KR100744215B1 - 기판 열처리 장치 - Google Patents
기판 열처리 장치 Download PDFInfo
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- KR100744215B1 KR100744215B1 KR1020027009638A KR20027009638A KR100744215B1 KR 100744215 B1 KR100744215 B1 KR 100744215B1 KR 1020027009638 A KR1020027009638 A KR 1020027009638A KR 20027009638 A KR20027009638 A KR 20027009638A KR 100744215 B1 KR100744215 B1 KR 100744215B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 238000007669 thermal treatment Methods 0.000 title abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 89
- 230000033001 locomotion Effects 0.000 description 18
- 230000005855 radiation Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (27)
- 챔버 내에서 기판 평면에 필수적으로 평행하게 이동가능한 기판 지지 엘리먼트들(8) 상에 배치되는 기판(1)의 열 처리 장치로서,상기 지지 엘리먼트들(8)은 제 1콘(cone)에 의해 형성된 기판 지지 팁(11)을 구비하며, 상기 제 1콘은 인접한 제 2콘 보다 더 큰 개방각을 갖는, 기판 열 처리 장치.
- 제 1항에 있어서,상기 지지 엘리먼트들(8)은 상기 기판의 중심축에 대해 방사상으로 이동가능한 것을 특징으로 하는 기판 열 처리 장치.
- 제 1항 또는 제 2항에 있어서,상기 지지 엘리먼트들(8)은 탄력성을 가지면서 매달려있는 것을 특징으로 하는 기판 열 처리 장치.
- 제 3항에 있어서,상기 지지 엘리먼트들(8) 각각은 스프링(15)에 연결되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 지지 엘리먼트들은 자신들의 종축(A)에 수직으로 피벗팅 가능한 것을 특징으로 하는 기판 열 처리 장치.
- 제 5항에 있어서,상기 지지 엘리먼트(8)의 상기 종축(A)으로부터 이격되는 피벗 축(B)이 존재하는 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 지지 엘리먼트들(8)은 이동가능한 캐리어 아암들(arms)(25)의 자유 단부들 상에 장착되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 7항에 있어서,상기 캐리어 아암들(25)은 상기 기판 평면에 대해 평행으로 이동가능한 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 지지 엘리먼트들(8)은 가이드 수단(42) 내에 수용되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 9 항에 있어서,상기 가이드 수단(42)은 슬롯인 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 지지 엘리먼트들(8)은 지지 플랜지(support flange)(30)를 구비하는 것을 특징으로 하는 기판 열 처리 장치.
- 제 11항에 있어서,상기 지지 플랜지(30)는 만곡된 지지 표면(31)을 갖는 것을 특징으로 하는 기판 열 처리 장치.
- 제 11 항에 있어서,상기 지지 플랜지(30)는 광 투과성이며, 광학 렌즈로서 구현되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 1항 또는 제 2 항에 있어서,적어도 3개의 상기 캐리어 아암(62)과 그 위에 고정된 상기 지지 엘리먼트들(8)을 가지면서, 이동가능하고, 경사 가능하게 장착된 홀딩 엘리먼트(60)가 제공되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 14항에 있어서,상기 지지 엘리먼트들(8)은 상기 캐리어 아암들(62) 상에 이동가능하고, 피벗팅 가능하게 장착되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 지지 엘리먼트들(8)은 수용 수단 내에 피벗팅 가능하게 수용된 원뿔형의 테이퍼링 된 베이스(tapering base)(13)를 갖는 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1콘은 50°내지 130°의 개방각을 갖는 것을 특징으로 하는 기판 열 처리 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 제 2콘은 5°내지 45°의 개방각을 갖는 것을 특징으로 하는 기판 열 처리 장치.
- 제 14 항에 있어서,상기 지지 엘리먼트들(8) 또는 상기 홀딩 엘리먼트들, 또는 상기 지지 엘리먼트들(8)과 상기 홀딩 엘리먼트들은 상기 기판 반경의 1/2 내지 4/5의 반경을 갖는 원형 상에 배치되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 14 항에 있어서,상기 지지 엘리먼트들(8) 또는 상기 홀딩 엘리먼트들, 또는 상기 지지 엘리먼트들(8)과 상기 홀딩 엘리먼트들은 적어도 부분적으로 광-투과 재료로 이루어지는 것을 특징으로 하는 기판 열 처리 장치.
- 제 14 항에 있어서,상기 지지 엘리먼트들(8) 또는 상기 홀딩 엘리먼트들, 또는 상기 지지 엘리먼트들(8)과 상기 홀딩 엘리먼트들의 표면은 적어도 부분적으로 폴리싱되는데, 특히 불꽃 폴리싱되는 것을 특징으로 하는 기판 열 처리 장치.
- 제 14 항에 있어서,상기 지지 엘리먼트들(8) 또는 상기 홀딩 엘리먼트들, 또는 상기 지지 엘리먼트들(8)과 상기 홀딩 엘리먼트들은 석영, 마그네슘 산화물, 지르코늄 산화물, 실리콘, 실리콘 질화물, 실리콘 카바이드, 알루미늄 산화물, 알루미늄 질화물, 붕소 질화물, 사파이어, SAPHAL 또는 세라믹과 같은 재료들 중 하나 또는 그러한 것들의 조합으로 제조되는 것을 특징으로 하는 기판 열 처리 장치.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10003639A DE10003639C2 (de) | 2000-01-28 | 2000-01-28 | Vorrichtung zum thermischen Behandeln von Substraten |
DE10003639.2 | 2000-01-28 |
Publications (2)
Publication Number | Publication Date |
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KR20020071971A KR20020071971A (ko) | 2002-09-13 |
KR100744215B1 true KR100744215B1 (ko) | 2007-07-30 |
Family
ID=7628988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027009638A KR100744215B1 (ko) | 2000-01-28 | 2001-01-19 | 기판 열처리 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6953338B2 (ko) |
EP (1) | EP1250710A1 (ko) |
JP (1) | JP4828761B2 (ko) |
KR (1) | KR100744215B1 (ko) |
DE (1) | DE10003639C2 (ko) |
TW (1) | TW488009B (ko) |
WO (1) | WO2001056064A1 (ko) |
Families Citing this family (26)
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WO2002005326A2 (en) * | 2000-07-10 | 2002-01-17 | Innovent, Inc. | Robotic end effector provided with wafer supporting pads elastically mounted |
WO2002095795A2 (de) * | 2001-05-18 | 2002-11-28 | Mattson Thermal Products Gmbh | Vorrichtung zur aufnahme von scheibenförmigen objekten |
DE10160521B4 (de) * | 2001-12-05 | 2004-09-30 | HSEB Heinze & Süllau Entwicklungsbüro Dresden GmbH | Positioniereinrichtungen für Halbleiterobjekte |
JP4411575B2 (ja) * | 2002-04-25 | 2010-02-10 | セイコーエプソン株式会社 | 電子装置の製造装置 |
JP4988202B2 (ja) * | 2002-12-20 | 2012-08-01 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の支持及び熱処理の方法とシステム |
EP1608011A4 (en) * | 2003-03-26 | 2010-07-21 | Shinetsu Handotai Kk | HEAT TREATMENT PURCHASE TOOL HOLDING TOOL AND HEAT TREATMENT DEVICE |
TWI476858B (zh) * | 2003-12-19 | 2015-03-11 | Mattson Tech Inc | 用於支撐工件及用於熱處理該工件的方法及系統 |
DE102004025150B4 (de) * | 2004-05-21 | 2019-05-09 | Mattson Technology, Inc. | Lagebestimmung eines Halbleitersubstrats auf einer Rotationsvorrichtung |
JP2006005177A (ja) * | 2004-06-17 | 2006-01-05 | Tokyo Electron Ltd | 熱処理装置 |
KR20070048649A (ko) * | 2004-09-04 | 2007-05-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 높이가 감소된 기판 캐리어 |
US7564536B2 (en) * | 2005-11-08 | 2009-07-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007061604A2 (en) * | 2005-11-21 | 2007-05-31 | Applied Materials, Inc. | Apparatus and methods for a substrate carrier having an inflatable seal |
US20070141280A1 (en) * | 2005-12-16 | 2007-06-21 | Applied Materials, Inc. | Substrate carrier having an interior lining |
JP4629574B2 (ja) * | 2005-12-27 | 2011-02-09 | 日本発條株式会社 | 基板支持装置と、その製造方法 |
US8347811B2 (en) * | 2006-10-05 | 2013-01-08 | Michael Bucci | System and method for supporting an object during application of surface coating |
WO2008058397A1 (en) * | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
KR100818842B1 (ko) * | 2006-12-27 | 2008-04-01 | 주식회사 실트론 | 웨이퍼의 열처리시 슬립을 방지할 수 있는 웨이퍼 지지 핀및 웨이퍼의 열처리 방법 |
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JP6369297B2 (ja) * | 2014-11-12 | 2018-08-08 | 株式会社Sumco | 半導体ウェーハの支持方法及びその支持装置 |
JP6554328B2 (ja) | 2015-05-29 | 2019-07-31 | 株式会社Screenホールディングス | 熱処理装置 |
JP6643029B2 (ja) * | 2015-10-06 | 2020-02-12 | 東洋炭素株式会社 | 単結晶炭化ケイ素基板の加熱処理容器及びエッチング方法 |
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2000
- 2000-01-28 DE DE10003639A patent/DE10003639C2/de not_active Expired - Lifetime
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2001
- 2001-01-19 EP EP01901179A patent/EP1250710A1/de not_active Withdrawn
- 2001-01-19 US US10/182,594 patent/US6953338B2/en not_active Expired - Lifetime
- 2001-01-19 WO PCT/EP2001/000607 patent/WO2001056064A1/de not_active Application Discontinuation
- 2001-01-19 KR KR1020027009638A patent/KR100744215B1/ko active IP Right Grant
- 2001-01-19 JP JP2001555121A patent/JP4828761B2/ja not_active Expired - Fee Related
- 2001-01-29 TW TW090101432A patent/TW488009B/zh not_active IP Right Cessation
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JPH11145025A (ja) | 1997-11-10 | 1999-05-28 | Tokyo Ohka Kogyo Co Ltd | ベーク装置 |
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DE10003639C2 (de) | 2003-06-18 |
TW488009B (en) | 2002-05-21 |
EP1250710A1 (de) | 2002-10-23 |
US20040029065A1 (en) | 2004-02-12 |
KR20020071971A (ko) | 2002-09-13 |
DE10003639A1 (de) | 2001-08-09 |
US6953338B2 (en) | 2005-10-11 |
JP4828761B2 (ja) | 2011-11-30 |
JP2003525524A (ja) | 2003-08-26 |
WO2001056064A1 (de) | 2001-08-02 |
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