KR100756587B1 - 반도체디바이스형성방법 - Google Patents

반도체디바이스형성방법

Info

Publication number
KR100756587B1
KR100756587B1 KR1019980051674A KR19980051674A KR100756587B1 KR 100756587 B1 KR100756587 B1 KR 100756587B1 KR 1019980051674 A KR1019980051674 A KR 1019980051674A KR 19980051674 A KR19980051674 A KR 19980051674A KR 100756587 B1 KR100756587 B1 KR 100756587B1
Authority
KR
South Korea
Prior art keywords
capacitor
layer
dielectric layer
forming
capacitor electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980051674A
Other languages
English (en)
Korean (ko)
Other versions
KR19990062635A (ko
Inventor
피터 주르처
로버트 이. 쥬니어 조운즈
파푸 디. 마니아
페이 추
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR19990062635A publication Critical patent/KR19990062635A/ko
Application granted granted Critical
Publication of KR100756587B1 publication Critical patent/KR100756587B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019980051674A 1997-12-22 1998-11-30 반도체디바이스형성방법 Expired - Fee Related KR100756587B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US99553497A 1997-12-22 1997-12-22
US8/995,534 1997-12-22
US08/995,534 1997-12-22
US09/022,756 1998-02-12
US9/022,756 1998-02-12
US09/022,756 US6344413B1 (en) 1997-12-22 1998-02-12 Method for forming a semiconductor device

Publications (2)

Publication Number Publication Date
KR19990062635A KR19990062635A (ko) 1999-07-26
KR100756587B1 true KR100756587B1 (ko) 2008-09-17

Family

ID=26696336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980051674A Expired - Fee Related KR100756587B1 (ko) 1997-12-22 1998-11-30 반도체디바이스형성방법

Country Status (5)

Country Link
US (2) US6344413B1 (https=)
JP (1) JPH11251550A (https=)
KR (1) KR100756587B1 (https=)
CN (1) CN1192435C (https=)
TW (1) TW405254B (https=)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7034353B2 (en) * 1998-02-27 2006-04-25 Micron Technology, Inc. Methods for enhancing capacitors having roughened features to increase charge-storage capacity
US6682970B1 (en) * 1998-02-27 2004-01-27 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6150706A (en) 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
JP3745553B2 (ja) * 1999-03-04 2006-02-15 富士通株式会社 強誘電体キャパシタ、半導体装置の製造方法
US6342711B1 (en) * 1999-03-08 2002-01-29 Advanced Technology Materials, Inc. Confinement of E-fields in high density ferroelectric memory device structures
US6696718B1 (en) * 1999-04-06 2004-02-24 Micron Technology, Inc. Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
US6492241B1 (en) * 2000-04-10 2002-12-10 Micron Technology, Inc. Integrated capacitors fabricated with conductive metal oxides
JP2001308288A (ja) * 2000-04-27 2001-11-02 Sharp Corp 半導体装置の製造方法および半導体装置
DE10022655C2 (de) * 2000-04-28 2002-03-07 Infineon Technologies Ag Verfahren zur Herstellung von Kondensatorstrukturen
DE10022656B4 (de) * 2000-04-28 2006-07-06 Infineon Technologies Ag Verfahren zum Entfernen von Strukturen
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
AU2001286432A1 (en) * 2000-08-14 2002-02-25 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
KR100376266B1 (ko) * 2000-10-20 2003-03-17 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP3624822B2 (ja) 2000-11-22 2005-03-02 株式会社日立製作所 半導体装置およびその製造方法
US6593238B1 (en) * 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
CN1244155C (zh) * 2001-01-15 2006-03-01 松下电器产业株式会社 半导体器件及其制造方法
US6737740B2 (en) * 2001-02-08 2004-05-18 Micron Technology, Inc. High performance silicon contact for flip chip
JP2002252445A (ja) * 2001-02-26 2002-09-06 Nec Toyama Ltd 印刷配線板の製造方法
US6576525B2 (en) * 2001-03-19 2003-06-10 International Business Machines Corporation Damascene capacitor having a recessed plate
KR100359299B1 (en) * 2001-03-26 2002-11-07 Samsung Electronics Co Ltd Semiconductor memory device having resist pattern and method for forming metal contact thereof
US6596579B1 (en) * 2001-04-27 2003-07-22 Lsi Logic Corporation Method of forming analog capacitor dual damascene process
US7781819B2 (en) * 2001-05-31 2010-08-24 Samsung Electronics Co., Ltd. Semiconductor devices having a contact plug and fabrication methods thereof
KR100408410B1 (ko) * 2001-05-31 2003-12-06 삼성전자주식회사 엠아이엠(ｍｉｍ) 커패시터를 갖는 반도체 소자 및 그제조 방법
US6717215B2 (en) * 2001-06-21 2004-04-06 Hewlett-Packard Development Company, L.P. Memory structures
FR2828764B1 (fr) * 2001-08-16 2004-01-23 St Microelectronics Sa Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
US6911689B2 (en) * 2001-09-19 2005-06-28 Texas Instruments Incorporated Versatile system for chromium based diffusion barriers in electrode structures
US6835655B1 (en) 2001-11-26 2004-12-28 Advanced Micro Devices, Inc. Method of implanting copper barrier material to improve electrical performance
US7696092B2 (en) 2001-11-26 2010-04-13 Globalfoundries Inc. Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect
US6703308B1 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of inserting alloy elements to reduce copper diffusion and bulk diffusion
US6703307B2 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of implantation after copper seed deposition
TW544916B (en) * 2002-01-10 2003-08-01 Winbond Electronics Corp Memory device having complex type contact plug and its manufacturing method
DE10201304A1 (de) * 2002-01-15 2003-07-31 Infineon Technologies Ag Nichtflüchtige Halbleiter -Speicherzelle sowie zugehöriges Herstellungsverfahren
US6861349B1 (en) * 2002-05-15 2005-03-01 Advanced Micro Devices, Inc. Method of forming an adhesion layer with an element reactive with a barrier layer
US6657267B1 (en) * 2002-06-06 2003-12-02 Advanced Micro Devices, Inc. Semiconductor device and fabrication technique using a high-K liner for spacer etch stop
JP4376490B2 (ja) * 2002-07-19 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4840794B2 (ja) * 2002-08-30 2011-12-21 国立大学法人東京工業大学 電子デバイスの製造方法
US6841458B2 (en) * 2002-09-12 2005-01-11 Intel Corporation Dopant interface formation
US7735451B2 (en) * 2002-11-15 2010-06-15 Ebara Corporation Substrate processing method and apparatus
US6992344B2 (en) * 2002-12-13 2006-01-31 International Business Machines Corporation Damascene integration scheme for developing metal-insulator-metal capacitors
KR100523658B1 (ko) * 2002-12-30 2005-10-24 동부아남반도체 주식회사 구리 확산 장벽 제조 방법
KR100502669B1 (ko) * 2003-01-28 2005-07-21 주식회사 하이닉스반도체 반도체 메모리소자 및 그 제조 방법
KR100486303B1 (ko) * 2003-02-05 2005-04-29 삼성전자주식회사 집적 회로용 평판형 캐패시터 및 그의 제조방법
US6746900B1 (en) * 2003-02-19 2004-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor device having high-K gate dielectric material
US7060554B2 (en) * 2003-07-11 2006-06-13 Advanced Micro Devices, Inc. PECVD silicon-rich oxide layer for reduced UV charging
US7169706B2 (en) * 2003-10-16 2007-01-30 Advanced Micro Devices, Inc. Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition
CN1610117A (zh) * 2003-10-17 2005-04-27 松下电器产业株式会社 半导体装置及其制造方法
KR100780610B1 (ko) * 2003-11-28 2007-11-29 주식회사 하이닉스반도체 반도체소자 제조 방법
CN100461366C (zh) * 2003-12-30 2009-02-11 中芯国际集成电路制造(上海)有限公司 在集成电路器件的大马士革铜工艺中电容器制造的方法及其结构
KR100560803B1 (ko) * 2004-02-04 2006-03-13 삼성전자주식회사 캐패시터를 갖는 반도체 소자 및 그 제조방법
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
JP4977946B2 (ja) * 2004-06-29 2012-07-18 富士ゼロックス株式会社 インクジェット記録ヘッドの製造方法
KR100601959B1 (ko) * 2004-07-28 2006-07-14 삼성전자주식회사 Ｉｒ-Ｒｕ 합금 전극 및 이를 하부 전극으로 사용한강유전체 캐패시터
EP1624479A3 (en) * 2004-08-05 2008-07-16 Samsung Electronics Co, Ltd Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
KR100684438B1 (ko) * 2004-08-06 2007-02-16 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US7129133B1 (en) * 2004-09-13 2006-10-31 Spansion Llc Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
US7838133B2 (en) * 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7629252B2 (en) * 2005-12-23 2009-12-08 Intel Corporation Conformal electroless deposition of barrier layer materials
US8148223B2 (en) * 2006-05-22 2012-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. 1T MIM memory for embedded ram application in soc
US8084367B2 (en) * 2006-05-24 2011-12-27 Samsung Electronics Co., Ltd Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
JP2008053300A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
KR100879375B1 (ko) * 2007-09-28 2009-01-20 삼성전기주식회사 캐비티 캐패시터가 내장된 인쇄회로기판
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8730647B2 (en) * 2008-02-07 2014-05-20 Ibiden Co., Ltd. Printed wiring board with capacitor
US8198663B2 (en) * 2008-07-29 2012-06-12 International Business Machines Corporation Structure for dual contact trench capacitor and structure thereof
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US10032569B2 (en) * 2009-08-26 2018-07-24 University Of Maryland, College Park Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8143135B2 (en) 2009-10-08 2012-03-27 International Business Machines Corporation Embedded series deep trench capacitors and methods of manufacture
US8570706B2 (en) * 2010-08-23 2013-10-29 Nxp B.V. Tantalum-based electrode stack
JP5845866B2 (ja) * 2011-12-07 2016-01-20 富士通セミコンダクター株式会社 半導体装置の製造方法
US8969170B2 (en) * 2013-03-14 2015-03-03 Globalfoundries Inc. Method of forming a semiconductor structure including a metal-insulator-metal capacitor
US10141353B2 (en) * 2016-05-20 2018-11-27 Qualcomm Incorporated Passive components implemented on a plurality of stacked insulators
KR20190008047A (ko) 2017-07-14 2019-01-23 에스케이하이닉스 주식회사 강유전성 메모리 소자
US11430861B2 (en) 2019-12-27 2022-08-30 Kepler Computing Inc. Ferroelectric capacitor and method of patterning such
US11482528B2 (en) * 2019-12-27 2022-10-25 Kepler Computing Inc. Pillar capacitor and method of fabricating such
US11289497B2 (en) 2019-12-27 2022-03-29 Kepler Computing Inc. Integration method of ferroelectric memory array
DE102020119304B4 (de) * 2019-12-30 2023-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. System-on-chip mit ferroelektrischem direktzugriffsspeicher und abstimmbarem kondensator und verfahren zu deren herstellung
CN111968980B (zh) * 2020-08-26 2021-11-23 无锡拍字节科技有限公司 一种存储器件的制造方法及其电容器
US11792998B1 (en) 2021-06-11 2023-10-17 Kepler Computing Inc. Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas
US20230200079A1 (en) * 2021-12-17 2023-06-22 Intel Corporation Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221198A (ja) * 1994-01-31 1995-08-18 Oki Electric Ind Co Ltd キャパシタの下層電極形成方法
JPH08139293A (ja) * 1994-09-17 1996-05-31 Toshiba Corp 半導体基板
JPH09134999A (ja) * 1995-11-08 1997-05-20 Denso Corp Ｍｉｍキャパシタ及びその製造方法
KR970077670A (ko) * 1996-05-08 1997-12-12 로더리히 네테부쉬; 롤프 옴케 탄화물 또는 붕소화물 배리어층을 가진 커패시터 및 그 제조방법
KR100274917B1 (ko) * 1996-04-23 2001-01-15 포만 제프리 엘 전자디바이스및그의제조방법

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4337476A (en) 1980-08-18 1982-06-29 Bell Telephone Laboratories, Incorporated Silicon rich refractory silicides as gate metal
JPS5950562A (ja) * 1982-09-17 1984-03-23 Toshiba Corp 半導体装置
US4732801A (en) 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
US5169680A (en) 1987-05-07 1992-12-08 Intel Corporation Electroless deposition for IC fabrication
GB2233820A (en) 1989-06-26 1991-01-16 Philips Nv Providing an electrode on a semiconductor device
US5196909A (en) 1989-11-30 1993-03-23 Sgs-Thomson Microelectronics, Inc. Capacitor for DRAM cell
DE4041271C2 (de) 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
US5521418A (en) 1990-07-17 1996-05-28 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing same
US5164808A (en) 1991-08-09 1992-11-17 Radiant Technologies Platinum electrode structure for use in conjunction with ferroelectric materials
JP3207227B2 (ja) 1991-11-08 2001-09-10 ローム株式会社 不揮発性半導体記憶装置
JP3322936B2 (ja) * 1992-03-19 2002-09-09 株式会社東芝 半導体記憶装置
US5191510A (en) 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
US5185689A (en) 1992-04-29 1993-02-09 Motorola Inc. Capacitor having a ruthenate electrode and method of formation
US5428244A (en) 1992-06-29 1995-06-27 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a silicon rich dielectric layer
US5381302A (en) 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5407855A (en) 1993-06-07 1995-04-18 Motorola, Inc. Process for forming a semiconductor device having a reducing/oxidizing conductive material
US5439840A (en) 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5393676A (en) * 1993-09-22 1995-02-28 Advanced Micro Devices, Inc. Method of fabricating semiconductor gate electrode with fluorine migration barrier
JP2897631B2 (ja) 1993-12-28 1999-05-31 日本電気株式会社 半導体集積回路装置および製造方法
KR0171060B1 (ko) * 1993-12-28 1999-03-30 스기야마 카즈히코 반도체장치의 제조방법
US5362665A (en) * 1994-02-14 1994-11-08 Industrial Technology Research Institute Method of making vertical DRAM cross point memory cell
US5793600A (en) 1994-05-16 1998-08-11 Texas Instruments Incorporated Method for forming high dielectric capacitor electrode structure and semiconductor memory devices
US5909043A (en) * 1994-06-02 1999-06-01 Texas Instruments Incorporated Sacrificial oxygen sources to prevent reduction of oxygen containing materials
JP3520114B2 (ja) 1994-07-11 2004-04-19 株式会社ルネサステクノロジ 半導体装置の製造方法
US5489548A (en) 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US6093615A (en) 1994-08-15 2000-07-25 Micron Technology, Inc. Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
US5444013A (en) 1994-11-02 1995-08-22 Micron Technology, Inc. Method of forming a capacitor
US5624865A (en) 1995-10-13 1997-04-29 Micron Technology, Inc. High pressure reoxidation anneal of silicon nitride for reduced thermal budget silicon processing
US5627094A (en) 1995-12-04 1997-05-06 Chartered Semiconductor Manufacturing Pte, Ltd. Stacked container capacitor using chemical mechanical polishing
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5789320A (en) * 1996-04-23 1998-08-04 International Business Machines Corporation Plating of noble metal electrodes for DRAM and FRAM
US5677221A (en) * 1996-06-19 1997-10-14 Vanguard International Semiconductor Corp. Method of manufacture DRAM capacitor with reduced layout area
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
US5932907A (en) * 1996-12-24 1999-08-03 International Business Machines Corporation Method, materials, and structures for noble metal electrode contacts to silicon
US5973351A (en) * 1997-01-22 1999-10-26 International Business Machines Corporation Semiconductor device with high dielectric constant insulator material
US6188120B1 (en) * 1997-02-24 2001-02-13 International Business Machines Corporation Method and materials for through-mask electroplating and selective base removal
JP3886590B2 (ja) * 1997-03-12 2007-02-28 株式会社ルネサステクノロジ 半導体装置およびその製造方法
EP0865079A3 (en) * 1997-03-13 1999-10-20 Applied Materials, Inc. A method for removing redeposited veils from etched platinum surfaces
US5770517A (en) * 1997-03-21 1998-06-23 Advanced Micro Devices, Inc. Semiconductor fabrication employing copper plug formation within a contact area
US6090697A (en) * 1997-06-30 2000-07-18 Texas Instruments Incorporated Etchstop for integrated circuits
US6153490A (en) * 1997-07-01 2000-11-28 Texas Instruments Incorporated Method for forming integrated circuit capacitor and memory
US6191470B1 (en) * 1997-07-08 2001-02-20 Micron Technology, Inc. Semiconductor-on-insulator memory cell with buried word and body lines
US5858846A (en) * 1997-08-04 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Salicide integration method
KR100269878B1 (ko) * 1997-08-22 2000-12-01 윤종용 반도체소자의금속배선형성방법
US5891787A (en) * 1997-09-04 1999-04-06 Advanced Micro Devices, Inc. Semiconductor fabrication employing implantation of excess atoms at the edges of a trench isolation structure
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6117689A (en) * 1997-12-24 2000-09-12 Texas Instruments Incorporated Stable high-dielectric-constant material electrode and method
US6177351B1 (en) * 1997-12-24 2001-01-23 Texas Instruments Incorporated Method and structure for etching a thin film perovskite layer
US5821141A (en) 1998-01-12 1998-10-13 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a cylindrical capacitor in DRAM having pin plug profile
TW373323B (en) * 1998-03-18 1999-11-01 United Microelectronics Corporaiton Dynamic RAM production method
US6391769B1 (en) * 1998-08-19 2002-05-21 Samsung Electronics Co., Ltd. Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby
US6184550B1 (en) * 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers
US6204172B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Low temperature deposition of barrier layers
US6303972B1 (en) * 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221198A (ja) * 1994-01-31 1995-08-18 Oki Electric Ind Co Ltd キャパシタの下層電極形成方法
JPH08139293A (ja) * 1994-09-17 1996-05-31 Toshiba Corp 半導体基板
JPH09134999A (ja) * 1995-11-08 1997-05-20 Denso Corp Ｍｉｍキャパシタ及びその製造方法
KR100274917B1 (ko) * 1996-04-23 2001-01-15 포만 제프리 엘 전자디바이스및그의제조방법
KR970077670A (ko) * 1996-05-08 1997-12-12 로더리히 네테부쉬; 롤프 옴케 탄화물 또는 붕소화물 배리어층을 가진 커패시터 및 그 제조방법

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US6518070B1 (en) 2003-02-11
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