KR100787401B1 - 프로브 장치 및 피검사체 검사 방법 - Google Patents

프로브 장치 및 피검사체 검사 방법 Download PDF

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Publication number
KR100787401B1
KR100787401B1 KR1020057013305A KR20057013305A KR100787401B1 KR 100787401 B1 KR100787401 B1 KR 100787401B1 KR 1020057013305 A KR1020057013305 A KR 1020057013305A KR 20057013305 A KR20057013305 A KR 20057013305A KR 100787401 B1 KR100787401 B1 KR 100787401B1
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South Korea
Prior art keywords
probe
delete delete
measuring
probe card
mounting table
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Expired - Fee Related
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KR1020057013305A
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English (en)
Korean (ko)
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KR20050095614A (ko
Inventor
시게카즈 고마츠
다카노리 햐쿠도미
히로미 자야
다카히사 하야시
유키히데 시게노
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동경 엘렉트론 주식회사
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)
KR1020057013305A 2003-01-20 2004-01-16 프로브 장치 및 피검사체 검사 방법 Expired - Fee Related KR100787401B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003011140A JP2004265895A (ja) 2003-01-20 2003-01-20 光学的測長器を備えたプローブ装置及びプローブ検査方法
JPJP-P-2003-00011140 2003-01-20

Publications (2)

Publication Number Publication Date
KR20050095614A KR20050095614A (ko) 2005-09-29
KR100787401B1 true KR100787401B1 (ko) 2007-12-21

Family

ID=32767271

Family Applications (1)

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KR1020057013305A Expired - Fee Related KR100787401B1 (ko) 2003-01-20 2004-01-16 프로브 장치 및 피검사체 검사 방법

Country Status (7)

Country Link
US (1) US7221177B2 (https=)
EP (1) EP1617468A4 (https=)
JP (1) JP2004265895A (https=)
KR (1) KR100787401B1 (https=)
CN (1) CN100395877C (https=)
TW (1) TW200416397A (https=)
WO (1) WO2004066378A1 (https=)

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JP5040190B2 (ja) 2006-06-27 2012-10-03 富士通セミコンダクター株式会社 プローバ装置の制御方法、制御プログラム、およびプローバ装置
US20080024796A1 (en) * 2006-07-31 2008-01-31 Samsung Electronics Co., Ltd. Apparatus and method for sensing the position of a susceptor in semiconductor device manufacturing equipment
KR100790817B1 (ko) * 2006-12-06 2008-01-03 삼성전자주식회사 반도체 제조관리 시스템
KR100779029B1 (ko) * 2006-12-15 2007-11-23 세크론 주식회사 프로브 스테이션 및 이를 이용한 웨이퍼 검사방법
KR100878213B1 (ko) * 2007-06-27 2009-01-13 세크론 주식회사 프로브카드 탐침 위치인지 장치
JP2009276215A (ja) * 2008-05-15 2009-11-26 Tokyo Electron Ltd プローブ装置及びコンタクト位置の補正方法
JP5222038B2 (ja) 2008-06-20 2013-06-26 東京エレクトロン株式会社 プローブ装置
JP5377915B2 (ja) * 2008-09-30 2013-12-25 東京エレクトロン株式会社 検査装置及び検査方法
JP5356769B2 (ja) * 2008-10-15 2013-12-04 東京エレクトロン株式会社 載置台
US8519728B2 (en) * 2008-12-12 2013-08-27 Formfactor, Inc. Compliance control methods and apparatuses
US8120304B2 (en) 2008-12-12 2012-02-21 Formfactor, Inc. Method for improving motion times of a stage
KR101052506B1 (ko) * 2010-06-16 2011-07-29 주식회사 이노비즈 엘이디 검사장치 및 이를 이용한 엘이디 검사방법
CN102350713B (zh) * 2011-08-01 2014-04-02 济南德佳机器控股有限公司 物料优选加工设备及方法
JP5781864B2 (ja) * 2011-08-25 2015-09-24 株式会社日本マイクロニクス 発光素子の検査装置及び検査方法
EP2838107B1 (en) 2013-08-14 2016-06-01 Fei Company Circuit probe for charged particle beam system
US9478237B2 (en) 2013-09-18 2016-10-25 Seagate Technology Llc Work piece contact pad with centering feature
US10281518B2 (en) * 2014-02-25 2019-05-07 Formfactor Beaverton, Inc. Systems and methods for on-wafer dynamic testing of electronic devices
JP6555002B2 (ja) * 2015-08-19 2019-08-07 三星ダイヤモンド工業株式会社 スクライブラインの検査方法
CN106298578A (zh) * 2016-10-21 2017-01-04 安徽鼎晖新能源科技有限公司 一种太阳能电池片测试台
CN107768265B (zh) * 2017-10-16 2021-01-26 德淮半导体有限公司 晶圆测试系统和方法
CN109917194A (zh) 2017-12-13 2019-06-21 清华四川能源互联网研究院 一种用于无线充电测试系统的自动激光距离校准套件
CN109283452A (zh) * 2018-10-19 2019-01-29 义乌臻格科技有限公司 一种激光二极管芯片光电属性检测方法和检测装置
TWI704360B (zh) * 2019-07-09 2020-09-11 致茂電子股份有限公司 覆晶式面射型雷射二極體之晶圓測試裝置
KR102798910B1 (ko) * 2020-08-26 2025-04-22 삼성디스플레이 주식회사 광학 검사 장치 및 광학 검사 방법
TWI794968B (zh) * 2021-09-10 2023-03-01 鴻勁精密股份有限公司 承置器檢知機構及其應用之作業裝置、作業機
WO2026078079A1 (en) * 2024-10-09 2026-04-16 Technoprobe S.P.A. Measurement system provided with means for measuring a distance from the semiconductor wafer
CN119178914B (zh) * 2024-11-22 2025-08-08 杭州广立微电子股份有限公司 探针针压自动控制装置和晶圆接受测试系统

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KR20010039968A (ko) * 1999-10-06 2001-05-15 히가시 데쓰로 프로브 방법 및 장치

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JP2913609B2 (ja) * 1991-03-08 1999-06-28 東京エレクトロン株式会社 プロービング装置、プロービング方法およびプローブカード
JP2895989B2 (ja) * 1991-06-10 1999-05-31 三菱電機株式会社 プローバ装置およびウエハの検査方法
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JP3356683B2 (ja) * 1998-04-04 2002-12-16 東京エレクトロン株式会社 プローブ装置
JP3090132B2 (ja) * 1998-12-18 2000-09-18 株式会社日立製作所 プローブヘッドの製造方法
JP2001358204A (ja) * 2000-06-15 2001-12-26 Tokyo Electron Ltd 検査ステージ
JP4721247B2 (ja) * 2001-03-16 2011-07-13 東京エレクトロン株式会社 プローブ方法及びプローブ装置
US6972578B2 (en) * 2001-11-02 2005-12-06 Formfactor, Inc. Method and system for compensating thermally induced motion of probe cards
JP4357813B2 (ja) 2002-08-23 2009-11-04 東京エレクトロン株式会社 プローブ装置及びプローブ方法

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Also Published As

Publication number Publication date
CN1739194A (zh) 2006-02-22
US7221177B2 (en) 2007-05-22
TWI313751B (https=) 2009-08-21
US20050253613A1 (en) 2005-11-17
EP1617468A4 (en) 2011-03-09
WO2004066378A1 (ja) 2004-08-05
TW200416397A (en) 2004-09-01
EP1617468A1 (en) 2006-01-18
CN100395877C (zh) 2008-06-18
JP2004265895A (ja) 2004-09-24
KR20050095614A (ko) 2005-09-29

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