 2003-09-04

Similar Documents

Publication Publication Date Title
KR100820992B1 (ko) 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
JP3674041B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP3966026B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
JP4110797B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2003171616A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
US7687590B2 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
US7682701B2 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP4110796B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP5143335B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2008050610A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
JP5143334B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005136429A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005042118A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2005105283A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005105281A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005105282A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2003253203A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP3900915B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP4110798B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2007291167A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2012188668A (ja) シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2003174023A (ja) 層間絶縁膜形成用組成物、層間絶縁膜の製造方法及び電子部品
JP2004189969A (ja) シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2005042123A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005139447A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

St.27 status event code: A-0-1-A10-A18-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R11-asn-PN2301

St.27 status event code: A-3-3-R10-R13-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20130322

Year of fee payment: 6

PR1001 Payment of annual fee

Fee payment year number: 6

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20140324

Year of fee payment: 7

PR1001 Payment of annual fee

Fee payment year number: 7

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 8

St.27 status event code: A-4-4-U10-U11-oth-PR1001

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Not in force date: 20160403

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160403

St.27 status event code: N-4-6-H10-H13-oth-PC1903

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000