CN1192435C - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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Publication number
CN1192435C
CN1192435C CNB981253857A CN98125385A CN1192435C CN 1192435 C CN1192435 C CN 1192435C CN B981253857 A CNB981253857 A CN B981253857A CN 98125385 A CN98125385 A CN 98125385A CN 1192435 C CN1192435 C CN 1192435C
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CN
China
Prior art keywords
capacitor
layer
insulating layer
capacitor electrode
electrode layer
Prior art date
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Expired - Fee Related
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CNB981253857A
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English (en)
Chinese (zh)
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CN1221221A (zh
Inventor
彼得·泽奇
小罗伯特·E·琼斯
帕浦·D·马尼尔
朱佩
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1221221A publication Critical patent/CN1221221A/zh
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Publication of CN1192435C publication Critical patent/CN1192435C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CNB981253857A 1997-12-22 1998-12-21 半导体器件的制造方法 Expired - Fee Related CN1192435C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US99553497A 1997-12-22 1997-12-22
US995534 1997-12-22
US995,534 1997-12-22
US022756 1998-02-12
US09/022,756 US6344413B1 (en) 1997-12-22 1998-02-12 Method for forming a semiconductor device
US022,756 1998-02-12

Publications (2)

Publication Number Publication Date
CN1221221A CN1221221A (zh) 1999-06-30
CN1192435C true CN1192435C (zh) 2005-03-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB981253857A Expired - Fee Related CN1192435C (zh) 1997-12-22 1998-12-21 半导体器件的制造方法

Country Status (5)

Country Link
US (2) US6344413B1 (https=)
JP (1) JPH11251550A (https=)
KR (1) KR100756587B1 (https=)
CN (1) CN1192435C (https=)
TW (1) TW405254B (https=)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7034353B2 (en) * 1998-02-27 2006-04-25 Micron Technology, Inc. Methods for enhancing capacitors having roughened features to increase charge-storage capacity
US6682970B1 (en) * 1998-02-27 2004-01-27 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6150706A (en) 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
JP3745553B2 (ja) * 1999-03-04 2006-02-15 富士通株式会社 強誘電体キャパシタ、半導体装置の製造方法
US6342711B1 (en) * 1999-03-08 2002-01-29 Advanced Technology Materials, Inc. Confinement of E-fields in high density ferroelectric memory device structures
US6696718B1 (en) * 1999-04-06 2004-02-24 Micron Technology, Inc. Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
US6492241B1 (en) * 2000-04-10 2002-12-10 Micron Technology, Inc. Integrated capacitors fabricated with conductive metal oxides
JP2001308288A (ja) * 2000-04-27 2001-11-02 Sharp Corp 半導体装置の製造方法および半導体装置
DE10022655C2 (de) * 2000-04-28 2002-03-07 Infineon Technologies Ag Verfahren zur Herstellung von Kondensatorstrukturen
DE10022656B4 (de) * 2000-04-28 2006-07-06 Infineon Technologies Ag Verfahren zum Entfernen von Strukturen
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
AU2001286432A1 (en) * 2000-08-14 2002-02-25 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
KR100376266B1 (ko) * 2000-10-20 2003-03-17 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP3624822B2 (ja) 2000-11-22 2005-03-02 株式会社日立製作所 半導体装置およびその製造方法
US6593238B1 (en) * 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
CN1244155C (zh) * 2001-01-15 2006-03-01 松下电器产业株式会社 半导体器件及其制造方法
US6737740B2 (en) * 2001-02-08 2004-05-18 Micron Technology, Inc. High performance silicon contact for flip chip
JP2002252445A (ja) * 2001-02-26 2002-09-06 Nec Toyama Ltd 印刷配線板の製造方法
US6576525B2 (en) * 2001-03-19 2003-06-10 International Business Machines Corporation Damascene capacitor having a recessed plate
KR100359299B1 (en) * 2001-03-26 2002-11-07 Samsung Electronics Co Ltd Semiconductor memory device having resist pattern and method for forming metal contact thereof
US6596579B1 (en) * 2001-04-27 2003-07-22 Lsi Logic Corporation Method of forming analog capacitor dual damascene process
US7781819B2 (en) * 2001-05-31 2010-08-24 Samsung Electronics Co., Ltd. Semiconductor devices having a contact plug and fabrication methods thereof
KR100408410B1 (ko) * 2001-05-31 2003-12-06 삼성전자주식회사 엠아이엠(ｍｉｍ) 커패시터를 갖는 반도체 소자 및 그제조 방법
US6717215B2 (en) * 2001-06-21 2004-04-06 Hewlett-Packard Development Company, L.P. Memory structures
FR2828764B1 (fr) * 2001-08-16 2004-01-23 St Microelectronics Sa Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
US6911689B2 (en) * 2001-09-19 2005-06-28 Texas Instruments Incorporated Versatile system for chromium based diffusion barriers in electrode structures
US6835655B1 (en) 2001-11-26 2004-12-28 Advanced Micro Devices, Inc. Method of implanting copper barrier material to improve electrical performance
US7696092B2 (en) 2001-11-26 2010-04-13 Globalfoundries Inc. Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect
US6703308B1 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of inserting alloy elements to reduce copper diffusion and bulk diffusion
US6703307B2 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of implantation after copper seed deposition
TW544916B (en) * 2002-01-10 2003-08-01 Winbond Electronics Corp Memory device having complex type contact plug and its manufacturing method
DE10201304A1 (de) * 2002-01-15 2003-07-31 Infineon Technologies Ag Nichtflüchtige Halbleiter -Speicherzelle sowie zugehöriges Herstellungsverfahren
US6861349B1 (en) * 2002-05-15 2005-03-01 Advanced Micro Devices, Inc. Method of forming an adhesion layer with an element reactive with a barrier layer
US6657267B1 (en) * 2002-06-06 2003-12-02 Advanced Micro Devices, Inc. Semiconductor device and fabrication technique using a high-K liner for spacer etch stop
JP4376490B2 (ja) * 2002-07-19 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4840794B2 (ja) * 2002-08-30 2011-12-21 国立大学法人東京工業大学 電子デバイスの製造方法
US6841458B2 (en) * 2002-09-12 2005-01-11 Intel Corporation Dopant interface formation
US7735451B2 (en) * 2002-11-15 2010-06-15 Ebara Corporation Substrate processing method and apparatus
US6992344B2 (en) * 2002-12-13 2006-01-31 International Business Machines Corporation Damascene integration scheme for developing metal-insulator-metal capacitors
KR100523658B1 (ko) * 2002-12-30 2005-10-24 동부아남반도체 주식회사 구리 확산 장벽 제조 방법
KR100502669B1 (ko) * 2003-01-28 2005-07-21 주식회사 하이닉스반도체 반도체 메모리소자 및 그 제조 방법
KR100486303B1 (ko) * 2003-02-05 2005-04-29 삼성전자주식회사 집적 회로용 평판형 캐패시터 및 그의 제조방법
US6746900B1 (en) * 2003-02-19 2004-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor device having high-K gate dielectric material
US7060554B2 (en) * 2003-07-11 2006-06-13 Advanced Micro Devices, Inc. PECVD silicon-rich oxide layer for reduced UV charging
US7169706B2 (en) * 2003-10-16 2007-01-30 Advanced Micro Devices, Inc. Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition
CN1610117A (zh) * 2003-10-17 2005-04-27 松下电器产业株式会社 半导体装置及其制造方法
KR100780610B1 (ko) * 2003-11-28 2007-11-29 주식회사 하이닉스반도체 반도체소자 제조 방법
CN100461366C (zh) * 2003-12-30 2009-02-11 中芯国际集成电路制造(上海)有限公司 在集成电路器件的大马士革铜工艺中电容器制造的方法及其结构
KR100560803B1 (ko) * 2004-02-04 2006-03-13 삼성전자주식회사 캐패시터를 갖는 반도체 소자 및 그 제조방법
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
JP4977946B2 (ja) * 2004-06-29 2012-07-18 富士ゼロックス株式会社 インクジェット記録ヘッドの製造方法
KR100601959B1 (ko) * 2004-07-28 2006-07-14 삼성전자주식회사 Ｉｒ-Ｒｕ 합금 전극 및 이를 하부 전극으로 사용한강유전체 캐패시터
EP1624479A3 (en) * 2004-08-05 2008-07-16 Samsung Electronics Co, Ltd Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
KR100684438B1 (ko) * 2004-08-06 2007-02-16 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US7129133B1 (en) * 2004-09-13 2006-10-31 Spansion Llc Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
US7838133B2 (en) * 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7629252B2 (en) * 2005-12-23 2009-12-08 Intel Corporation Conformal electroless deposition of barrier layer materials
US8148223B2 (en) * 2006-05-22 2012-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. 1T MIM memory for embedded ram application in soc
US8084367B2 (en) * 2006-05-24 2011-12-27 Samsung Electronics Co., Ltd Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
JP2008053300A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
KR100879375B1 (ko) * 2007-09-28 2009-01-20 삼성전기주식회사 캐비티 캐패시터가 내장된 인쇄회로기판
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
US8730647B2 (en) * 2008-02-07 2014-05-20 Ibiden Co., Ltd. Printed wiring board with capacitor
US8198663B2 (en) * 2008-07-29 2012-06-12 International Business Machines Corporation Structure for dual contact trench capacitor and structure thereof
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US10032569B2 (en) * 2009-08-26 2018-07-24 University Of Maryland, College Park Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8143135B2 (en) 2009-10-08 2012-03-27 International Business Machines Corporation Embedded series deep trench capacitors and methods of manufacture
US8570706B2 (en) * 2010-08-23 2013-10-29 Nxp B.V. Tantalum-based electrode stack
JP5845866B2 (ja) * 2011-12-07 2016-01-20 富士通セミコンダクター株式会社 半導体装置の製造方法
US8969170B2 (en) * 2013-03-14 2015-03-03 Globalfoundries Inc. Method of forming a semiconductor structure including a metal-insulator-metal capacitor
US10141353B2 (en) * 2016-05-20 2018-11-27 Qualcomm Incorporated Passive components implemented on a plurality of stacked insulators
KR20190008047A (ko) 2017-07-14 2019-01-23 에스케이하이닉스 주식회사 강유전성 메모리 소자
US11430861B2 (en) 2019-12-27 2022-08-30 Kepler Computing Inc. Ferroelectric capacitor and method of patterning such
US11482528B2 (en) * 2019-12-27 2022-10-25 Kepler Computing Inc. Pillar capacitor and method of fabricating such
US11289497B2 (en) 2019-12-27 2022-03-29 Kepler Computing Inc. Integration method of ferroelectric memory array
DE102020119304B4 (de) * 2019-12-30 2023-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. System-on-chip mit ferroelektrischem direktzugriffsspeicher und abstimmbarem kondensator und verfahren zu deren herstellung
CN111968980B (zh) * 2020-08-26 2021-11-23 无锡拍字节科技有限公司 一种存储器件的制造方法及其电容器
US11792998B1 (en) 2021-06-11 2023-10-17 Kepler Computing Inc. Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas
US20230200079A1 (en) * 2021-12-17 2023-06-22 Intel Corporation Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitors

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4337476A (en) 1980-08-18 1982-06-29 Bell Telephone Laboratories, Incorporated Silicon rich refractory silicides as gate metal
JPS5950562A (ja) * 1982-09-17 1984-03-23 Toshiba Corp 半導体装置
US4732801A (en) 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
US5169680A (en) 1987-05-07 1992-12-08 Intel Corporation Electroless deposition for IC fabrication
GB2233820A (en) 1989-06-26 1991-01-16 Philips Nv Providing an electrode on a semiconductor device
US5196909A (en) 1989-11-30 1993-03-23 Sgs-Thomson Microelectronics, Inc. Capacitor for DRAM cell
DE4041271C2 (de) 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
US5521418A (en) 1990-07-17 1996-05-28 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing same
US5164808A (en) 1991-08-09 1992-11-17 Radiant Technologies Platinum electrode structure for use in conjunction with ferroelectric materials
JP3207227B2 (ja) 1991-11-08 2001-09-10 ローム株式会社 不揮発性半導体記憶装置
JP3322936B2 (ja) * 1992-03-19 2002-09-09 株式会社東芝 半導体記憶装置
US5191510A (en) 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
US5185689A (en) 1992-04-29 1993-02-09 Motorola Inc. Capacitor having a ruthenate electrode and method of formation
US5428244A (en) 1992-06-29 1995-06-27 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a silicon rich dielectric layer
US5381302A (en) 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5407855A (en) 1993-06-07 1995-04-18 Motorola, Inc. Process for forming a semiconductor device having a reducing/oxidizing conductive material
US5439840A (en) 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5393676A (en) * 1993-09-22 1995-02-28 Advanced Micro Devices, Inc. Method of fabricating semiconductor gate electrode with fluorine migration barrier
JP2897631B2 (ja) 1993-12-28 1999-05-31 日本電気株式会社 半導体集積回路装置および製造方法
KR0171060B1 (ko) * 1993-12-28 1999-03-30 스기야마 카즈히코 반도체장치의 제조방법
JPH07221198A (ja) * 1994-01-31 1995-08-18 Oki Electric Ind Co Ltd キャパシタの下層電極形成方法
US5362665A (en) * 1994-02-14 1994-11-08 Industrial Technology Research Institute Method of making vertical DRAM cross point memory cell
US5793600A (en) 1994-05-16 1998-08-11 Texas Instruments Incorporated Method for forming high dielectric capacitor electrode structure and semiconductor memory devices
US5909043A (en) * 1994-06-02 1999-06-01 Texas Instruments Incorporated Sacrificial oxygen sources to prevent reduction of oxygen containing materials
JP3520114B2 (ja) 1994-07-11 2004-04-19 株式会社ルネサステクノロジ 半導体装置の製造方法
US5489548A (en) 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US6093615A (en) 1994-08-15 2000-07-25 Micron Technology, Inc. Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
JPH08139293A (ja) * 1994-09-17 1996-05-31 Toshiba Corp 半導体基板
US5444013A (en) 1994-11-02 1995-08-22 Micron Technology, Inc. Method of forming a capacitor
US5624865A (en) 1995-10-13 1997-04-29 Micron Technology, Inc. High pressure reoxidation anneal of silicon nitride for reduced thermal budget silicon processing
JP3539011B2 (ja) * 1995-11-08 2004-06-14 株式会社デンソー Ｍｉｍキャパシタ及びその製造方法
US5627094A (en) 1995-12-04 1997-05-06 Chartered Semiconductor Manufacturing Pte, Ltd. Stacked container capacitor using chemical mechanical polishing
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5757612A (en) * 1996-04-23 1998-05-26 International Business Machines Corporation Structure and fabrication method for non-planar memory elements
US5789320A (en) * 1996-04-23 1998-08-04 International Business Machines Corporation Plating of noble metal electrodes for DRAM and FRAM
DE19618530A1 (de) * 1996-05-08 1997-11-13 Siemens Ag Kondensator mit einer Carbid- oder Boridbarriereschicht
US5677221A (en) * 1996-06-19 1997-10-14 Vanguard International Semiconductor Corp. Method of manufacture DRAM capacitor with reduced layout area
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
US5932907A (en) * 1996-12-24 1999-08-03 International Business Machines Corporation Method, materials, and structures for noble metal electrode contacts to silicon
US5973351A (en) * 1997-01-22 1999-10-26 International Business Machines Corporation Semiconductor device with high dielectric constant insulator material
US6188120B1 (en) * 1997-02-24 2001-02-13 International Business Machines Corporation Method and materials for through-mask electroplating and selective base removal
JP3886590B2 (ja) * 1997-03-12 2007-02-28 株式会社ルネサステクノロジ 半導体装置およびその製造方法
EP0865079A3 (en) * 1997-03-13 1999-10-20 Applied Materials, Inc. A method for removing redeposited veils from etched platinum surfaces
US5770517A (en) * 1997-03-21 1998-06-23 Advanced Micro Devices, Inc. Semiconductor fabrication employing copper plug formation within a contact area
US6090697A (en) * 1997-06-30 2000-07-18 Texas Instruments Incorporated Etchstop for integrated circuits
US6153490A (en) * 1997-07-01 2000-11-28 Texas Instruments Incorporated Method for forming integrated circuit capacitor and memory
US6191470B1 (en) * 1997-07-08 2001-02-20 Micron Technology, Inc. Semiconductor-on-insulator memory cell with buried word and body lines
US5858846A (en) * 1997-08-04 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Salicide integration method
KR100269878B1 (ko) * 1997-08-22 2000-12-01 윤종용 반도체소자의금속배선형성방법
US5891787A (en) * 1997-09-04 1999-04-06 Advanced Micro Devices, Inc. Semiconductor fabrication employing implantation of excess atoms at the edges of a trench isolation structure
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6117689A (en) * 1997-12-24 2000-09-12 Texas Instruments Incorporated Stable high-dielectric-constant material electrode and method
US6177351B1 (en) * 1997-12-24 2001-01-23 Texas Instruments Incorporated Method and structure for etching a thin film perovskite layer
US5821141A (en) 1998-01-12 1998-10-13 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a cylindrical capacitor in DRAM having pin plug profile
TW373323B (en) * 1998-03-18 1999-11-01 United Microelectronics Corporaiton Dynamic RAM production method
US6391769B1 (en) * 1998-08-19 2002-05-21 Samsung Electronics Co., Ltd. Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby
US6184550B1 (en) * 1998-08-28 2001-02-06 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers
US6204172B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Low temperature deposition of barrier layers
US6303972B1 (en) * 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same

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JPH11251550A (ja) 1999-09-17
KR100756587B1 (ko) 2008-09-17
CN1221221A (zh) 1999-06-30
KR19990062635A (ko) 1999-07-26
US6518070B1 (en) 2003-02-11

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