KR100800397B1 - 탑 코트 조성물 - Google Patents

탑 코트 조성물 Download PDF

Info

Publication number
KR100800397B1
KR100800397B1 KR1020067017757A KR20067017757A KR100800397B1 KR 100800397 B1 KR100800397 B1 KR 100800397B1 KR 1020067017757 A KR1020067017757 A KR 1020067017757A KR 20067017757 A KR20067017757 A KR 20067017757A KR 100800397 B1 KR100800397 B1 KR 100800397B1
Authority
KR
South Korea
Prior art keywords
group
top coat
coat composition
compound
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067017757A
Other languages
English (en)
Korean (ko)
Other versions
KR20070007093A (ko
Inventor
카주히코 마에다
하루히코 코모리야
시니치 수미다
사토루 미야자와
미치타카 우타니
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌트랄 글래스 컴퍼니 리미티드 filed Critical 샌트랄 글래스 컴퍼니 리미티드
Publication of KR20070007093A publication Critical patent/KR20070007093A/ko
Application granted granted Critical
Publication of KR100800397B1 publication Critical patent/KR100800397B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/14Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020067017757A 2004-03-31 2005-03-22 탑 코트 조성물 Expired - Fee Related KR100800397B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004104885 2004-03-31
JPJP-P-2004-00104885 2004-03-31
JP2004201439A JP4484603B2 (ja) 2004-03-31 2004-07-08 トップコート組成物
JPJP-P-2004-00201439 2004-07-08

Publications (2)

Publication Number Publication Date
KR20070007093A KR20070007093A (ko) 2007-01-12
KR100800397B1 true KR100800397B1 (ko) 2008-02-01

Family

ID=35125235

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067017757A Expired - Fee Related KR100800397B1 (ko) 2004-03-31 2005-03-22 탑 코트 조성물

Country Status (6)

Country Link
US (1) US7402626B2 (enExample)
EP (1) EP1720067A4 (enExample)
JP (1) JP4484603B2 (enExample)
KR (1) KR100800397B1 (enExample)
TW (1) TW200604749A (enExample)
WO (1) WO2005098541A1 (enExample)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7125943B2 (en) * 2002-08-07 2006-10-24 Central Glass Company, Limited Fluorine-containing compounds and their polymers useful for anti-reflection film materials and resist compositions
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
EP1708027B1 (en) * 2004-01-15 2019-03-13 JSR Corporation Upper layer film forming composition for liquid immersion and method of forming photoresist pattern
JP4079893B2 (ja) * 2004-02-20 2008-04-23 セントラル硝子株式会社 含フッ素環状化合物、含フッ素高分子化合物、それを用いたレジスト材料及びパターン形成方法
JP3954066B2 (ja) * 2004-02-25 2007-08-08 松下電器産業株式会社 バリア膜形成用材料及びそれを用いたパターン形成方法
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
TWI322334B (en) * 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP2006039129A (ja) * 2004-07-26 2006-02-09 Sony Corp 液浸露光用積層構造、液浸露光方法、電子装置の製造方法及び電子装置
JP4368266B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4697406B2 (ja) * 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物,レジスト保護膜材料及びパターン形成方法
JP4621451B2 (ja) * 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
WO2006051909A1 (ja) * 2004-11-11 2006-05-18 Nikon Corporation 露光方法、デバイス製造方法、及び基板
JP4322205B2 (ja) 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
JP4510644B2 (ja) * 2005-01-11 2010-07-28 東京応化工業株式会社 保護膜形成用材料、積層体およびレジストパターン形成方法
US7799883B2 (en) * 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US7288362B2 (en) * 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance
JP4600112B2 (ja) * 2005-03-24 2010-12-15 Jsr株式会社 液浸用上層膜形成組成物およびフォトレジストパターン形成方法
US7223527B2 (en) * 2005-04-21 2007-05-29 Winbond Electronics Corp. Immersion lithography process, and structure used for the same and patterning process
JP2006301524A (ja) * 2005-04-25 2006-11-02 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料およびこれを用いたレジストパターン形成方法
JP5203575B2 (ja) * 2005-05-04 2013-06-05 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. コーティング組成物
US7161667B2 (en) * 2005-05-06 2007-01-09 Kla-Tencor Technologies Corporation Wafer edge inspection
KR100732289B1 (ko) * 2005-05-30 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 미세 콘택 형성방법
KR100640643B1 (ko) * 2005-06-04 2006-10-31 삼성전자주식회사 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
US8323872B2 (en) * 2005-06-15 2012-12-04 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
US20070087125A1 (en) * 2005-10-14 2007-04-19 Central Glass Company, Limited. Process for producing top coat film used in lithography
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR101306150B1 (ko) 2005-10-24 2013-09-10 삼성전자주식회사 탑 코팅 막용 고분자, 탑 코팅 용액 조성물 및 이를 이용한 이머젼 리소그라피 공정
JP5050855B2 (ja) * 2005-10-27 2012-10-17 Jsr株式会社 上層膜形成組成物およびフォトレジストパターン形成方法
JP5055743B2 (ja) * 2005-11-04 2012-10-24 セントラル硝子株式会社 含フッ素高分子コーティング用組成物、該コーティング用組成物を用いた含フッ素高分子膜の形成方法、ならびにフォトレジストまたはリソグラフィーパターンの形成方法。
JP4687893B2 (ja) * 2005-11-21 2011-05-25 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR101321150B1 (ko) * 2005-11-29 2013-10-22 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 보호막 재료 및 패턴 형성 방법
JP4771083B2 (ja) * 2005-11-29 2011-09-14 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
TWI383996B (zh) * 2006-01-31 2013-02-01 Shinetsu Chemical Co 高分子化合物、光阻保護膜材料及圖型之形成方法
JP5247035B2 (ja) * 2006-01-31 2013-07-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5151038B2 (ja) 2006-02-16 2013-02-27 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP4912733B2 (ja) 2006-02-17 2012-04-11 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
US20070196773A1 (en) * 2006-02-22 2007-08-23 Weigel Scott J Top coat for lithography processes
TWI485064B (zh) * 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
CN102109760B (zh) 2006-03-31 2015-04-15 Jsr株式会社 抗蚀剂图案形成方法
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
US8034532B2 (en) 2006-04-28 2011-10-11 International Business Machines Corporation High contact angle topcoat material and use thereof in lithography process
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
JP4778835B2 (ja) * 2006-05-25 2011-09-21 富士フイルム株式会社 保護膜形成組成物及びそれを用いたパターン形成方法
US7759047B2 (en) * 2006-05-26 2010-07-20 Shin-Etsu Chemical Co., Ltd. Resist protective film composition and patterning process
US7781157B2 (en) * 2006-07-28 2010-08-24 International Business Machines Corporation Method for using compositions containing fluorocarbinols in lithographic processes
JP4799316B2 (ja) * 2006-08-19 2011-10-26 ダイセル化学工業株式会社 レジスト保護膜形成用樹脂組成物及びそれを用いたパターン形成方法
WO2008035640A1 (fr) * 2006-09-20 2008-03-27 Tokyo Ohka Kogyo Co., Ltd. Composition pour la formation d'un film de protection de réserve et procédé de formation de motif de réserve à l'aide de ladite composition
JP4615497B2 (ja) * 2006-09-20 2011-01-19 東京応化工業株式会社 レジスト保護膜形成用組成物及びこれを用いたレジストパターンの形成方法
GB0619043D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Immersion lithographic processing using an acid component source for reducing watermarks
JP4895030B2 (ja) * 2006-10-04 2012-03-14 信越化学工業株式会社 高分子化合物、レジスト保護膜材料、及びパターン形成方法
JP2008088343A (ja) * 2006-10-04 2008-04-17 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料、及びパターン形成方法
JP2008145667A (ja) * 2006-12-08 2008-06-26 Tokyo Ohka Kogyo Co Ltd 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
JP5449675B2 (ja) * 2007-09-21 2014-03-19 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
US8003309B2 (en) 2008-01-16 2011-08-23 International Business Machines Corporation Photoresist compositions and methods of use in high index immersion lithography
JP5381298B2 (ja) * 2008-05-12 2014-01-08 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4650644B2 (ja) * 2008-05-12 2011-03-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2010039260A (ja) * 2008-08-06 2010-02-18 Az Electronic Materials Kk レジスト層上に積層させるのに適当なコーティング組成物
JP5245700B2 (ja) * 2008-08-25 2013-07-24 Jsr株式会社 上層膜形成組成物及び上層膜
JP5556160B2 (ja) * 2008-12-15 2014-07-23 セントラル硝子株式会社 トップコート組成物
KR101343962B1 (ko) 2008-12-15 2013-12-20 샌트랄 글래스 컴퍼니 리미티드 함불소 중합성 단량체, 함불소 중합체, 레지스트 재료 및 패턴 형성 방법 그리고 반도체 장치
KR101413611B1 (ko) 2009-04-21 2014-07-01 샌트랄 글래스 컴퍼니 리미티드 탑코트 조성물 및 패턴 형성 방법
JP2010275498A (ja) 2009-06-01 2010-12-09 Central Glass Co Ltd 含フッ素化合物、含フッ素高分子化合物、レジスト組成物、トップコート組成物及びパターン形成方法
KR20110058128A (ko) * 2009-11-25 2011-06-01 제일모직주식회사 레지스트 보호막용 고분자 및 이를 포함하는 레지스트 보호막 조성물
US8501389B2 (en) 2010-03-23 2013-08-06 Jsr Corporation Upper layer-forming composition and resist patterning method
US8541523B2 (en) 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US8207351B2 (en) 2010-04-30 2012-06-26 International Business Machines Corporation Cyclic carbonyl compounds with pendant carbonate groups, preparations thereof, and polymers therefrom
JP5223892B2 (ja) * 2010-06-30 2013-06-26 Jsr株式会社 パターン形成方法
KR101807198B1 (ko) 2010-11-09 2017-12-11 주식회사 동진쎄미켐 극자외선 리소그라피용 포토레지스트 탑코트 조성물과 이를 이용하는 패턴 형성 방법
JP2013061648A (ja) 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトレジスト上塗り組成物および電子デバイスを形成する方法
JP2013061647A (ja) * 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトリソグラフィ方法
JP5954020B2 (ja) * 2011-09-30 2016-07-20 Jsr株式会社 液浸上層膜形成用組成物及びレジストパターン形成方法
JP6297269B2 (ja) * 2012-06-28 2018-03-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品
US9703200B2 (en) * 2013-12-31 2017-07-11 Rohm And Haas Electronic Materials Llc Photolithographic methods
TWI578109B (zh) * 2013-12-31 2017-04-11 羅門哈斯電子材料有限公司 光阻之上塗組成物
TWI582536B (zh) 2014-10-31 2017-05-11 羅門哈斯電子材料有限公司 圖案形成方法
JP6134367B2 (ja) 2014-10-31 2017-05-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC フォトレジスト保護膜組成物
US9951164B2 (en) 2016-08-12 2018-04-24 International Business Machines Corporation Non-ionic aryl ketone based polymeric photo-acid generators

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08305024A (ja) * 1995-05-08 1996-11-22 Mitsubishi Chem Corp リソグラフィーにおける性能向上用塗布組成物および当該塗布組成物を使用したパターン形成方法
JPH09325500A (ja) * 1996-06-07 1997-12-16 Mitsubishi Chem Corp 表面反射防止塗布組成物及びパターン形成方法
WO2002066526A1 (en) * 2001-02-23 2002-08-29 Daikin Industries, Ltd. Ethylenic fluoromonomer containing hydroxyl or fluoroalkylcarbonyl group and fluoropolymer obtained by polymerizing the same
JP2003040840A (ja) * 2001-07-24 2003-02-13 Central Glass Co Ltd 含フッ素重合性単量体およびそれを用いた高分子化合物
JP2004083900A (ja) * 2002-08-07 2004-03-18 Central Glass Co Ltd 含フッ素化合物とその高分子化合物
JP2005029539A (ja) * 2003-07-10 2005-02-03 Central Glass Co Ltd ヘキサフルオロカルビノール基を含有する新規な重合性アクリレート化合物及びそれを用いた高分子化合物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1275666A4 (en) * 2000-04-04 2007-10-24 Daikin Ind Ltd NEW FLUOROPOLYMER WITH ACID-ACTIVE GROUP AND CHEMICALLY REINFORCED PHOTORESIST COMPOSITIONS THAT CONTAIN THEM
US6974657B2 (en) * 2000-10-18 2005-12-13 E. I. Du Pont De Nemours And Company Compositions for microlithography
TW574607B (en) * 2001-06-25 2004-02-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3999030B2 (ja) * 2001-12-13 2007-10-31 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物、反射防止膜材料
US7108951B2 (en) * 2002-02-26 2006-09-19 Fuji Photo Film Co., Ltd. Photosensitive resin composition
WO2003080688A1 (en) * 2002-03-19 2003-10-02 Arch Specialty Chemicals, Inc. A novel process for producing anhydride-containing polymers for radiation sensitive compositions
JP2003295443A (ja) * 2002-04-08 2003-10-15 Sumitomo Chem Co Ltd レジスト組成物
JP4212307B2 (ja) * 2002-06-24 2009-01-21 セントラル硝子株式会社 含フッ素スチレン重合性単量体の製造方法及びそれに使用される中間体化合物
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
JP4697406B2 (ja) * 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物,レジスト保護膜材料及びパターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08305024A (ja) * 1995-05-08 1996-11-22 Mitsubishi Chem Corp リソグラフィーにおける性能向上用塗布組成物および当該塗布組成物を使用したパターン形成方法
JPH09325500A (ja) * 1996-06-07 1997-12-16 Mitsubishi Chem Corp 表面反射防止塗布組成物及びパターン形成方法
WO2002066526A1 (en) * 2001-02-23 2002-08-29 Daikin Industries, Ltd. Ethylenic fluoromonomer containing hydroxyl or fluoroalkylcarbonyl group and fluoropolymer obtained by polymerizing the same
JP2003040840A (ja) * 2001-07-24 2003-02-13 Central Glass Co Ltd 含フッ素重合性単量体およびそれを用いた高分子化合物
JP2004083900A (ja) * 2002-08-07 2004-03-18 Central Glass Co Ltd 含フッ素化合物とその高分子化合物
JP2005029539A (ja) * 2003-07-10 2005-02-03 Central Glass Co Ltd ヘキサフルオロカルビノール基を含有する新規な重合性アクリレート化合物及びそれを用いた高分子化合物

Also Published As

Publication number Publication date
EP1720067A4 (en) 2010-04-28
WO2005098541A1 (ja) 2005-10-20
EP1720067A1 (en) 2006-11-08
TWI305871B (enExample) 2009-02-01
US7402626B2 (en) 2008-07-22
JP4484603B2 (ja) 2010-06-16
US20050250898A1 (en) 2005-11-10
TW200604749A (en) 2006-02-01
JP2005316352A (ja) 2005-11-10
KR20070007093A (ko) 2007-01-12

Similar Documents

Publication Publication Date Title
KR100800397B1 (ko) 탑 코트 조성물
JP4410508B2 (ja) 含フッ素化合物とその高分子化合物
TWI391408B (zh) 正型光阻組成物
JP5018743B2 (ja) 含フッ素化合物とその高分子化合物
JP5151710B2 (ja) 含フッ素化合物、含フッ素高分子化合物、ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR101343962B1 (ko) 함불소 중합성 단량체, 함불소 중합체, 레지스트 재료 및 패턴 형성 방법 그리고 반도체 장치
US7282549B2 (en) Fluorine-containing compounds, fluorine-containing polymerizable monomers, fluorine-containing polymers, dissolution inhibitors, and resist compositions
JP4079799B2 (ja) 含フッ素化合物の製法
KR101331919B1 (ko) 탑코트 조성물, 반도체 장치 제조용의 탑코트 및 반도체 장치
JP4520245B2 (ja) リソグラフィー用トップコート膜の製造方法
KR100790478B1 (ko) 리소그라피용 최상층 코팅 필름 제조 방법
JP4190296B2 (ja) 含フッ素ビニルエーテルを使用した含フッ素共重合体、ならびに含フッ素共重合体を使用したレジスト材料
JP5664319B2 (ja) 含フッ素ラクトンモノマー化合物、含フッ素ラクトンポリマー化合物およびそのレジスト液およびそれを用いたパターン形成方法
JP2004099689A (ja) 含フッ素多環式化合物、それを原料とした高分子化合物、及びそれを用いたフォトレジスト材料
JP3953780B2 (ja) 含フッ素高分子化合物の製造方法
JP2001330955A (ja) ポジ型レジスト組成物およびパターン形成方法
JP5682363B2 (ja) トップコート用組成物およびそれを用いたパターン形成方法
WO2011105399A1 (ja) 含フッ素ラクトンモノマー化合物、含フッ素ラクトンポリマー化合物とそのレジスト液およびトップコート用組成物、およびそれを用いたパターン形成方法
JP4943305B2 (ja) 含フッ素重合性単量体を用いた高分子化合物
JP2009073835A (ja) 含フッ素化合物、溶解抑制剤、それらを用いたレジスト材料
JP2003137939A (ja) 含フッ素高分子化合物および感光性コーティング材料
JP2005099856A (ja) ポジ型レジスト組成物
JP2004155680A (ja) 含フッ素ビニルエーテルおよびそれを使用した含フッ素重合体、ならびに含フッ素重合体を使用したレジスト材料

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20121121

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20131122

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20141121

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20161124

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20180103

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20190103

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20200103

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250129

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250129