AU2003211343A1 - Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts - Google Patents

Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts

Info

Publication number
AU2003211343A1
AU2003211343A1 AU2003211343A AU2003211343A AU2003211343A1 AU 2003211343 A1 AU2003211343 A1 AU 2003211343A1 AU 2003211343 A AU2003211343 A AU 2003211343A AU 2003211343 A AU2003211343 A AU 2003211343A AU 2003211343 A1 AU2003211343 A1 AU 2003211343A1
Authority
AU
Australia
Prior art keywords
coating film
based coating
silica based
preparation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003211343A
Other languages
English (en)
Inventor
Kouichi Abe
Kazuhiro Enomoto
Shigeru Nobe
Haruaki Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of AU2003211343A1 publication Critical patent/AU2003211343A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Organic Insulating Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
AU2003211343A 2002-02-27 2003-02-26 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts Abandoned AU2003211343A1 (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2002052025 2002-02-27
JP2002-52025 2002-02-27
JP2002060622 2002-03-06
JP2002060615 2002-03-06
JP2002-60615 2002-03-06
JP2002-60620 2002-03-06
JP2002060620 2002-03-06
JP2002-60622 2002-03-06
JP2002127012 2002-04-26
JP2002-127012 2002-04-26
PCT/JP2003/002157 WO2003072668A1 (fr) 2002-02-27 2003-02-26 Composition permettant de former un film de revetement a base de silice, film de revetement a base de silice, procede de preparation associe et parties electroniques

Publications (1)

Publication Number Publication Date
AU2003211343A1 true AU2003211343A1 (en) 2003-09-09

Family

ID=27767938

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003211343A Abandoned AU2003211343A1 (en) 2002-02-27 2003-02-26 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts

Country Status (7)

Country Link
US (1) US7358300B2 (enExample)
JP (3) JP4151579B2 (enExample)
KR (4) KR20040094732A (enExample)
CN (2) CN1320073C (enExample)
AU (1) AU2003211343A1 (enExample)
TW (3) TW200400237A (enExample)
WO (1) WO2003072668A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744077B2 (ja) * 2003-12-18 2011-08-10 京セラ株式会社 シロキサンポリマ皮膜形成方法および光導波路の作製方法
JP2005181871A (ja) * 2003-12-22 2005-07-07 Kyocera Corp 光導波路基板
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20060047034A1 (en) * 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
KR100996324B1 (ko) * 2004-12-21 2010-11-23 히다치 가세고교 가부시끼가이샤 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막 형성용 조성물, 및 전자부품
JP2006213908A (ja) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
JP2007031697A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 被アルカリ処理被膜形成用組成物、被アルカリ処理被膜及びその製造方法、積層体、反射防止膜、並びに電子部品
JP2007031696A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 樹脂組成物、シリカ系被膜及びその製造方法、積層体、並びに、電子部品
JP2007241018A (ja) * 2006-03-10 2007-09-20 Epson Toyocom Corp 全反射ミラー
JP5127277B2 (ja) * 2007-04-05 2013-01-23 新日鉄住金マテリアルズ株式会社 表面平坦性絶縁膜形成用塗布溶液、表面平坦性絶縁膜被覆基材、及び表面平坦性絶縁膜被覆基材の製造方法
WO2010065169A1 (en) * 2008-12-05 2010-06-10 E. I. Du Pont De Nemours And Company Self-assembled silica condensates
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US20110232677A1 (en) * 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
JP2012049300A (ja) * 2010-08-26 2012-03-08 Nippon Zeon Co Ltd 半導体素子基板
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9273215B2 (en) * 2012-10-30 2016-03-01 Rohm And Haas Electronic Materials Llc Adhesion promoter
US9196849B2 (en) * 2013-01-09 2015-11-24 Research & Business Foundation Sungkyunkwan University Polymer/inorganic multi-layer encapsulation film
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
KR101506801B1 (ko) * 2013-08-19 2015-03-30 성균관대학교산학협력단 고강도 저유전 플라즈마 중합체 박막 및 그 제조 방법
US9153357B1 (en) * 2014-03-27 2015-10-06 Rohm And Haas Electronic Materials Llc Adhesion promoter
JP6451376B2 (ja) * 2015-01-20 2019-01-16 三菱マテリアル株式会社 低屈折率膜形成用液組成物
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US11747341B2 (en) 2019-03-04 2023-09-05 Waters Technologies Corporation Methods of use for low-bind polypropylene plates and vials

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914427A1 (de) * 1979-04-10 1980-10-23 Bayer Ag Beschichtung fuer thermoplasten
US5820923A (en) 1992-11-02 1998-10-13 Dow Corning Corporation Curing silica precursors by exposure to nitrous oxide
WO1996000758A1 (en) * 1994-06-30 1996-01-11 Hitachi Chemical Company, Ltd. Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device
JP3824334B2 (ja) 1995-08-07 2006-09-20 東京応化工業株式会社 シリカ系被膜形成用塗布液及び被膜形成方法
DE69724494T2 (de) 1996-02-28 2004-07-01 Nippon Shokubai Co., Ltd. Verfahren zur kontinuierlichen Herstellung eines beschichteten Filmes
US5880187A (en) * 1996-04-24 1999-03-09 Toyota Jidosha Kabushiki Kaisha Top coating compositions
JP3984292B2 (ja) * 1996-06-24 2007-10-03 触媒化成工業株式会社 透明被膜形成用塗布液、対明被膜付基材およびその用途
KR100276803B1 (ko) * 1996-12-13 2001-01-15 이마이 기요스케 실리콘 에멀젼 코팅재 조성물과 그것의 제조방법
JP4321686B2 (ja) 1998-04-24 2009-08-26 旭化成株式会社 有機−無機複合体および多孔質ケイ素酸化物の製造方法
JPH11322992A (ja) 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
JP2000049155A (ja) 1998-07-31 2000-02-18 Hitachi Chem Co Ltd 半導体装置
JP4096138B2 (ja) * 1999-04-12 2008-06-04 Ｊｓｒ株式会社 レジスト下層膜用組成物の製造方法
JP2000299316A (ja) * 1999-04-12 2000-10-24 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2000290590A (ja) 1999-04-12 2000-10-17 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001002994A (ja) * 1999-06-24 2001-01-09 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001055554A (ja) * 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
TWI260332B (en) 1999-09-16 2006-08-21 Hitachi Chemical Co Ltd Compositions, methods of forming low dielectric coefficient film using the composition, low dielectric coefficient films, and electronic components having the film
US20040253462A1 (en) 1999-09-16 2004-12-16 Hitachi Chemical Co., Ltd. Composition, methods for forming low-permittivity film using the composition, low-permittivity film, and electronic part having the low-permittivity film
JP2001098218A (ja) * 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP2001351911A (ja) 2000-04-03 2001-12-21 Ulvac Japan Ltd 多孔質ｓｏｇ膜の作製方法
US7265062B2 (en) 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
JP4574054B2 (ja) 2000-04-28 2010-11-04 三井化学株式会社 撥水性多孔質シリカ、その製造方法および用途
KR100661944B1 (ko) * 2000-05-22 2006-12-28 제이에스알 가부시끼가이샤 막 형성용 조성물, 막 형성용 조성물의 제조 방법, 막의형성 방법 및 실리카계 막
JP2002020689A (ja) 2000-07-07 2002-01-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4697363B2 (ja) * 2000-08-21 2011-06-08 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
JP2002129103A (ja) 2000-10-23 2002-05-09 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6947651B2 (en) * 2001-05-10 2005-09-20 Georgia Tech Research Corporation Optical waveguides formed from nano air-gap inter-layer dielectric materials and methods of fabrication thereof
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
JP2003041191A (ja) * 2001-07-30 2003-02-13 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4972834B2 (ja) * 2001-08-28 2012-07-11 日立化成工業株式会社 シロキサン樹脂
JP2003064307A (ja) * 2001-08-28 2003-03-05 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
CA2467703A1 (en) * 2001-11-21 2003-06-05 University Of Massachusetts Mesoporous materials and methods
JP3702842B2 (ja) 2001-12-04 2005-10-05 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品
AU2002309806A1 (en) * 2002-04-10 2003-10-27 Honeywell International, Inc. New porogens for porous silica dielectric for integral circuit applications
US20050173803A1 (en) 2002-09-20 2005-08-11 Victor Lu Interlayer adhesion promoter for low k materials

Also Published As

Publication number Publication date
TWI304434B (enExample) 2008-12-21
US7358300B2 (en) 2008-04-15
KR20040094732A (ko) 2004-11-10
CN1637097A (zh) 2005-07-13
JP2008297550A (ja) 2008-12-11
KR100820992B1 (ko) 2008-04-10
JPWO2003072668A1 (ja) 2005-06-23
CN1320073C (zh) 2007-06-06
TW200600557A (en) 2006-01-01
JP4151579B2 (ja) 2008-09-17
TW200514828A (en) 2005-05-01
CN1639283A (zh) 2005-07-13
KR100795251B1 (ko) 2008-01-15
KR20070038574A (ko) 2007-04-10
KR20050095788A (ko) 2005-09-30
TWI297717B (enExample) 2008-06-11
WO2003072668A1 (fr) 2003-09-04
CN100491486C (zh) 2009-05-27
TW200400237A (en) 2004-01-01
US20050119394A1 (en) 2005-06-02
KR20050008780A (ko) 2005-01-21
KR100819226B1 (ko) 2008-04-02
TWI297718B (enExample) 2008-06-11
JP4169088B2 (ja) 2008-10-22
JP2008195945A (ja) 2008-08-28

Similar Documents

Publication Publication Date Title
AU2003211343A1 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
AU2003262236A1 (en) Composition for forming silicon film and method for forming silicon film
AU2003289354A1 (en) Aqueous intercoating composition and method for forming multilayer coating films
AU2003289383A1 (en) Coating device and coating film forming method
AU2003289431A1 (en) Process for producing photoresist composition, filter, coater and photoresist composition
AU2003234794A1 (en) Composition and method for temporarily fixing solid
AU2002363992A1 (en) Method of powder coating weldable substrates
AU2003292563A1 (en) Coating composition for leather, coating method, and coated leather
AU2003254861A1 (en) Coating composition
EP1593660A4 (en) COATING COMPOSITION FOR GREEN FILM, MANUFACTURING METHOD, GREEN FILM, METHOD OF MANUFACTURING THEREOF, ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR
AU2003276262A1 (en) Laminated system, coating composition and method for the production thereof
AU2003219747A1 (en) Composition and method for coating medical devices
AU2003279124A1 (en) Controls and standards for assays and method for manufacture thereof
AU2003273361A1 (en) Coating compositions for electronic components and other metal surfaces, and methods for making and using the compositions
AU2002950437A0 (en) Zinc Glycerodlate Composition and Method for Manufacture Thereof
AU2003277601A1 (en) Method of forming film on substrate
AU2003266511A1 (en) Thin film and method for manufacturing same
AU2003275264A1 (en) Improved film coater method and apparatus
AU2003295574A1 (en) Method and compositions for temporarily incapaciting subjets
AU2003297440A1 (en) Coating composition
AU2003236166A1 (en) Fully-biodegradable film and its preparation process
AU2002239008A1 (en) Coated article, coating liquid composition, and method for producing coated article
GB2379663B (en) Intermediate coating composition, method for forming multilayered coating films and multilayered coating films
AU2003292754A1 (en) Composition for forming silicon7aluminum film, silicon7aluminum film and method for forming the same
AU2002352120A1 (en) Coating method

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase