TWI297717B - - Google Patents

Download PDF

Info

Publication number
TWI297717B
TWI297717B TW92104285A TW92104285A TWI297717B TW I297717 B TWI297717 B TW I297717B TW 92104285 A TW92104285 A TW 92104285A TW 92104285 A TW92104285 A TW 92104285A TW I297717 B TWI297717 B TW I297717B
Authority
TW
Taiwan
Prior art keywords
atom
film
cerium oxide
component
composition
Prior art date
Application number
TW92104285A
Other languages
English (en)
Chinese (zh)
Other versions
TW200400237A (en
Inventor
Haruaki Sakurai
Kouichi Abe
Kazuhiro Enomoto
Shigeru Nobe
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200400237A publication Critical patent/TW200400237A/zh
Application granted granted Critical
Publication of TWI297717B publication Critical patent/TWI297717B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Organic Insulating Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
TW92104285A 2002-02-27 2003-02-27 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts TW200400237A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002052025 2002-02-27
JP2002060622 2002-03-06
JP2002060615 2002-03-06
JP2002060620 2002-03-06
JP2002127012 2002-04-26

Publications (2)

Publication Number Publication Date
TW200400237A TW200400237A (en) 2004-01-01
TWI297717B true TWI297717B (enExample) 2008-06-11

Family

ID=27767938

Family Applications (3)

Application Number Title Priority Date Filing Date
TW093140080A TW200514828A (en) 2002-02-27 2003-02-27 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic part
TW92104285A TW200400237A (en) 2002-02-27 2003-02-27 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
TW094127342A TW200600557A (en) 2002-02-27 2003-02-27 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW093140080A TW200514828A (en) 2002-02-27 2003-02-27 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic part

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW094127342A TW200600557A (en) 2002-02-27 2003-02-27 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts

Country Status (7)

Country Link
US (1) US7358300B2 (enExample)
JP (3) JP4151579B2 (enExample)
KR (4) KR20040094732A (enExample)
CN (2) CN100491486C (enExample)
AU (1) AU2003211343A1 (enExample)
TW (3) TW200514828A (enExample)
WO (1) WO2003072668A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744077B2 (ja) * 2003-12-18 2011-08-10 京セラ株式会社 シロキサンポリマ皮膜形成方法および光導波路の作製方法
JP2005181871A (ja) * 2003-12-22 2005-07-07 Kyocera Corp 光導波路基板
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20060047034A1 (en) * 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
JP2006213908A (ja) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
US20080260956A1 (en) * 2004-12-21 2008-10-23 Haruaki Sakurai Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
JP2007031697A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 被アルカリ処理被膜形成用組成物、被アルカリ処理被膜及びその製造方法、積層体、反射防止膜、並びに電子部品
JP2007031696A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 樹脂組成物、シリカ系被膜及びその製造方法、積層体、並びに、電子部品
JP2007241018A (ja) * 2006-03-10 2007-09-20 Epson Toyocom Corp 全反射ミラー
JP5127277B2 (ja) * 2007-04-05 2013-01-23 新日鉄住金マテリアルズ株式会社 表面平坦性絶縁膜形成用塗布溶液、表面平坦性絶縁膜被覆基材、及び表面平坦性絶縁膜被覆基材の製造方法
WO2010065169A1 (en) * 2008-12-05 2010-06-10 E. I. Du Pont De Nemours And Company Self-assembled silica condensates
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
JP2012049300A (ja) * 2010-08-26 2012-03-08 Nippon Zeon Co Ltd 半導体素子基板
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9273215B2 (en) * 2012-10-30 2016-03-01 Rohm And Haas Electronic Materials Llc Adhesion promoter
US9196849B2 (en) * 2013-01-09 2015-11-24 Research & Business Foundation Sungkyunkwan University Polymer/inorganic multi-layer encapsulation film
KR101506801B1 (ko) * 2013-08-19 2015-03-30 성균관대학교산학협력단 고강도 저유전 플라즈마 중합체 박막 및 그 제조 방법
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
US9153357B1 (en) * 2014-03-27 2015-10-06 Rohm And Haas Electronic Materials Llc Adhesion promoter
JP6451376B2 (ja) * 2015-01-20 2019-01-16 三菱マテリアル株式会社 低屈折率膜形成用液組成物
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US11747341B2 (en) 2019-03-04 2023-09-05 Waters Technologies Corporation Methods of use for low-bind polypropylene plates and vials

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914427A1 (de) * 1979-04-10 1980-10-23 Bayer Ag Beschichtung fuer thermoplasten
US5820923A (en) 1992-11-02 1998-10-13 Dow Corning Corporation Curing silica precursors by exposure to nitrous oxide
AU3460095A (en) * 1994-06-30 1996-01-25 Hitachi Chemical Company, Ltd. Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device
JP3824334B2 (ja) 1995-08-07 2006-09-20 東京応化工業株式会社 シリカ系被膜形成用塗布液及び被膜形成方法
EP0798054B1 (en) 1996-02-28 2003-09-03 Nippon Shokubai Co., Ltd. Process for producing a coated film continuously
US5880187A (en) * 1996-04-24 1999-03-09 Toyota Jidosha Kabushiki Kaisha Top coating compositions
JP3984292B2 (ja) * 1996-06-24 2007-10-03 触媒化成工業株式会社 透明被膜形成用塗布液、対明被膜付基材およびその用途
EP0887392B1 (en) * 1996-12-13 2002-06-12 Matsushita Electric Works, Ltd. Silicone emulsion coating composition and processes for the preparation thereof
JP4321686B2 (ja) 1998-04-24 2009-08-26 旭化成株式会社 有機−無機複合体および多孔質ケイ素酸化物の製造方法
JPH11322992A (ja) 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
JP2000049155A (ja) 1998-07-31 2000-02-18 Hitachi Chem Co Ltd 半導体装置
JP2000290590A (ja) 1999-04-12 2000-10-17 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2000299316A (ja) * 1999-04-12 2000-10-24 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP4096138B2 (ja) * 1999-04-12 2008-06-04 Ｊｓｒ株式会社 レジスト下層膜用組成物の製造方法
JP2001002994A (ja) * 1999-06-24 2001-01-09 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001055554A (ja) * 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
TWI260332B (en) 1999-09-16 2006-08-21 Hitachi Chemical Co Ltd Compositions, methods of forming low dielectric coefficient film using the composition, low dielectric coefficient films, and electronic components having the film
US20040253462A1 (en) 1999-09-16 2004-12-16 Hitachi Chemical Co., Ltd. Composition, methods for forming low-permittivity film using the composition, low-permittivity film, and electronic part having the low-permittivity film
JP2001098218A (ja) * 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP2001351911A (ja) 2000-04-03 2001-12-21 Ulvac Japan Ltd 多孔質ｓｏｇ膜の作製方法
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US7265062B2 (en) 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
JP4574054B2 (ja) 2000-04-28 2010-11-04 三井化学株式会社 撥水性多孔質シリカ、その製造方法および用途
TW524883B (en) * 2000-05-22 2003-03-21 Jsr Corp Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
JP2002020689A (ja) 2000-07-07 2002-01-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4697363B2 (ja) * 2000-08-21 2011-06-08 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
JP2002129103A (ja) 2000-10-23 2002-05-09 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6947651B2 (en) * 2001-05-10 2005-09-20 Georgia Tech Research Corporation Optical waveguides formed from nano air-gap inter-layer dielectric materials and methods of fabrication thereof
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
JP2003041191A (ja) * 2001-07-30 2003-02-13 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2003064307A (ja) * 2001-08-28 2003-03-05 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP4972834B2 (ja) * 2001-08-28 2012-07-11 日立化成工業株式会社 シロキサン樹脂
AU2002352903A1 (en) * 2001-11-21 2003-06-10 University Of Massachusetts Mesoporous materials and methods
JP3702842B2 (ja) 2001-12-04 2005-10-05 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品
JP2005522877A (ja) * 2002-04-10 2005-07-28 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用の多孔質シリカ誘電体のための新規なポロジェン
US20050173803A1 (en) 2002-09-20 2005-08-11 Victor Lu Interlayer adhesion promoter for low k materials

Also Published As

Publication number Publication date
KR20070038574A (ko) 2007-04-10
TWI297718B (enExample) 2008-06-11
KR20040094732A (ko) 2004-11-10
US7358300B2 (en) 2008-04-15
JP2008297550A (ja) 2008-12-11
JPWO2003072668A1 (ja) 2005-06-23
KR100820992B1 (ko) 2008-04-10
CN1320073C (zh) 2007-06-06
JP4151579B2 (ja) 2008-09-17
TW200600557A (en) 2006-01-01
TW200514828A (en) 2005-05-01
US20050119394A1 (en) 2005-06-02
JP2008195945A (ja) 2008-08-28
JP4169088B2 (ja) 2008-10-22
WO2003072668A1 (fr) 2003-09-04
KR20050008780A (ko) 2005-01-21
KR100819226B1 (ko) 2008-04-02
TW200400237A (en) 2004-01-01
AU2003211343A1 (en) 2003-09-09
CN1637097A (zh) 2005-07-13
KR20050095788A (ko) 2005-09-30
CN100491486C (zh) 2009-05-27
TWI304434B (enExample) 2008-12-21
KR100795251B1 (ko) 2008-01-15
CN1639283A (zh) 2005-07-13

Similar Documents

Publication Publication Date Title
TWI297717B (enExample)
TWI261543B (en) Low dielectric materials and methods for making same
JP2002284998A (ja) シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
TW201920339A (zh) 樹脂組成物、樹脂薄膜、半導體層合體、半導體層合體之製造方法及半導體裝置之製造方法
TW201231586A (en) Adhesive Compositions for a Semiconductor, an Adhesive Sheet for a Semiconductor and a Production Method of a Semiconductor Device
KR100758892B1 (ko) 밀착 강화층 형성용 재료, 밀착 강화층, 반도체 장치 및 그제조 방법
WO2001048806A1 (en) Method of forming low-dielectric-constant film, and semiconductor substrate with low-dielectric-constant film
TW201811671A (zh) 用於形成二氧化矽層的組成物、二氧化矽層和電子裝置
TWI328841B (en) Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
US7687590B2 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
US7682701B2 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP2002201415A (ja) シリカ系被膜形成用塗布液、シリカ系被膜の製造方法及び半導体装置
JP2004307693A (ja) 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2001308089A (ja) 低誘電率膜及びこの低誘電率膜を有する半導体素子
JPH06181201A (ja) 半導体装置の絶縁膜およびその絶縁膜形成用塗布液
JP2008050610A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
CN105695165A (zh) 二氧化硅薄膜用的冲洗溶液、二氧化硅薄膜及其生产方法
JP2001237240A (ja) 低誘電率膜及びこの低誘電率膜を有する半導体素子
JP2011181563A (ja) トレンチ埋め込み用組成物
CN101307209B (zh) 二氧化硅涂膜形成用组合物、二氧化硅涂膜及其制造方法、电子部件
JP2997105B2 (ja) 半導体用絶縁膜等及びそれらの形成方法
JP2003119423A (ja) 半導体用シリカ系被膜形成用塗布液、半導体用シリカ系被膜及び該被膜を用いた半導体装置
KR20170050165A (ko) 실리카 막의 제조방법, 실리카 막 및 전자소자
JP2002009066A (ja) シリカ系被膜及びそれを用いた半導体装置
JP2003243384A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees