KR100818287B1 - 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 - Google Patents

폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 Download PDF

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KR100818287B1
KR100818287B1 KR20070003070A KR20070003070A KR100818287B1 KR 100818287 B1 KR100818287 B1 KR 100818287B1 KR 20070003070 A KR20070003070 A KR 20070003070A KR 20070003070 A KR20070003070 A KR 20070003070A KR 100818287 B1 KR100818287 B1 KR 100818287B1
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South Korea
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layer
forming
insulating layer
heater
amorphous material
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Expired - Fee Related
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KR20070003070A
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English (en)
Korean (ko)
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최준희
안드레이 줄카니브
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삼성전자주식회사
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Priority to KR20070003070A priority Critical patent/KR100818287B1/ko
Priority to US11/882,725 priority patent/US7960220B2/en
Priority to JP2008003574A priority patent/JP5207745B2/ja
Priority to CNA2008101428961A priority patent/CN101320685A/zh
Application granted granted Critical
Publication of KR100818287B1 publication Critical patent/KR100818287B1/ko
Priority to US12/929,587 priority patent/US8445333B2/en
Priority to US13/713,589 priority patent/US9136353B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K29/00—Combinations of writing implements with other articles
    • B43K29/18—Combinations of writing implements with other articles with hand tools, e.g. erasing knives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K24/00—Mechanisms for selecting, projecting, retracting or locking writing units
    • B43K24/10—Mechanisms for selecting, projecting, retracting or locking writing units for selecting, projecting and locking several writing units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K25/00—Attaching writing implements to wearing apparel or objects involving constructional changes of the implements
    • B43K25/02—Clips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43K—IMPLEMENTS FOR WRITING OR DRAWING
    • B43K29/00—Combinations of writing implements with other articles
    • B43K29/02—Combinations of writing implements with other articles with rubbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR20070003070A 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 Expired - Fee Related KR100818287B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR20070003070A KR100818287B1 (ko) 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법
US11/882,725 US7960220B2 (en) 2007-01-10 2007-08-03 Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
JP2008003574A JP5207745B2 (ja) 2007-01-10 2008-01-10 ポリシリコンの形成方法、当該ポリシリコンを備える薄膜トランジスタ及びその形成方法
CNA2008101428961A CN101320685A (zh) 2007-01-10 2008-01-10 形成多晶硅的方法和采用多晶硅的薄膜晶体管及其制法
US12/929,587 US8445333B2 (en) 2007-01-10 2011-02-02 Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
US13/713,589 US9136353B2 (en) 2007-01-10 2012-12-13 Polysilicon-based thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20070003070A KR100818287B1 (ko) 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR100818287B1 true KR100818287B1 (ko) 2008-03-31

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KR20070003070A Expired - Fee Related KR100818287B1 (ko) 2007-01-10 2007-01-10 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법

Country Status (4)

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US (3) US7960220B2 (enExample)
JP (1) JP5207745B2 (enExample)
KR (1) KR100818287B1 (enExample)
CN (1) CN101320685A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7269034B2 (en) 1997-01-24 2007-09-11 Synqor, Inc. High efficiency power converter
KR100818287B1 (ko) * 2007-01-10 2008-03-31 삼성전자주식회사 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법
KR20100086735A (ko) * 2009-01-23 2010-08-02 삼성전자주식회사 실리콘 막 형성 방법, ｐｎ 접합 형성 방법 및 이를 이용하여 형성된 ｐｎ 접합
CN103489762A (zh) * 2012-06-08 2014-01-01 胜华科技股份有限公司 形成多晶硅薄膜的方法
US8951921B2 (en) 2012-06-08 2015-02-10 Wintek Corporation Method of forming thin film poly silicon layer and method of forming thin film transistor
TWI506171B (zh) * 2012-06-08 2015-11-01 Wintek Corp 形成多晶矽薄膜之方法
KR20140104792A (ko) * 2013-02-21 2014-08-29 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
CN105097547A (zh) * 2015-06-01 2015-11-25 合肥京东方光电科技有限公司 多晶硅薄膜晶体管及其制作方法、阵列基板及其制作方法
CN109003941B (zh) * 2018-07-26 2021-01-15 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000001232A (ko) * 1998-06-10 2000-01-15 장진 비정질 막을 결정화하는 방법
KR20000018565A (ko) * 1998-09-03 2000-04-06 최덕균 비정질 실리콘 박막을 결정화하는 방법과이를 이용한 다결정실리콘 박막트랜지스터 제조방법
KR20020058271A (ko) * 2000-12-29 2002-07-12 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183969A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd 電界効果トランジスタ
JPH0722315A (ja) 1991-03-08 1995-01-24 Ricoh Co Ltd 半導体膜の製造方法
JPH05190570A (ja) * 1992-01-17 1993-07-30 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
JPH06120490A (ja) * 1992-10-06 1994-04-28 Hitachi Ltd 半導体装置及びその製造方法
JPH11261073A (ja) * 1998-03-13 1999-09-24 Matsushita Electric Ind Co Ltd 半導体素子および、その加熱方法
US6309951B1 (en) * 1998-06-10 2001-10-30 Lg. Philips Lcd Co., Ltd. Method for crystallizing amorphous silicon
US6261881B1 (en) * 1998-08-21 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
US6558986B1 (en) * 1998-09-03 2003-05-06 Lg.Philips Lcd Co., Ltd Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method
US6297080B1 (en) * 1998-11-09 2001-10-02 Lg. Philips Lcd Co. Ltd. Method of crystallizing a silicon film and a method of manufacturing a liquid crystal display apparatus
KR100317641B1 (ko) * 1999-05-21 2001-12-22 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법
KR100473997B1 (ko) * 2000-10-06 2005-03-07 엘지.필립스 엘시디 주식회사 박막 트랜지스터 제조방법
US6614054B1 (en) * 2000-11-27 2003-09-02 Lg.Philips Lcd Co., Ltd. Polysilicon thin film transistor used in a liquid crystal display and the fabricating method
JP2002289520A (ja) * 2001-03-23 2002-10-04 Japan Science & Technology Corp 薄膜発熱体によるパルス通電熱処理方法及び熱処理装置
KR100525436B1 (ko) 2001-05-25 2005-11-02 엘지.필립스 엘시디 주식회사 다결정화 방법과 이를 이용한 액정표시장치 제조방법
JP3658564B2 (ja) * 2002-01-17 2005-06-08 株式会社東芝 半導体装置
KR100930362B1 (ko) * 2002-11-04 2009-12-08 엘지디스플레이 주식회사 다결정 실리콘막 형성방법과 이를 포함한박막트랜지스터의 제조방법
KR101101456B1 (ko) * 2004-03-09 2012-01-03 이데미쓰 고산 가부시키가이샤 박막 트랜지스터, 박막 트랜지스터 기판, 이들의 제조방법, 이들을 사용한 액정 표시 장치, 관련된 장치 및방법, 및 스퍼터링 타깃, 이것을 사용하여 성막한 투명도전막, 투명 전극, 및 관련된 장치 및 방법
US8003449B2 (en) * 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
KR100776362B1 (ko) 2004-12-03 2007-11-15 네오폴리((주)) 비정질 실리콘 박막의 결정화 방법 및 이를 이용한 다결정 실리콘 박막 트랜지스터의 제조방법
GB0500393D0 (en) * 2005-01-10 2005-02-16 Univ Warwick Microheaters
KR100818287B1 (ko) * 2007-01-10 2008-03-31 삼성전자주식회사 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000001232A (ko) * 1998-06-10 2000-01-15 장진 비정질 막을 결정화하는 방법
KR20000018565A (ko) * 1998-09-03 2000-04-06 최덕균 비정질 실리콘 박막을 결정화하는 방법과이를 이용한 다결정실리콘 박막트랜지스터 제조방법
KR20020058271A (ko) * 2000-12-29 2002-07-12 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법

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Publication number Publication date
JP5207745B2 (ja) 2013-06-12
US20110124184A1 (en) 2011-05-26
JP2008172245A (ja) 2008-07-24
US7960220B2 (en) 2011-06-14
US8445333B2 (en) 2013-05-21
CN101320685A (zh) 2008-12-10
US9136353B2 (en) 2015-09-15
US20130126880A1 (en) 2013-05-23
US20080164475A1 (en) 2008-07-10

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