JP5744790B2 - 集積回路とその方法 - Google Patents
集積回路とその方法 Download PDFInfo
- Publication number
- JP5744790B2 JP5744790B2 JP2012122801A JP2012122801A JP5744790B2 JP 5744790 B2 JP5744790 B2 JP 5744790B2 JP 2012122801 A JP2012122801 A JP 2012122801A JP 2012122801 A JP2012122801 A JP 2012122801A JP 5744790 B2 JP5744790 B2 JP 5744790B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- integrated circuit
- electrode
- capacitor
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Description
上記したように、本発明の製造技術は、多くのULSI構造、材料、プロセスと適合性を有する。化学機械研磨に加えて、本発明のキャパシタ構造内に使用される誘電体材料は、標準のVLSIとULSIの構造と、その製造プロセスと適合性を有する。図6に示したキャパシタの形成は、五酸化タンタルを高誘電率(高k材料)として用いる。五酸化タンタルのような金属適合性を有する材料を使用することは特に本発明の利点であり、その理由は、本発明のキャパシタの製造に用いられる堆積技術は、低温(500℃)で行われるからである。従って本発明は上記した理由により埋積型の技術と適合性を有する点でも利点がある。
102 下部キャパシタ電極
203 誘電体の上部表面
204 側壁
405 キャパシタ用誘電体材料層
406 上部電極
408 下部表面
409 プラグ
701 貫通導体
702 ソース
D2 層
Claims (9)
- 上部表面と、1:0.2乃至1:0.3の範囲の深さ対幅のアスペクト比を有する前記上部表面に形成された開口とを有する層と、
前記開口の表面に部分的に形成される下部電極であって、前記下部電極の上端部が前記上部表面下の深さで形成され、前記下部電極はポリシリコンを含まず、
前記下部電極の上と前記層の前記上部表面の上に形成されたポリシリコンによる還元性を有する誘電体材料層と、
前記誘電体材料層の上に形成された上部電極とを有し、
前記上部電極と前記下部電極が、前記層の前記上部表面に沿って重なり合わず、
金属層が、前記上部電極の上に形成されている
ことを特徴とする集積回路。 - 前記誘電体材料層は、酸化タンタルと、窒化チタンと、チタン酸バリウムストロンチウムと、チタン酸鉛ジルコニウムとからなるグループから選択された材料で形成される
ことを特徴とする請求項1記載の集積回路。 - 前記下部電極の組成が、前記上部電極の組成と異なる
ことを特徴とする請求項1記載の集積回路。 - 前記下部電極が導電性プラグへ結合している
ことを特徴とする請求項1記載の集積回路。 - 前記上部表面下の深さが、0.1ミクロン乃至0.2ミクロンの範囲である
ことを特徴とする請求項1記載の集積回路。 - 前記誘電体材料層が、五酸化タンタルを含む
ことを特徴とする請求項1記載の集積回路。 - 前記上部電極が、多層導電体である
ことを特徴とする請求項1記載の集積回路。 - 前記下部電極が、窒化チタンを含む
ことを特徴とする請求項1記載の集積回路。 - 前記金属層が、タングステン金属層である
ことを特徴とする請求項1記載の集積回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/310,388 US6750495B1 (en) | 1999-05-12 | 1999-05-12 | Damascene capacitors for integrated circuits |
US09/310388 | 1999-05-12 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008064008A Division JP2008205481A (ja) | 1999-05-12 | 2008-03-13 | 集積回路とその方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012199572A JP2012199572A (ja) | 2012-10-18 |
JP2012199572A5 JP2012199572A5 (ja) | 2013-09-19 |
JP5744790B2 true JP5744790B2 (ja) | 2015-07-08 |
Family
ID=23202276
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000137225A Pending JP2000332221A (ja) | 1999-05-12 | 2000-05-10 | 集積回路とその方法 |
JP2008064008A Pending JP2008205481A (ja) | 1999-05-12 | 2008-03-13 | 集積回路とその方法 |
JP2012122801A Expired - Lifetime JP5744790B2 (ja) | 1999-05-12 | 2012-05-30 | 集積回路とその方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000137225A Pending JP2000332221A (ja) | 1999-05-12 | 2000-05-10 | 集積回路とその方法 |
JP2008064008A Pending JP2008205481A (ja) | 1999-05-12 | 2008-03-13 | 集積回路とその方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6750495B1 (ja) |
JP (3) | JP2000332221A (ja) |
KR (1) | KR100695028B1 (ja) |
GB (1) | GB2350929B (ja) |
TW (1) | TW463304B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4497260B2 (ja) * | 2000-08-31 | 2010-07-07 | エルピーダメモリ株式会社 | 半導体集積回路装置およびその製造方法 |
KR100414873B1 (ko) * | 2001-05-11 | 2004-01-13 | 주식회사 하이닉스반도체 | 강유전체 메모리소자의 제조 방법 |
US20030052365A1 (en) | 2001-09-18 | 2003-03-20 | Samir Chaudhry | Structure and fabrication method for capacitors integratible with vertical replacement gate transistors |
KR100456577B1 (ko) * | 2002-01-10 | 2004-11-09 | 삼성전자주식회사 | 반도체 장치의 커패시터 및 그 제조 방법 |
US6953724B2 (en) * | 2003-09-25 | 2005-10-11 | International Business Machines Corporation | Self-limited metal recess for deep trench metal fill |
DE102005015138A1 (de) * | 2004-03-31 | 2005-11-03 | Magnachip Semiconductor, Ltd. | Verfahren zur Herstellung eines Halbleiterbauelements |
JP4571836B2 (ja) * | 2004-07-23 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4646595B2 (ja) * | 2004-10-27 | 2011-03-09 | パナソニック株式会社 | 半導体記憶装置 |
FR2885452A1 (fr) * | 2005-05-04 | 2006-11-10 | St Microelectronics Sa | Circuit integre comprenant au moins un condensateur et procede de formation de condensateur |
KR100778850B1 (ko) * | 2005-10-28 | 2007-11-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 커패시터 및 그 형성방법 |
US7880268B2 (en) | 2006-05-12 | 2011-02-01 | Stmicroelectronics S.A. | MIM capacitor |
US8441097B2 (en) * | 2009-12-23 | 2013-05-14 | Intel Corporation | Methods to form memory devices having a capacitor with a recessed electrode |
JP2013098216A (ja) * | 2011-10-28 | 2013-05-20 | Elpida Memory Inc | 半導体装置、メモリカード、データ処理システムおよび半導体装置の製造方法 |
US9991333B1 (en) * | 2017-02-09 | 2018-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-insulator-metal (MIM) capacitor structure and method for forming the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2723530B2 (ja) * | 1988-04-13 | 1998-03-09 | 日本電気株式会社 | ダイナミック型ランダムアクセスメモリ装置の製造方法 |
JPH07114260B2 (ja) * | 1989-11-23 | 1995-12-06 | 財団法人韓国電子通信研究所 | コップ状のポリシリコン貯蔵電極を有するスタック構造のdramセル,およびその製造方法 |
JP3222188B2 (ja) * | 1992-04-14 | 2001-10-22 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
KR960011655B1 (en) | 1993-04-20 | 1996-08-24 | Hyundai Electronics Ind | Dram cell capacitor and the method |
JPH08139293A (ja) * | 1994-09-17 | 1996-05-31 | Toshiba Corp | 半導体基板 |
US5691219A (en) * | 1994-09-17 | 1997-11-25 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor memory device |
DE59510349D1 (de) * | 1995-04-24 | 2002-10-02 | Infineon Technologies Ag | Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung |
JP4167727B2 (ja) * | 1995-11-20 | 2008-10-22 | 株式会社日立製作所 | 半導体記憶装置 |
US5716883A (en) | 1996-11-06 | 1998-02-10 | Vanguard International Semiconductor Corporation | Method of making increased surface area, storage node electrode, with narrow spaces between polysilicon columns |
JPH10173148A (ja) * | 1996-12-13 | 1998-06-26 | Hitachi Ltd | 半導体記憶装置 |
JP3466851B2 (ja) * | 1997-01-20 | 2003-11-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
US5888877A (en) * | 1997-10-28 | 1999-03-30 | Micron Technology, Inc. | Method of forming recessed container cells |
US6057571A (en) * | 1998-03-31 | 2000-05-02 | Lsi Logic Corporation | High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit |
US6017790A (en) * | 1998-07-06 | 2000-01-25 | United Microelectronics Corp. | Method of manufacturing embedded dynamic random access memory |
KR100292938B1 (ko) | 1998-07-16 | 2001-07-12 | 윤종용 | 고집적디램셀커패시터및그의제조방법 |
US6207524B1 (en) * | 1998-09-29 | 2001-03-27 | Siemens Aktiengesellschaft | Memory cell with a stacked capacitor |
JP3189813B2 (ja) | 1998-11-30 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
US6346454B1 (en) | 1999-01-12 | 2002-02-12 | Agere Systems Guardian Corp. | Method of making dual damascene interconnect structure and metal electrode capacitor |
-
1999
- 1999-05-12 US US09/310,388 patent/US6750495B1/en not_active Expired - Lifetime
-
2000
- 2000-03-07 TW TW089104065A patent/TW463304B/zh not_active IP Right Cessation
- 2000-04-18 GB GB0009611A patent/GB2350929B/en not_active Expired - Fee Related
- 2000-05-10 JP JP2000137225A patent/JP2000332221A/ja active Pending
- 2000-05-12 KR KR1020000025275A patent/KR100695028B1/ko not_active IP Right Cessation
-
2008
- 2008-03-13 JP JP2008064008A patent/JP2008205481A/ja active Pending
-
2012
- 2012-05-30 JP JP2012122801A patent/JP5744790B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2012199572A (ja) | 2012-10-18 |
GB2350929A (en) | 2000-12-13 |
GB2350929B (en) | 2002-05-22 |
TW463304B (en) | 2001-11-11 |
JP2000332221A (ja) | 2000-11-30 |
US6750495B1 (en) | 2004-06-15 |
KR100695028B1 (ko) | 2007-03-14 |
GB0009611D0 (en) | 2000-06-07 |
JP2008205481A (ja) | 2008-09-04 |
KR20010014901A (ko) | 2001-02-26 |
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