Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67115—Apparatus for thermal treatment mainly by radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

• the present invention relates to a device for the thermal treatment of substrates, in particular semiconductor substrates, in a chamber in which the substrates are deposited on support elements.
• Such a device for treating substrates is known, for example, from DE-A-198 21 007, which goes back to the same applicant.
• the support elements for carrying semiconductor wafers are rigidly attached to a rotary plate which is rotated to homogenize the thermal treatment of a semiconductor wafer.
• FIG. 1 An alternative support structure for a device of the type mentioned at the outset is shown, for example, in FIG. 1.
• a wafer 1 is placed on conically shaped support pins 2, which are also called pins.
• the pins are rigidly attached with their holders 4 on a support frame 3.
• the pins have conically shaped contact tips in order to keep the contact areas between the support elements and the wafer small, and thus to minimize heat transfer from the wafer to the support element and the resultant cooling of the wafer in the area of the contact area.
• these contact tips have the disadvantage that they break off easily and thereby cause unwanted particles.
• the contact tips leave mechanical impressions in the wafer lying thereon, since the wafer material is relatively soft at high temperatures.
• wafers with relatively large diameters such as. B. 300mm wafers, which have a weight of 130g instead of 50g for wafers with a diameter of 200mm, increase the pressure forces between the contact tips and the wafer and thus the problem of mechanical impressions.
• the wafer is broken into predefined pieces, with a break line running through a location to be examined.
• a SIRD process scanned infrared depolarization
• a birefringence generated by elastic deformation is measured, which occurs with many transparent and isotropic substances due to deformation.
• sliplines in the crystal structure of the semiconductor wafer. Although this on the bottom, i.e. H. on the support side of the wafer, they can propagate to the top during thermal treatment of the wafer with a sufficiently high thermal load and damage or impair the structures applied to the top.
• sliplines can be made visible, for example, by structure etching.
• a substrate treatment device which has holding pins movable perpendicular to the substrate plane in order to position different areas at different distances from a heating plate.
• these holding pins With these holding pins, however, the problems of scratches already mentioned occur which occur when the substrate and pins move relative to one another as a result of thermal expansion of the substrate.
• the invention has for its object to provide a device of the type mentioned, in which the formation of scratch marks on the wafer surface is reduced.
• the support elements are movable essentially parallel to the substrate plane. Due to the movable configuration of the support elements, they can follow a movement of the wafer during expansion as a result of the thermal treatment. This prevents scratching of the support elements on the wafer surface. Instead of an elongated scratch mark, the support elements only create a punctiform impression. Furthermore, the height position of the substrates within the chamber is kept essentially constant by the movement directed essentially parallel to the substrate plane.
• the support elements are preferably movable radially with respect to a central axis of the substrate in order to be able to follow the aforementioned expansion of the wafer, which is directed radially outwards.
• the support elements are resiliently suspended in order to provide the required mobility of the support elements.
• the support elements are preferably each connected to a spring, in particular a flat spiral spring, via which both vertical and horizontal suspension can be reached.
• the vertical suspension is particularly useful when depositing the wafers in order to cushion the forces that occur at this time.
• the support elements can be pivoted perpendicular to their longitudinal axis in order to provide the required mobility of the support elements in a simple manner.
• the pivot axis is preferably spaced from the longitudinal axis of the support element, so that the support elements are inclined to a predetermined position in their rest position.
• the support elements are preferably inclined toward a central axis of the substrate, as a result of which they can follow an outward movement of the wafer over a greater distance.
• pin-shaped support elements with a large amount of play are stored in a sleeve-shaped receiving device.
• the large play guarantees the support elements the necessary freedom of movement to be able to follow the thermal expansion of the wafer.
• the sleeve is arranged tilted with respect to the wafer axis, so that the support pins are inclined towards the center of the wafer.
• the support elements are preferably attached to the free ends of movable support arms, the mobility of the support elements being provided via the support arms.
• the support arms are preferably movable parallel to the substrate plane in order to follow the radial expansion of the wafer during the thermal treatment and to provide a substantially fixed height position of the wafer within the chamber.
• the support elements are preferably received in a guide in order to guide the movement in a specific direction.
• the guide is preferably an elongated hole, which preferably extends radially to a central axis of the substrate.
• the support elements have a support flange on which the support elements can slide, for example, in order thus to enable movement of the support element.
• the support flange preferably has a curved support surface which provides for a pivotable mounting of the support element.
• the support element is preferably translucent and designed as an optical lens. This prevents a shadowing effect in a device in which the substrate is heated via a radiation field.
• the lens effect of the support flange allows the radiation to be focused on the contact point between the support element and the wafer, as a result of which the heat losses of the wafer described above are compensated for at this point. This leads to a more homogeneous temperature distribution across the wafer.
• a moveable, in particular tiltable, holding element is provided with at least three support arms and supporting elements attached to them. Due to the tiltable mounting of the holding element, small deviations in height of the supporting elements and or of the wafer can be compensated for.
• the support elements elements on the support arms are preferably movable, in particular pivotable, in order to follow a movement of the substrate, in particular a radially outward movement caused by the thermal treatment. At least three of these holding elements are preferably provided in order to provide a large number of support points and thus to reduce the compressive forces at the support points.
• the support elements are balls, which are preferably each guided in a path, in order to enable the balls to roll in the path when the substrate is moving and thus only ever touch one point on the substrate surface.
• the path is preferably inclined toward a central axis of the substrate in order to ensure that the balls roll again and again into a predetermined rest position after the substrate has been lifted off.
• these have a conically tapering foot which is pivotally received in a receptacle.
• the support elements preferably have substrate contact tips, as a result of which the contact area between the support element and the substrate is reduced.
• the substrate support tips are preferably formed by a cone which has a larger opening angle than a second cone adjoining it. This double cone ensures that the contact tip is less easily damaged, in particular breaks off.
• the first cone preferably has an opening angle between 50 ° and 130 ° and particularly preferably between 80 ° and 100 °.
• the opening angle of the second cone is preferably between 5 ° and 45 °, in particular between 5 ° and 25 °.
• the support elements are on a circular line with a radius of ⁇ to 4/5 and preferably of 2/3 of the substrate radius to avoid bending the substrate towards the center or outwards.
• the deflection is lowest in the above range, which reduces the formation of misalignments or sliplines.
• the support elements and / or their holding devices consist at least partially of a translucent material.
• the surfaces of the support elements and / or their holding devices are at least partially polished, in particular fire-polished, in order to ensure good passage of the heat radiation.
• the support elements and / or their holding devices are made from one or a combination of the following materials: quartz, magnesium oxide, zirconium oxide, silicon, silicon nitrite, silicon carbide, aluminum oxide, aluminum nitrite, boron nitride, sapphire, saphal or ceramic.
• the present invention is particularly suitable for rapid heating systems in which a semiconductor wafer is heated via a radiation field.
• FIG. 1 shows a schematic, perspective illustration of a substrate carrier according to the prior art
• Fl ig- 4 is a schematic, perspective view of a spring-loaded support pin;
• Fig. 5 is a schematic side view of an oscillating support pin according to the present invention.
• FIG. 6 shows a schematic side view of the support pin according to FIG. 5 with a viewing angle rotated by 90 °;
• Figure 7 is a top plan view of an alternative support structure in accordance with the present invention in which support pins are attached to swinging support arms; 8 is a detailed view of a support pin according to the present invention with a conical foot end;
• FIG. 9 is a schematic side view of an alternative support pin of the present invention.
• FIG. 10 shows a schematic side view of a further embodiment of a support pin according to the present invention.
• Fig. 11 is a guide plate for receiving and guiding a
• FIG. 12 shows a schematic sectional view through a further embodiment of a support pin according to the present
• FIG. 13 shows another alternative embodiment of a support pin according to the present invention.
• 14a and 14b are a schematic sectional view and a schematic plan view of a holding device for receiving
• 15 is a perspective view of the holding device according to
• Fig. 16 alternative embodiments of a holding device for support pins.
• the invention relates to a device for thermal treatment of substrates, in particular semiconductor wafers, in a chamber in which the wafers are placed on supporting elements.
• a device for thermal treatment of substrates, in particular semiconductor wafers, in a chamber in which the wafers are placed on supporting elements.
• Such a device is known, for example, from DE-A-19821007, which goes back to the same applicant, and is thus made the subject of the present invention in order to avoid repetitions.
• the chamber in which the semiconductor wafers are deposited on the support elements is surrounded by a heating device which consists of lamps or lamp banks located above and below the chamber.
• the support elements are movably mounted in order to follow a movement of the wafer, in particular in the event of an expansion as a result of the thermal treatment.
• Figure 4 shows a first embodiment of a support structure 6 for a support element 8 in the form of a support pin.
• the support pin 8 has a first end 10 with a support tip 11 for receiving a semiconductor wafer.
• An opposite end 13 of the support pin 8 is suitably attached to a flat coil spring 15.
• the spiral spring 15 is formed by cutting out a part 16 from a thin plate 17, such as a quartz plate. Due to the cutout 16 in the quartz plate 17, the flat spiral spring 15 is resilient both in the horizontal and in the vertical direction.
• FIGS. 5 and 6 show a second exemplary embodiment of the present invention for a movable suspension of a support pin 8.
• the support pin 8 has a first end 10 on which a support tip 11 is formed.
• the end 10 of the support pin 8 is designed as a double cone.
• the contact tip 11 is formed by a cone with an opening angle between 50 degrees and 130 degrees and preferably between 80 degrees and 100 degrees. This cone is followed by a second cone with an opening angle between 5 and 45 degrees and preferably between 5 and 25 degrees.
• the support tip shaped in this way is robust and reduces the risk of the tip breaking off.
• the support pin 8 has a longitudinal axis A.
• a pivot pin 20 with a longitudinal axis B is attached to one side of the support pin 8.
• the longitudinal axis B of the pivot pin 20 extends perpendicular to the longitudinal axis A of the support pin 8 and is laterally offset.
• the pivot pin 20 is received in a suitable holding device, such as a U-shaped holding device, so that the support pin 8 is pivoted.
• a suitable holding device such as a U-shaped holding device
• the pivot pin 20 is inclined in a rest position.
• the longitudinal axis B of the pivot pin 20 is arranged so that the support pin 8 is inclined toward a central axis of the wafer to be accommodated.
• FIGS. 3a and 3b show defects on the back of a semiconductor wafer which were generated during the thermal treatment by means of supporting pins which are mounted in an oscillating manner according to FIG.
• the oscillating support pin produces only a punctiform impression instead of an elongated scratch mark.
• the damage to the wafer surface is thus significantly reduced, which is due to the movement of the support pins during the thermal expansion of the wafer.
• FIG. 16 shows a further embodiment for the movable mounting of support elements.
• sleeve-shaped receiving devices for receiving supporting pins are arranged in a tilted manner.
• the support pins sit with great play in the sleeve, while their tilt angle is in the range of 1 ° -45 °, preferably between 1 ° -10 °.
• FIG. 7 shows an alternative exemplary embodiment for the movable suspension of support pins 8.
• the support pins 8 are attached to a rigid support frame 27 via freely swinging support arms 25.
• a total of three support pins 8 are attached to the support frame 7, which form an isosceles triangle on which one Wafer is placed centered.
• the freely oscillating support arms 25 follow a thermally induced movement, in particular an expansion movement, of the wafer.
• the support pins 8 can of course also be movably mounted on the support arms.
• a z. B. in combination with the free-swinging arms preferred embodiment for a movable mounting of the support pins 8 is shown in Figure 8.
• the end 13 remote from the support tip 11 is conical.
• the conical end 13 is in a receptacle 28 such. B. a sleeve and thereby pivotally held.
• the conical end could simply be received in a hole in the support arm 25.
• FIG. 9 shows a further alternative embodiment of a movable support pin 8 according to the present invention.
• the support pin 8 has a first end 10, which forms a support tip 11.
• the end 10 in turn has a double cone, the cone forming the support tip 11 having an opening angle of 90 degrees and the adjoining cone having an opening angle of 15 degrees.
• a support flange 30 adjoins the second cone, which provides for a considerable widening of the support pin 8 in the central region.
• the support flange 30 forms a support surface 31, which is described in more detail below with reference to FIG. 11.
• a lower end 13 of the support pin 8 adjoins the support flange 30.
• An undercut 33 is provided in the transition area between the support flange 30 and the lower end 13.
• the end part 13 has a conical end 34.
• the support pin 8 is made of a translucent material such as quartz in order to create a shading effect by the support pin 8 Reduce. In order to achieve a smooth surface and good transparency of the support pin 8, it is fire polished. Because of possible dimensional changes during this process, the undercut 33 and the conical foot 34 are provided. In the area of the support tip 11, the support pin 8 is not fire-polished, so that this area remains relatively opaque. This ensures that the tip does not let the radiant heat pass freely, and thus is itself heated during a thermal treatment. This reduces the temperature gradient between the contact tip 11 and the wafer, as a result of which a higher homogeneity of the wafer temperature is achieved.
• FIG. 10 shows a simplified illustration of an alternative embodiment of a support pin 8.
• the support pin 8 is essentially the same as the support pin shown in FIG. It has an upper end 10, a support flange 30, and a lower end 13. At the lower end part 13 a widening foot 36 is provided, the function of which will be described in more detail below with reference to FIG. 11.
• FIG. 11 shows a receiving plate 40 for receiving support pins 8 according to FIGS. 9 or 10.
• the receiving plate 40 has three elongated holes 42 which extend radially to a central axis C and which have an enlarged bore 44 at their radially outer ends.
• the elongated holes 42 are angularly evenly spaced.
• the elongated holes 42 are dimensioned such that they receive the lower end part 13 of the receiving pins 8 according to FIGS. 9 and 10 and can guide them in the radial direction.
• the widened bore 44 is dimensioned such that the widened foot part 36 of the support pin according to FIG. 10 fits through the bore 44.
• the bore 44 is not so large, however, that the support flange 30 of the support pin 8 according to FIGS. 9 and 10 also fits through it. Rather, the support surfaces 31 of the support flanges 30 come on the
• the support pins 8 being slidably mounted along the elongated holes 42 and on the receiving plate 40.
• the widened foot part 36 of the support pin 8 according to FIG. 10 is dimensioned such that it does not fit through the elongated holes. This prevents the support pin 8 from moving with the wafer when a wafer is lifted and coming out of the elongated hole 42.
• the support pin according to FIG. 9 has a correspondingly elongated foot part 13 for this purpose.
• the receiving plate 40 is made of a translucent material such as quartz in order not to impair the thermal treatment of the wafer.
• the translucent support flange 30 of the support pin 8 may be lenticular to form an optical lens.
• the lens shape is selected so that light rays from a heating field are focused at the contact point between the contact tip 11 and the wafer. As a result, heat losses of the wafer are compensated for at this point, and the temperature distribution over the wafer surface is homogenized.
• FIGS. 12 and 13 show alternative embodiments of support pins 8 with a support flange 30, in which the support flange 30 each has a curved support surface 31.
• the support flange 30 forms the lowest part of the support pin 8.
• the support flange 30 with its curved support surface 31 is received in a receptacle 50 which is adapted to the curved shape and which, like the support pin 8, is made of a transparent material.
• the support pin 8 is pivotably guided within the receptacle 50.
• an end part 13 follows below the support flange 30.
• the arcuate support surface 31 of the support flange 30 rests on a receiving ring 52 and thus enables a tilting movement of the support pin 8.
• the end part 13 is relatively large Game recorded in a receiving sleeve 54 to limit a tilting movement of the support pin 8.
• FIGS. 14 and 15 show a further alternative embodiment for a movable mounting of support pins 8.
• a holder 60 is provided with three support arms 62, each of which has an opening 64 on its free ends for receiving a support pin 8.
• the support arms 62 extend from a central, roof-shaped middle part 66, in which a downwardly facing blind bore 68 is formed.
• the blind bore 68 serves to receive a pin 70 with a rounded support end 71.
• the other end part 72 of the pin 70 is received in a receptacle 74 of a rigid support arm 75.
• the blind bore 68 and the pin 70, in particular the rounded support end 71, are dimensioned such that the holder 60 is arranged on the pin 70 in a tiltable manner.
• self-correction of the support pins 8 is achieved with small deviations in height.
• a total of three of these holders 60 are provided, so that a wafer is placed on a total of nine support pins 8 in contrast to previously three support pins 8. This results in lower compressive forces at the respective contact points, which reduces damage to the wafer.
• minimal shading of the wafer from the radiant heat is achieved, all elements preferably being made of a material transparent to the radiant heat, such as quartz.
• the individual support pins 8 can each be movably attached to the free ends of the support arms 62 in order in turn to be able to follow a movement of the wafer during the thermal treatment.
• balls can be used as support elements instead of support pins. Such balls preferably have a diameter between 0.5 mm and 5 mm. In the event of thermal expansion of the wafer, the balls roll on a base in accordance with the extent of the expansion and thus only ever touch one point on the wafer surface.
• B. gutters can be specified. These grooves are preferably inclined towards a central axis of the substrate in order to ensure that the balls always roll back into a certain starting position after a wafer has been removed.
• the channels are preferably arranged relative to one another like the elongated holes in FIG. 11.
• three support elements are provided for receiving a wafer, which are arranged at the corner points of an equilateral triangle and thus form a good three-point support.
• the center of the triangle coincides with the central axis of a wafer placed on it.
• Each support element is at a distance of 0.5 to 0.8 times the wafer radius (R) from the central axis of the wafer.
• the distance is preferably 2/3 of the wafer radius. If the elements are more than 0.8 R away from the central axis, large wafers, e.g. B. 300 mm in diameter, the wafer during the thermal treatment in the middle. If they are too close to the axis, the wafer edge bends down during the thermal treatment.
• the support elements are arranged in the above-mentioned area, and in particular at 2/3 of the wafer radius, the deflection of the wafer is the least, as a result of which the formation of misalignments or sliplines is minimized.
• a holder 60 with three support elements each can also be provided at the corner points of the triangle.
• Such materials are, for example, aluminum nitride, aluminum oxide, zirconium oxide, silicon carbide, boron nitride, sapphire, saphal (brand of Toshiba) or ceramic. Quartz, magnesium oxide, silicon and above all silicon nitride have proven to be particularly advantageous.

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
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• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

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• 2000
  • 2000-01-28 DE DE10003639A patent/DE10003639C2/de not_active Expired - Lifetime
• 2001
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  • 2001-01-19 EP EP01901179A patent/EP1250710A1/de not_active Withdrawn
  • 2001-01-19 US US10/182,594 patent/US6953338B2/en not_active Expired - Lifetime
  • 2001-01-19 KR KR1020027009638A patent/KR100744215B1/ko active IP Right Grant
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